Modeling hot-electron gate current in Si MOSFET's using a coupled drift-diffusion and Monte Carlo method

1992 ◽  
Vol 39 (11) ◽  
pp. 2562-2568 ◽  
Author(s):  
Chimoon Huang ◽  
Tahui Wang ◽  
C.N. Chen ◽  
M.C. Chang ◽  
J. Fu
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Method ◽  
Hot Electron ◽  
Drift Diffusion ◽  
Gate Current

MOSFET GATE CURRENT MODELLING USING MONTE-CARLO METHOD

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-791-C4-794
Author(s):  
J. VOVES ◽  
J. VESELY
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Method ◽  
Gate Current ◽  
Current Modelling

scholarly journals Simulation of Si-MOSFETs with the Mutation Operator Monte Carlo Method

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 343-347 ◽  
Author(s):  
Jürgen Jakumeit ◽  
Amanda Duncan ◽  
Umberto Ravaioli ◽  
Karl Hess
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Method ◽  
High Energy ◽  
Stationary Condition ◽  
Good Resolution ◽  
Mutation Operator ◽  
Hot Electron ◽  
High Energy Tail ◽  
Electron Distributions ◽  
Dimensional Simulation

The Mutation Operator Monte Carlo method (MOMC) is a new type of Monte Carlo technique for the study of hot electron related effects in semiconductor devices. The MOMC calculates energy distributions of electrons by a physical mutation of the distribution towards a stationary condition. In this work we compare results of an one dimensional simulation of an 800nm Si-MOSFET with full band Monte Carlo calculations and measurement results. Starting from the potential distribution resulting from a drift diffusion simulation, the MOMC calculates electron distributions which are comparable to FBMC-results within minutes on a modern workstation. From these distributions, substrate and gate currents close to experimental results can be calculated. These results show that the MOMC is useful as a post-processor for the investigation of hot electron related problems in Si-MOSFETs. Beside the computational efficiency, a further advantage of the MOMC compared to standard MC techniques is the good resolution of the high energy tail of the distribution without the necessity of any statistical enhancement.

Monte-Carlo modeling of hot electron gate current in MOSFETs

1986 ◽  
Author(s):  
B. Ricco ◽  
E. Sangiorgi ◽  
F. Venturi ◽  
P. Lugli
Keyword(s):  
Monte Carlo ◽  
Hot Electron ◽  
Monte Carlo Modeling ◽  
Gate Current

Comparison between the Monte Carlo method and the drift-diffusion approximation in quantum-well laser simulation

1998 ◽  
Vol 84 (9) ◽  
pp. 4673-4676 ◽  
Author(s):  
A. D. Güçlü ◽  
R. Maciejko ◽  
A. Champagne ◽  
M. Abou-Khalil ◽  
T. Makino
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Method ◽  
Quantum Well ◽  
Diffusion Approximation ◽  
Drift Diffusion ◽  
Quantum Well Laser ◽  
The Monte Carlo Method ◽  
Laser Simulation

Hydrodynamic hot-electron transport simulation based on the Monte Carlo method

1989 ◽  
Vol 32 (12) ◽  
pp. 1347-1351 ◽  
Author(s):  
D.L. Woolard ◽  
J-L. Pelouard ◽  
R.J. Trew ◽  
M.A. Littlejohn ◽  
C.T. Kelley
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
Monte Carlo Method ◽  
Hot Electron ◽  
Transport Simulation ◽  
The Monte Carlo Method ◽  
Simulation Based ◽  
Hot Electron Transport

Coupled Monte Carlo-drift diffusion analysis of hot-electron effects in MOSFETs

1989 ◽  
Vol 36 (5) ◽  
pp. 930-937 ◽  
Author(s):  
J.M. Higman ◽  
K. Hess ◽  
C.G. Hwang ◽  
R.W. Dutton
Keyword(s):  
Monte Carlo ◽  
Hot Electron ◽  
Drift Diffusion ◽  
Diffusion Analysis ◽  
Electron Effects
Sign in / Sign up

Export Citation Format

Share Document