Dependence of thin film transistor characteristics on the deposition conditions of silicon nitride and amorphous silicon

1994 ◽  
Vol 41 (4) ◽  
pp. 499-503 ◽  
Author(s):  
H. Miyashita ◽  
Y. Watabe
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Thin Film Transistor ◽  
Deposition Conditions

Single-grain thin-film transistor using Ni-mediated crystallization of amorphous silicon with a silicon nitride cap layer

2003 ◽  
Vol 83 (24) ◽  
pp. 5068-5070 ◽  
Author(s):  
Jung Chul Kim ◽  
Jong Hyun Choi ◽  
Seung Soo Kim ◽  
Kyu Man Kim ◽  
Jin Jang
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Thin Film Transistor ◽  
Cap Layer ◽  
Single Grain

Amorphous-silicon thin film transistor with two-step exposure process

2000 ◽  
Author(s):  
Pi-Fu Chen ◽  
Jr-Hong Chen ◽  
Dou-I Chen ◽  
HsixgJu Sung ◽  
June-Wei Hwang ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistor ◽  
Silicon Thin Film ◽  
Exposure Process
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