Measurement circuits for silicon-diode and solar-cell lifetime and surface recombination velocity by electrical short-circuit current decay

1988 ◽  
Vol 35 (1) ◽  
pp. 85-88 ◽  
Author(s):  
A. Zondervan ◽  
L.A. Verhoef ◽  
F.A. Lindholm
Keyword(s):  
Solar Cell ◽  
Short Circuit ◽  
Surface Recombination ◽  
Short Circuit Current ◽  
Surface Recombination Velocity ◽  
Silicon Diode ◽  
Current Decay ◽  
Recombination Velocity

scholarly journals Analysis of Back Surface Field (BSF) Performance in P-Type And N-Type Monocrystalline Silicon Wafer

2018 ◽  
Vol 43 ◽  
pp. 01006 ◽  
Author(s):  
Ferdiansjah ◽  
Faridah ◽  
Kelvian Tirtakusuma Mularso
Keyword(s):  
Solar Cell ◽  
Doping Level ◽  
Short Circuit ◽  
Surface Recombination ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Surface Recombination Velocity ◽  
Back Surface ◽  
Solar Cell Performance ◽  
P Type

Back Surface Field (BSF) has been used as one of means to enhance solar cell performance by reducing surface recombination velocity (SRV). One of methods to produce BSF is by introducing highly doped layer on rear surface of the wafer. Depending on the type of the dopant in wafer, the BSF layer could be either p+ or n+. This research aims to compare the performance of BSF layer both in p-type and n-type wafer in order to understand the effect of BSF on both wafer types. Monociystalline silicon wafer with thickness of 300 μm. area of 1 cm2, bulk doping level NB = 1.5×1016/cm3 both for p-type wafer and n-type wafer are used. Both wafer then converted into solar cell by adding emitter layer with concentration NE =7.5×1018/cm3 both for p-type wafer and n-type wafer. Doping profile that is used for emitter layer is following complementary error function (erfc) distribution profile. BSF concentration is varied from 1×1017/cm3 to 1×1020/cm3 for each of the cell. Solar cell performance is tested under standard condition, with AM1.5G spectrum at 1000 W/m2. Its output is measured based on its open circuit voltage (Voc). short circuit current density (JSC), efficiency (η). and fill factor (FF). The result shows that the value of VOC is relatively constant along the range of BSF concentration, which is 0.694 V – 0.702 V. The same pattern is also observed in FF value which is between 0.828 – 0.831. On the other hand, value of JSC and efficiency will drop against the increase of BSF concentration. Highest JSC which is 0.033 A/cm2 and highest efficiency which is 18.6% is achieved when BSF concentration is slightly higher than bulk doping level. The best efficiency can be produced when BSF concentration is around 1×1017cm-3.. This result confirms that surface recombination velocity has been reduced due to the increase in cell’s short circuit current density and its efficiency. In general both p-type and n-type wafer will produce higher efficiency when BSF is applied. However, the increase is larger in p-type wafer than in n-type wafer. Better performance for solar cell is achieved when BSF concentration is slightly higher that bulk doping level because at very high BSF concentration the cell’s efficiency will be decreased.

scholarly journals Enhanced Performance of Nanotextured Silicon Solar Cells with Excellent Light-Trapping Properties

Photonics ◽  
2021 ◽  
Vol 8 (7) ◽  
pp. 272
Author(s):  
Bingfei Dou ◽  
Rui Jia ◽  
Zhao Xing ◽  
Xiaojiang Yao ◽  
Dongping Xiao ◽  
...  
Keyword(s):  
Solar Cells ◽  
Light Trapping ◽  
Short Circuit ◽  
Surface Recombination ◽  
Atomic Layer ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Surface Recombination Velocity ◽  
Electrode Contact ◽  
Recombination Velocity

Light-trapping nanostructures have been widely used for improving solar cells’ performance, but the higher surface recombination and poor electrode contact introduced need to be addressed. In this work, silicon nanostructures were synthesized via silver-catalyzed etching to texturize solar cells. Atomic-layer-deposited Al2O3 passivated the nanotextured cells. A surface recombination velocity of 126 cm/s was obtained, much lower than the 228 cm/s of the SiNX-passivated one. Additionally, the open-circuit voltage (VOC) of the nanotextured cells improved significantly from 582 to 610 mV, as did the short-circuit current (JSC) from 25.5 to 31 mA/cm2. Furthermore, the electrode contact property was enhanced by light-induced plating. A best efficiency of 13.3% for nano-textured cells was obtained, which is higher than the planar cell’s 12%.

scholarly journals Numerical Simulation Analysis of Ag Crystallite Effects on Interface of Front Metal and Silicon in the PERC Solar Cell

Energies ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 592
Author(s):  
Myeong Sang Jeong ◽  
Yonghwan Lee ◽  
Ka-Hyun Kim ◽  
Sungjin Choi ◽  
Min Gu Kang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Surface Recombination ◽  
Open Circuit ◽  
Surface Recombination Velocity ◽  
Metal Interface ◽  
Ag Crystallites ◽  
Recombination Velocity

In the fabrication of crystalline silicon solar cells, the contact properties between the front metal electrode and silicon are one of the most important parameters for achieving high-efficiency, as it is an integral element in the formation of solar cell electrodes. This entails an increase in the surface recombination velocity and a drop in the open-circuit voltage of the solar cell; hence, controlling the recombination velocity at the metal-silicon interface becomes a critical factor in the process. In this study, the distribution of Ag crystallites formed on the silicon-metal interface, the surface recombination velocity in the silicon-metal interface and the resulting changes in the performance of the Passivated Emitter and Rear Contact (PERC) solar cells were analyzed by controlling the firing temperature. The Ag crystallite distribution gradually increased corresponding to a firing temperature increase from 850 ∘C to 950 ∘C. The surface recombination velocity at the silicon-metal interface increased from 353 to 599 cm/s and the open-circuit voltage of the PERC solar cell decreased from 659.7 to 647 mV. Technology Computer-Aided Design (TCAD) simulation was used for detailed analysis on the effect of the surface recombination velocity at the silicon-metal interface on the PERC solar cell performance. Simulations showed that the increase in the distribution of Ag crystallites and surface recombination velocity at the silicon-metal interface played an important role in the decrease of open-circuit voltage of the PERC solar cell at temperatures of 850–900 ∘C, whereas the damage caused by the emitter over fire was determined as the main cause of the voltage drop at 950 ∘C. These results are expected to serve as a steppingstone for further research on improvement in the silicon-metal interface properties of silicon-based solar cells and investigation on high-efficiency solar cells.

Numerical Simulation of Single Junction InGaN Solar Cell by SCAPS

2019 ◽  
Vol 821 ◽  
pp. 407-413 ◽  
Author(s):  
Mohamed Orabi Moustafa ◽  
Tariq Alzoubi
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Collection Efficiency ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Surface Recombination ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Bandgap Energy ◽  
Single Junction

The performance of the InGaN single-junction thin film solar cells has been analyzed numerically employing the Solar Cell Capacitance Simulator (SCAPS-1D). The electrical properties and the photovoltaic performance of the InGaN solar cells were studied by changing the doping concentrations and the bandgap energy along with each layer, i.e. n-and p-InGaN layers. The results reveal an optimum efficiency of the InGaN solar cell of ~ 15.32 % at a band gap value of 1.32 eV. It has been observed that lowering the doping concentration NA leads to an improvement of the short circuit current density (Jsc) (34 mA/cm2 at NA of 1016 cm−3). This might be attributed to the increase of the carrier mobility and hence an enhancement in the minority carrier diffusion length leading to a better collection efficiency. Additionally, the results show that increasing the front layer thickness of the InGaN leads to an increase in the Jsc and to the conversion efficiency (η). This has been referred to the increase in the photogenerated current, as well as to the less surface recombination rate.

The Effect of Al-BSF on Seff and Rb in Industrialized Mono-Silicon Solar Cells

2012 ◽  
Vol 472-475 ◽  
pp. 1846-1850
Author(s):  
Shan Shan Dai ◽  
Gao Jie Zhang ◽  
Xiang Dong Luo ◽  
Jing Xiao Wang ◽  
Wen Jun Chen ◽  
...  
Keyword(s):  
Solar Cells ◽  
Spectral Response ◽  
Short Circuit ◽  
Rear Surface ◽  
Surface Recombination ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Surface Recombination Velocity ◽  
Silicon Solar Cells ◽  
Back Surface

In this work, the effect of aluminum back surface field formed by screen printed various amount of Al paste on the effective rear surface recombination velocity (Seff) and the internal rear reflectance coeffeicient (Rb) of commercial mono-silicon solar cells was investigated. We demonstrated the effect of Seffand Rbon the performance of Al-BSF solar cells by simulating them with PC1D. The simulated results showed that the lower Seffcould get higher open circuit voltage (Voc), at the same time, the larger Rbcould get higher short-circuit current (Isc). Experimentally, we investigated the Seffand Rbthrough depositing Al paste with various amount (3.7, 5, 6, and 8 mg/cm2) for fabricating Al-BSF mono-silicon solar cells. Four group cells were characterized by light I-V, spectral response, hemispherical reflectance and scanning electron microscope (SEM) measurements. It was found that, a minimum Seffof 350 cm/s was gotten from the cells with Al paste of 8 mg/cm2, which was extracted by matching quantum efficiency (QE) from 800 nm to 1200 nm with PC1D, and a maximum Rbof 53.5% was obtained from Al paste of 5 mg/cm2by calculating at 1105 nm with PC1D. When the amount of Al paste was higher than 5mg/cm2, there were less Seffand lower Rb. On the other hand, when Al amount was 3.7mg/cm2, it was too little to form a closed BSF. Based on the SEM graphs and simulations with PC1D, a simple explaination was proposed for the experimental results.

scholarly journals Back Surface Recombination Velocity Modeling in White Biased Silicon Solar Cell under Steady State

2018 ◽  
Vol 09 (02) ◽  
pp. 189-201
Author(s):  
Ousmane Diasse ◽  
Amadou Diao ◽  
Mamadou Wade ◽  
Marcel Sitor Diouf ◽  
Ibrahima Diatta ◽  
...  
Keyword(s):  
Steady State ◽  
Solar Cell ◽  
Silicon Solar Cell ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Back Surface ◽  
Velocity Modeling ◽  
Recombination Velocity

Semiconductor Materials and Modelling for Solar Cells

2021 ◽  
Author(s):  
Z. Pezeshki ◽  
A. Zekry
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Surface Recombination ◽  
Semiconductor Materials ◽  
Surface Recombination Velocity ◽  
Solar Cell Efficiency ◽  
Uv Sensitivity ◽  
Cell Efficiency ◽  
Comprehensive Survey ◽  
Recombination Velocity

The book presents a comprehensive survey about advanced solar cell technologies. Focus is placed on semiconductor materials, solar cell efficiency, improvements in surface recombination velocity, charge density, high ultraviolet (UV) sensitivity, modeling of solar cells etc. The book references 281 original resources with their direct web links for in-depth reading.

Sign in / Sign up

Export Citation Format

Share Document