Modeling of minority-carrier surface recombination velocity at low-high junction of an n/sup +/-p-p/sup +/ silicon diode

1991 ◽  
Vol 38 (2) ◽  
pp. 337-343 ◽  
Author(s):  
S.N. Singh ◽  
P.K. Singh
Keyword(s):  
Minority Carrier ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Silicon Diode ◽  
Recombination Velocity

Optimization of the Specific On-Resistance of 4H-SiC BJTs

2006 ◽  
Vol 527-529 ◽  
pp. 1429-1432 ◽  
Author(s):  
S. Balachandran ◽  
T. Paul Chow ◽  
Anant K. Agarwal
Keyword(s):  
High Voltage ◽  
Minority Carrier ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Bipolar Junction Transistors ◽  
Carrier Lifetimes ◽  
Minority Carrier Lifetimes ◽  
Recombination Velocity ◽  
The Impact

We evaluate the performance capabilities and limitations of high voltage 4H-SiC based Bipolar Junction Transistors (BJTs). Experimental forward characteristics of a 4kV BJT are studied and simulations are employed to determine the factors behind the higher than expected specific onresistance (Ron,sp) for the device. The impact of material (minority carrier lifetimes), processing (surface recombination velocity) and design (p contact spacing from the emitter mesa) parameters on the forward active performance of this device are discussed and ways to lower Ron,sp, below the unipolar level, and increase the gain (β) are examined.

Minority Carrier Annihilation at Crystalline Silicon Interface in Metal Oxide Semiconductor Structure

2014 ◽  
Vol 1666 ◽  
Author(s):  
Jun Furukawa ◽  
Satoshi Shigeno ◽  
Shinya Yoshidomi ◽  
Tomohito Node ◽  
Masahiko Hasumi ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Minority Carrier ◽  
Crystalline Silicon ◽  
Surface Recombination ◽  
Depletion Region ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Surface Recombination Velocity ◽  
Light Illumination ◽  
Recombination Velocity

ABSTRACTWe report photo induced minority carrier annihilation at the silicon surface in a metal–oxide–semiconductor (MOS) structure using 9.35 GHz microwave transmittance measurement. 7 Ωcm n-type 500-μm-thick crystalline silicon substrate coated with 100-nm-thick thermally grown SiO2 layers was used. 0.2-cm-long Al electrode bars were formed at the top and rear surfaces. 635 nm light illumination onto the top surface caused photo induced carriers to be in one side of the silicon region of the Al electrode. Microwave transmittance system detected photo induced carriers diffused from the light illuminated region via the MOS structured region. When the bias voltage was applied at +2.0 and -2.2 V to the electrode at the top surface, the surface recombination velocity increased from 44 (initial) to 83 and 86 cm/s, respectively because of depletion region formation at rear and top surface respectively. Those voltage applications caused change in the distribution of photo induced carriers in a 0.6-cm-wide region including light illuminated, MOS structured, microwave irradiated regions.

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