A novel and effective PECVD SiO/sub 2//SiN antireflection coating for Si solar cells

1993 ◽  
Vol 40 (6) ◽  
pp. 1161-1165 ◽  
Author(s):  
Z. Chen ◽  
P. Sana ◽  
J. Salami ◽  
A. Rohatgi
Keyword(s):  
Solar Cells ◽  
Antireflection Coating ◽  
Si Solar Cells

scholarly journals Nanostructured multilayer graded-index antireflection coating for Si solar cells with broadband and omnidirectional characteristics

2008 ◽  
Vol 93 (25) ◽  
pp. 251108 ◽  
Author(s):  
Sameer Chhajed ◽  
Martin F. Schubert ◽  
Jong Kyu Kim ◽  
E. Fred Schubert
Keyword(s):  
Solar Cells ◽  
Antireflection Coating ◽  
Graded Index ◽  
Si Solar Cells

scholarly journals Improved multicrystalline Si solar cells by light trapping from Al nanoparticle enhanced antireflection coating

2013 ◽  
Vol 3 (4) ◽  
pp. 489 ◽  
Author(s):  
Yinan Zhang ◽  
Xi Chen ◽  
Zi Ouyang ◽  
Hongyan Lu ◽  
Baohua Jia ◽  
...  
Keyword(s):  
Solar Cells ◽  
Light Trapping ◽  
Antireflection Coating ◽  
Si Solar Cells

Microstructure Characterization of Amorphous Silicon-Nitride Films by Effusion Measurements

2006 ◽  
Vol 910 ◽  
Author(s):  
Wolfhard Beyer ◽  
H.F.W. Dekkers
Keyword(s):  
Solar Cells ◽  
Atomic Hydrogen ◽  
Antireflection Coating ◽  
Compact Structure ◽  
Silicon Nitride Films ◽  
Si Solar Cells ◽  
Defect Passivation ◽  
Annealing Effects ◽  
Substrate Temperatures

AbstractThe microstructure of a-Si:N:H films, which are applied as antireflection coating and for defect passivation in multicrystalline silicon (mc-Si) solar cells, was studied by gas effusion experiments. The results show for as-deposited material of low substrate temperatures (TS = 200 – 300°C) a predominant diffusion of molecular hydrogen for temperatures up to 800°C in agreement with the presence of interconnected openings (voids). At higher substrate temperatures, the material has a more compact structure and atomic hydrogen is the dominant diffusing species in the accessible temperature range. Annealing effects were also studied. The results are consistent with the concept that atomic hydrogen released from the a-Si:N:H coating serves for defect passivation in μc-Si solar cells.

Argon plasma treatment of silicon nitride (SiN) for improved antireflection coating on c-Si solar cells

2017 ◽  
Vol 215 ◽  
pp. 29-36 ◽  
Author(s):  
Hemanta Ghosh ◽  
Suchismita Mitra ◽  
Hiranmay Saha ◽  
Swapan Kumar Datta ◽  
Chandan Banerjee
Keyword(s):  
Solar Cells ◽  
Silicon Nitride ◽  
Plasma Treatment ◽  
Argon Plasma ◽  
Antireflection Coating ◽  
Si Solar Cells

scholarly journals Multi-crystalline Si solar cells with very fast deposited (180 nm/min) passivating hot-wire CVD silicon nitride as antireflection coating

2007 ◽  
Vol 15 (7) ◽  
pp. 563-573 ◽  
Author(s):  
V. Verlaan ◽  
C. H. M. van der Werf ◽  
Z. S. Houweling ◽  
I. G. Romijn ◽  
A. W. Weeber ◽  
...  
Keyword(s):  
Solar Cells ◽  
Silicon Nitride ◽  
Antireflection Coating ◽  
Hot Wire ◽  
Si Solar Cells

INDUSTRIALIZATION OF a-Si SOLAR CELLS

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-1155-C4-1164 ◽  
Author(s):  
Y. Kuwano ◽  
M. Ohnishi
Keyword(s):  
Solar Cells ◽  
Si Solar Cells

Studies on Backside Al-Contact Formation in Si Solar Cells: Fundamental Mechanisms

2008 ◽  
Author(s):  
Vishal Mehta ◽  
Bhushan Sopori ◽  
Przemyslaw Rupnowski ◽  
Helio Moutinho ◽  
Aziz Shaikh ◽  
...  
Keyword(s):  
Solar Cells ◽  
Contact Formation ◽  
Si Solar Cells
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