scholarly journals Multi-crystalline Si solar cells with very fast deposited (180 nm/min) passivating hot-wire CVD silicon nitride as antireflection coating

2007 ◽  
Vol 15 (7) ◽  
pp. 563-573 ◽  
Author(s):  
V. Verlaan ◽  
C. H. M. van der Werf ◽  
Z. S. Houweling ◽  
I. G. Romijn ◽  
A. W. Weeber ◽  
...  
Keyword(s):  
Solar Cells ◽  
Silicon Nitride ◽  
Antireflection Coating ◽  
Hot Wire ◽  
Si Solar Cells

Argon plasma treatment of silicon nitride (SiN) for improved antireflection coating on c-Si solar cells

2017 ◽  
Vol 215 ◽  
pp. 29-36 ◽  
Author(s):  
Hemanta Ghosh ◽  
Suchismita Mitra ◽  
Hiranmay Saha ◽  
Swapan Kumar Datta ◽  
Chandan Banerjee
Keyword(s):  
Solar Cells ◽  
Silicon Nitride ◽  
Plasma Treatment ◽  
Argon Plasma ◽  
Antireflection Coating ◽  
Si Solar Cells

scholarly journals Nanostructured multilayer graded-index antireflection coating for Si solar cells with broadband and omnidirectional characteristics

2008 ◽  
Vol 93 (25) ◽  
pp. 251108 ◽  
Author(s):  
Sameer Chhajed ◽  
Martin F. Schubert ◽  
Jong Kyu Kim ◽  
E. Fred Schubert
Keyword(s):  
Solar Cells ◽  
Antireflection Coating ◽  
Graded Index ◽  
Si Solar Cells

scholarly journals Improved multicrystalline Si solar cells by light trapping from Al nanoparticle enhanced antireflection coating

2013 ◽  
Vol 3 (4) ◽  
pp. 489 ◽  
Author(s):  
Yinan Zhang ◽  
Xi Chen ◽  
Zi Ouyang ◽  
Hongyan Lu ◽  
Baohua Jia ◽  
...  
Keyword(s):  
Solar Cells ◽  
Light Trapping ◽  
Antireflection Coating ◽  
Si Solar Cells

Antireflection Coating Design for Triple-Junction III–V/Ge High-Efficiency Solar Cells Using Low Absorption PECVD Silicon Nitride

2012 ◽  
Vol 2 (3) ◽  
pp. 393-397 ◽  
Author(s):  
Ram Homier ◽  
Abdelatif Jaouad ◽  
Artur Turala ◽  
Christopher E. Valdivia ◽  
Denis Masson ◽  
...  
Keyword(s):  
Solar Cells ◽  
Silicon Nitride ◽  
Triple Junction ◽  
High Efficiency ◽  
Antireflection Coating ◽  
High Efficiency Solar Cells ◽  
Coating Design

scholarly journals Investigation of Low-Cost Surface Processing Techniques for Large-Size Multicrystalline Silicon Solar Cells

2010 ◽  
Vol 2010 ◽  
pp. 1-6 ◽  
Author(s):  
Yuang-Tung Cheng ◽  
Jyh-Jier Ho ◽  
William J. Lee ◽  
Song-Yeu Tsai ◽  
Yung-An Lu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Silicon Nitride ◽  
Conversion Efficiency ◽  
High Efficiency ◽  
Short Circuit ◽  
Open Circuit ◽  
Multicrystalline Silicon ◽  
Double Layers ◽  
Large Size ◽  
Si Solar Cells

The subject of the present work is to develop a simple and effective method of enhancing conversion efficiency in large-size solar cells using multicrystalline silicon (mc-Si) wafer. In this work, industrial-type mc-Si solar cells with area of125×125 mm2were acid etched to produce simultaneouslyPOCl3emitters and silicon nitride deposition by plasma-enhanced chemical vapor deposited (PECVD). The study of surface morphology and reflectivity of different mc-Si etched surfaces has also been discussed in this research. Using our optimal acid etching solution ratio, we are able to fabricate mc-Si solar cells of 16.34% conversion efficiency with double layers silicon nitride (Si3N4) coating. From our experiment, we find that depositing double layers silicon nitride coating on mc-Si solar cells can get the optimal performance parameters. Open circuit (Voc) is 616 mV, short circuit current (Jsc) is 34.1 mA/cm2, and minority carrier diffusion length is 474.16 μm. The isotropic texturing and silicon nitride layers coating approach contribute to lowering cost and achieving high efficiency in mass production.

Microstructure Characterization of Amorphous Silicon-Nitride Films by Effusion Measurements

2006 ◽  
Vol 910 ◽  
Author(s):  
Wolfhard Beyer ◽  
H.F.W. Dekkers
Keyword(s):  
Solar Cells ◽  
Atomic Hydrogen ◽  
Antireflection Coating ◽  
Compact Structure ◽  
Silicon Nitride Films ◽  
Si Solar Cells ◽  
Defect Passivation ◽  
Annealing Effects ◽  
Substrate Temperatures

AbstractThe microstructure of a-Si:N:H films, which are applied as antireflection coating and for defect passivation in multicrystalline silicon (mc-Si) solar cells, was studied by gas effusion experiments. The results show for as-deposited material of low substrate temperatures (TS = 200 – 300°C) a predominant diffusion of molecular hydrogen for temperatures up to 800°C in agreement with the presence of interconnected openings (voids). At higher substrate temperatures, the material has a more compact structure and atomic hydrogen is the dominant diffusing species in the accessible temperature range. Annealing effects were also studied. The results are consistent with the concept that atomic hydrogen released from the a-Si:N:H coating serves for defect passivation in μc-Si solar cells.

Properties of High Quality p-Type Micro-Crystalline-Si Prepared by Cat-CVD

2003 ◽  
Vol 762 ◽  
Author(s):  
Hideki Matsumura ◽  
Kouichi Katouno ◽  
Masaya Itoh ◽  
Atsushi Masuda
Keyword(s):  
Solar Cells ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Window Layer ◽  
Hot Wire ◽  
Structural And Optical Properties ◽  
High Quality ◽  
Suitable Material ◽  
Si Solar Cells ◽  
P Type

AbstractProperties of p-type μc-Si prepared by Cat-CVD (Catalytic Chemical Vapor Deposition), often called Hot-Wire CVD, are studied for possible application to window layer of a-Si solar cells. Electrical, structural and optical properties are investigated. It is concluded that Cat-CVD p-type μc-Si is a suitable material as a window layer for Cat-CVD a-Si solar cells.

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