Extraction of electronic transport parameters in submicrometer gate-length MODFET's

1991 ◽  
Vol 38 (8) ◽  
pp. 1719-1729 ◽  
Author(s):  
S.-T. Fu ◽  
M.B. Das
Keyword(s):  
Electronic Transport ◽  
Gate Length ◽  
Transport Parameters

Mixed Ionic-Electronic Conduction in Pyrochlore Oxides

1990 ◽  
Vol 210 ◽  
Author(s):  
M. Spears ◽  
S. Kramer ◽  
P.K. Moon ◽  
H.L. Tuller
Keyword(s):  
Electronic Transport ◽  
Ionic Conduction ◽  
Structural Disorder ◽  
Electronic Conduction ◽  
Transport Parameters ◽  
Oxygen Ion Conductivity ◽  
Chemical Models ◽  
Oxygen Ion ◽  
Electrochemical Devices ◽  
Low X

AbstractThe transport properties of the pyrochlore solid solution Gd2(ZrxTil-x)2O7 are investigated to clarify the relationships between composition, structural disorder and ionic and electronic transport. The oxygen ion conductivity has been found to increase sharply with increasing Zr content, x, due to enhanced structural disorder, leading to intrinsic ionic conduction at large values ofx. In contrast, the n—type conductivity predominant at low x, decreases sharply above x=0.2. Defect chemical models are presented to account for the simultaneous contributions of both intrinsic and dopant induced disorder. These models are applied to the σ(T, PO2, dopant) data to extract key thermodynamic and transport parameters. The significance of these parameters and the potential application of these materials in electrochemical devices are discussed.

Field and temperature-dependent electronic transport parameters of amorphous and polycrystalline GaSe thin films

2003 ◽  
Vol 337 (1-4) ◽  
pp. 404-412 ◽  
Author(s):  
M Thamilselvan ◽  
K Premnazeer ◽  
D Mangalaraj ◽  
Sa.K Narayandass
Keyword(s):  
Thin Films ◽  
Electronic Transport ◽  
Transport Parameters ◽  
Temperature Dependent

Depth Profiling of Electronic Transport Parameters in n-on-p Boron-Ion-Implanted Vacancy-Doped HgCdTe

2013 ◽  
Vol 42 (11) ◽  
pp. 3108-3113 ◽  
Author(s):  
G. A. Umana-Membreno ◽  
H. Kala ◽  
J. Antoszewski ◽  
Z. H. Ye ◽  
W. D. Hu ◽  
...  
Keyword(s):  
Electronic Transport ◽  
Depth Profiling ◽  
Transport Parameters ◽  
Ion Implanted

scholarly journals Effective Simulations of Electronic Transport in 2D Structures Based on Semiconductor Superlattice Infinite Model

Electronics ◽  
2020 ◽  
Vol 9 (11) ◽  
pp. 1845
Author(s):  
Mariusz Mączka
Keyword(s):  
Electronic Transport ◽  
Type I ◽  
Transport Parameters ◽  
Semiconductor Superlattices ◽  
Accurate Analysis ◽  
Semiconductor Superlattice ◽  
Quantum Phenomena ◽  
The Green Function ◽  
Infinite Model ◽  
Method Approach

Effective simulations of semiconductor superlattices are presented in the paper. The simulations have been based on the Wannier function method approach where a new algorithm, inspired by Büttiker probes, has been incorporated into determining the Green function procedure. The program is of a modular structure, and its modules can either work independently, or interact with each other following a predefined algorithm. Such structuring not only accelerates simulations and makes the transport parameters possible to initially assess, but also enables accurate analysis of quantum phenomena occurring in semiconductor superlattices. In this paper, the capabilities of type I superlattice simulator, developed earlier, are presented, with particular emphasis on the new block where the Fermi levels are determined by applying Büttiker probes. The algorithms and methods used in the program are briefly described in the further chapters of our work, where we also provide graphics illustrating the results obtained for the simulated structures known from the literature.

scholarly journals Electronic transport parameters of indium zinc oxide thin films after Al2O3/HfO2 top-dielectric formation annealing

2017 ◽  
Vol 178 ◽  
pp. 164-167 ◽  
Author(s):  
G.A. Umana-Membreno ◽  
Y. Song ◽  
N.D. Akhavan ◽  
J. Antoszewski ◽  
D.C. Paine ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Electronic Transport ◽  
Transport Parameters ◽  
Oxide Thin Films ◽  
Indium Zinc Oxide
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