Silicon temperature measurement by infrared absorption. Fundamental processes and doping effects

J.C. Sturm; C.M. Reaves

doi:10.1109/16.108215

Silicon temperature measurement by infrared absorption. Fundamental processes and doping effects

IEEE Transactions on Electron Devices ◽

10.1109/16.108215 ◽

1992 ◽

Vol 39 (1) ◽

pp. 81-88 ◽

Cited By ~ 56

Author(s):

J.C. Sturm ◽

C.M. Reaves

Keyword(s):

Temperature Measurement ◽

Infrared Absorption ◽

Doping Effects

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Fundamental mechanisms and doping effects in silicon infrared absorption for temperature measurement by infrared transmission

10.1117/12.25714 ◽

1991 ◽

Cited By ~ 3

Author(s):

James C. Sturm ◽

Casper M. Reaves

Keyword(s):

Temperature Measurement ◽

Infrared Absorption ◽

Infrared Transmission ◽

Doping Effects

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In situ temperature measurement by infrared absorption for low-temperature epitaxial growth of homo- and hetero-epitaxial layers on silicon

Journal of Electronic Materials ◽

10.1007/bf02651980 ◽

1990 ◽

Vol 19 (10) ◽

pp. 1051-1054 ◽

Cited By ~ 3

Author(s):

J. C. Sturm ◽

P. V. Schwartz ◽

P. M. Garone

Keyword(s):

Low Temperature ◽

Temperature Measurement ◽

Epitaxial Growth ◽

Infrared Absorption ◽

Epitaxial Layers

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Infrared Techniques for Temperature Measurement in Plasmajets

Journal of Heat Transfer ◽

10.1115/1.3684325 ◽

1962 ◽

Vol 84 (2) ◽

pp. 164-168 ◽

Cited By ~ 2

Author(s):

Richard H. Tourin

Keyword(s):

Temperature Measurement ◽

Absorption Spectra ◽

Infrared Absorption ◽

Low Temperatures ◽

Visible Region ◽

Infrared Emission ◽

Temperature Gradients ◽

Monochromatic Radiation ◽

Emission And Absorption Spectra ◽

Infrared Techniques

The application of monochromatic radiation pyrometry to measurement of plasma temperatures was investigated. Infrared emission and absorption spectra of nitrogen, argon, and helium plasmajets, with various admixtures, were measured. Strong infrared emission was observed in various lines and bands in the plasma spectra, extending from the visible region to 7.0 μ. The observed infrared absorption was generally low. Temperatures measured ranged from below 2000 deg K for a N2 plasmajet heavily seeded with CO2, to 13,000 deg K for pure Ar. Temperature gradients in a plasmajet were inferred from observations made through various regions of the jet.

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Temperature measurement of hot air flow behind shock wave using infrared absorption semiconductor laser

The Proceedings of Conference of Tokai Branch ◽

10.1299/jsmetokai.2018.67.602 ◽

2018 ◽

Vol 2018.67 (0) ◽

pp. 602

Author(s):

Masato Kunieda ◽

Masaharu Komiyama ◽

Keitiro Nomura ◽

Ikumi Kondo

Keyword(s):

Shock Wave ◽

Temperature Measurement ◽

Semiconductor Laser ◽

Infrared Absorption ◽

Air Flow ◽

Hot Air

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Physical modelling of non-invasive silicon temperature measurement by infrared absorption

International Electron Devices Meeting 1991 [Technical Digest] ◽

10.1109/iedm.1991.235281 ◽

2002 ◽

Cited By ~ 2

Author(s):

J.C. Sturm ◽

C.M. Reaves

Keyword(s):

Temperature Measurement ◽

Infrared Absorption ◽

Physical Modelling ◽

Non Invasive

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Doping effects on the geometric and electronic structure of tin clusters

Physical Chemistry Chemical Physics ◽

10.1039/c9cp05124d ◽

2019 ◽

Vol 21 (44) ◽

pp. 24478-24488 ◽

Cited By ~ 1

Author(s):

Martin Gleditzsch ◽

Marc Jäger ◽

Lukáš F. Pašteka ◽

Armin Shayeghi ◽

Rolf Schäfer

Keyword(s):

Density Functional Theory ◽

Electronic Structure ◽

Density Functional ◽

Beam Deflection ◽

Functional Theory ◽

Doping Effects ◽

Depth Analysis ◽

Trajectory Simulations

In depth analysis of doping effects on the geometric and electronic structure of tin clusters via electric beam deflection, numerical trajectory simulations and density functional theory.

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