scholarly journals Lower Growth Temperature Increases Alternative Pathway Capacity and Alternative Oxidase Protein in Tobacco

1992 ◽  
Vol 100 (1) ◽  
pp. 115-119 ◽  
Author(s):  
Greg C. Vanlerberghe ◽  
Lee McIntosh
Keyword(s):  
Growth Temperature ◽  
Alternative Oxidase ◽  
Alternative Pathway ◽  
Lower Growth ◽  
Lower Growth Temperature

Development of LPE process for fabrication of coated conductors

2000 ◽  
Vol 659 ◽  
Author(s):  
Teruo Izumi ◽  
Natsuro Hobara ◽  
Toru Izumi ◽  
Katsuya Hasegawa ◽  
Masahiko Kai ◽  
...  
Keyword(s):  
Growth Temperature ◽  
Recent Progress ◽  
High Growth ◽  
High Growth Rate ◽  
Coated Conductors ◽  
The Other ◽  
Lower Growth ◽  
The Difference ◽  
Lower Growth Temperature ◽  
Selection Of

ABSTRACTRecent Progress of development for coated conductors by the LPE technique was reviewed. Double layered LPE films were applied to the growth on metal substrates. In both cases of MgO- and NiO- buffers, the constructions were succeeded to grow on Hastelloy and Ni tapes, respectively. In the case of the MgO-buffer, the problem, which is the melting back of the 1st LPE layer during dipping for the growth of the 2nd LPE layer, was found. The problem was solved by means of the selection of the materials for each LPE layer to introduce the difference in the growth temperature for the 1st and the 2nd layers. The lower growth temperature for the 1st LPE layer than that for 2nd one is effective to avoid the problem. On the other hand, the double layered LPE films on Ni tapes revealed Tc of 85K. Concerning the long tape processing, the high growth rate of 1≈ was confirmed even without rotation using the long tape apparatus.

LPE Growth of Textured KNbO3 Film Using SrTiO3 Substrate and V2O5 Flux

2006 ◽  
Vol 11-12 ◽  
pp. 109-112
Author(s):  
T. Hibino ◽  
Kenichi Kakimoto ◽  
Hitoshi Ohsato
Keyword(s):  
Thin Films ◽  
Phase Diagram ◽  
Growth Rate ◽  
Liquid Phase ◽  
Surface Morphology ◽  
Liquid Phase Epitaxy ◽  
Growth Temperature ◽  
Film Growth ◽  
Lower Growth ◽  
Lower Growth Temperature

KNbO3 thin films were grown on (100) and (110) SrTiO3 substrates by liquid phase epitaxy (LPE) technique. The film orientation and surface morphology were characterized by XRD and AFM, respectively. The limited phase diagram of K2O-Nb2O5-V2O5 system was prepared by DTA measurement to investigate the effect of V2O5 flux on the LPE growth of KNbO3 film. The use of V2O5 flux enhanced a film growth rate at lower growth temperature.

The Influence of Increasing Carbon Dioxide and Temperature on Competitive Interactions Between a C3 Crop, Rice (Oryza sativa) and a C4 Weed (Echinochloa glabrescens)

1996 ◽  
Vol 23 (6) ◽  
pp. 795 ◽  
Author(s):  
AMP Alberto ◽  
LH Ziska ◽  
CR Cervancia ◽  
PA Manalo
Keyword(s):  
Elevated Co2 ◽  
Growth Temperature ◽  
Competitive Ability ◽  
Relative Yield ◽  
Co2 Concentration ◽  
The Philippines ◽  
Replacement Series ◽  
Lower Growth ◽  
C4 Species ◽  
Lower Growth Temperature

Many of the most troublesome weeds in agricultural systems are C4 plants. As atmospheric CO2 increases it is conceivable that competitive ability of these weeds could be reduced relative to C3 crops such as rice. At the International Rice Research Institute (IRRI) in the Philippines, rice (IR72) and one of its associated C4 weeds, Echinochloa glabrescens, were grown from seeding to maturity using replacement series mixtures (100:0, 75:25, 50:50, 25:75, and 0:100, % rice:%weed) at two different CO2 concentrations (393 and 594 μL L-1) in naturally sunlit glasshouses. Since increasing CO2 may also result in elevated growth temperatures, the response of rice to each CO2 concentration was also examined at daylnight temperatures of 27/21 and 37/29�C. At 27/21�C, increasing the CO2 concentration resulted in a significant increase in above ground biomass (+47%) and seed yield (+55%) of rice when averaged over all mixtures. For E. glabrescens, the C4 species, no significant effect of CO2 concentration on biomass or yield was observed. When grown in mixture, the proportion of rice biomass increased significantly relative to that of the C4 weed at all mixtures at elevated CO2. Evaluation of changes in competitiveness (by calculation of plant relative yield (PRY) and replacement series diagrams) of the two species demonstrated that, at elevated CO2, the competitiveness of rice was increased relative to that of E. glabrescens. However, at the higher growth temperature (37/29�C), growth and reproductive stimulation of rice by elevated CO2 was reduced compared to the lower growth temperature. This resulted in a reduction in the proportion of rice:weed biomass present in all mixtures relative to 27/21�C and a greater reduction in PRY in rice relative to E. glabrescens. Data from this experiment suggest that competitiveness could be enhanced in a C3 crop (rice) relative to a C4 weed (E. glabrescens) with elevated CO2 alone, but that simultaneous increases in CO2 and temperature could still favour a C4 species.

Effect of lower growth temperature on C incorporation in GeC epilayers on grown by MBE

2003 ◽  
Vol 16 (3-4) ◽  
pp. 473-475 ◽  
Author(s):  
M. Okinaka ◽  
Y. Hamana ◽  
T. Tokuda ◽  
J. Ohta ◽  
M. Nunoshita
Keyword(s):  
Growth Temperature ◽  
Lower Growth ◽  
Lower Growth Temperature

Comparison of TiN thin films grown on SiO2 by reactive dc magnetron sputtering and high power impulse magnetron sputtering

2011 ◽  
Vol 1335 ◽  
Author(s):  
F. Magnus ◽  
A. S. Ingason ◽  
O. B. Sveinsson ◽  
S. Olafsson ◽  
J. T. Gudmundsson
Keyword(s):  
Grain Size ◽  
Magnetron Sputtering ◽  
High Power ◽  
Growth Temperature ◽  
Dc Magnetron Sputtering ◽  
Lower Growth ◽  
Tin Films ◽  
Grain Sizes ◽  
Tin Thin Films ◽  
Lower Growth Temperature

ABSTRACTThin TiN films were grown on SiO2 by a reactive dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS) at range of temperatures from 45 to 600oC and the properties compared. The HiPIMS process produces denser films at lower growth temperature than does dcMS and the surface is much smoother for films grown by the HiPIMS process. The grain sizes of both orientations are smaller in HiPIMS grown films than in dcMS grown films. The [200] crystallites have smaller size than the [111] crystallites for all growth temperatures. For the dcMS process the grain size increases with increased growth temperature for both the [111] and [200] crystallites. For the HiPIMS process the [200] grain size increases monotonically with increased growth temperature, whereas the size of the [111] oriented grains decreases to a minimum for growth temperature of 400 oC after which it starts to increase with growth temperature.

Effects of Growth Temperature on MOCVD-Grown GaAs-ON-Si

1989 ◽  
Vol 148 ◽  
Author(s):  
S. Nozaki ◽  
N. Noto ◽  
M. Okada ◽  
T. Egawa ◽  
T. Soga ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Growth Temperature ◽  
Lower Growth ◽  
Rocking Curve ◽  
X Ray ◽  
Gaas On Si ◽  
Good Surface ◽  
Step Growth ◽  
Higher Temperature ◽  
Lower Growth Temperature

ABSTRACTEffects of growth temperature on crystallinity and surface morphology of MOCVD-grown GaAs-on-Si were studied. The FWHM of the (400) x-ray peak in the rocking curve of GaAs-on-Si reduces from 340 to 230 arcs with increasing growth temperature from 650 to 700°C, but further increase of growth temperature does not significantly decrease the FWHM. The surface morphology of GaAs-on-Si grown at higher temperature is scaly and rough. Lower growth temperature is desirable to obtain GaAs-on-Si with good surface morphology. In order to eliminate the trade-off between crystallinity and surface morphology, the three-step growth process is proposed.

Nucleation and Heterointerface Structure of InAs Epilayers Grown on InP Substrates

1992 ◽  
Vol 280 ◽  
Author(s):  
K. S. Chandra Sekhar ◽  
A. K. Ballal ◽  
L. Salamanca-Riba ◽  
D. L. Partin
Keyword(s):  
Surface Morphology ◽  
Electronic Properties ◽  
Growth Temperature ◽  
High Speed ◽  
Interface Roughness ◽  
Structural Defects ◽  
Lower Growth ◽  
Substrate Interface ◽  
Film Substrate ◽  
Inp Substrates

ABSTRACTHeteroepitaxial growth of indium arsenide films on indium phosphide substrates is being actively pursued since the electronic properties of these films make them promising materials for optoelectronic and other high speed devices. The various structural aspects of the film that affect their electronic properties are structural defects like dislocations, film-substrate interface roughness and chemical inhomogeneities. In InAs films, electrons accumulate at the film-air interface, making surface morphology an important factor that decides the electronic properties. The InAs films used in this study were grown on InP substrates by metal organic vapor deposition, at different temperatures. A higher growth temperature not only resulted in poor surface morphology of the film, but also created a rough film-substrate interface. However, at all deposition temperatures, the film-substrate interfaces are sharp. At lower growth temperature, the interfaces were flat. Films grown at lower temperatures had good surface morphology and a flat and shaip heterointerface.

scholarly journals Low-temperature and ammonia-free epitaxy of GaN/AlGaN/GaN heterostructure

2021 ◽  
Author(s):  
David Maria Tobaldi ◽  
Valentina Triminì ◽  
Arianna Cretì ◽  
Mauro Lomascolo ◽  
Stefano Dicorato ◽  
...  
Keyword(s):  
Growth Temperature ◽  
Chemical Vapour ◽  
High Growth ◽  
Wide Band ◽  
Cost Effective ◽  
Organic Chemical ◽  
High Electron ◽  
High Quality ◽  
Lower Growth ◽  
Green Approach

Wide band gap semiconductors are very attractive because of their broad applications as electronics and optoelectronics materials − GaN-based materials being by far the most promising. For the production of such nitride-based optical and power devices, metal-organic chemical vapour deposition (MOCVD) is routinely used. However, this has disadvantages, such as the large consumption of ammonia gas, and the need for high growth temperature. To go beyond such a limit, in this study we successfully developed a remote plasma assisted MOCVD (RPA-MOCVD) approach for the epitaxial growth of high-quality GaN/AlGaN heterostructures on 4H-SiC substrates. Our RPA-MOCVD has the advantages of lower growth temperature (750 °C) compared to conventional MOCVD route, and the use of a remote N2/H2 plasma instead of ammonia for nitrides growth, generating in situ the NHx (x = 0−3) species needed for the growth. As assessed by structural, morphological, optical and electrical characterisation, the proposed strategy provides an overall cost-effective and green approach for high-quality GaN/AlGaN heteroepitaxy, suitable for high electron mobility transistors (HEMT) technology.

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