Comparison of TiN thin films grown on SiO2 by reactive dc magnetron sputtering and high power impulse magnetron sputtering

2011 ◽  
Vol 1335 ◽  
Author(s):  
F. Magnus ◽  
A. S. Ingason ◽  
O. B. Sveinsson ◽  
S. Olafsson ◽  
J. T. Gudmundsson
Keyword(s):  
Grain Size ◽  
Magnetron Sputtering ◽  
High Power ◽  
Growth Temperature ◽  
Dc Magnetron Sputtering ◽  
Lower Growth ◽  
Tin Films ◽  
Grain Sizes ◽  
Tin Thin Films ◽  
Lower Growth Temperature

ABSTRACTThin TiN films were grown on SiO2 by a reactive dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS) at range of temperatures from 45 to 600oC and the properties compared. The HiPIMS process produces denser films at lower growth temperature than does dcMS and the surface is much smoother for films grown by the HiPIMS process. The grain sizes of both orientations are smaller in HiPIMS grown films than in dcMS grown films. The [200] crystallites have smaller size than the [111] crystallites for all growth temperatures. For the dcMS process the grain size increases with increased growth temperature for both the [111] and [200] crystallites. For the HiPIMS process the [200] grain size increases monotonically with increased growth temperature, whereas the size of the [111] oriented grains decreases to a minimum for growth temperature of 400 oC after which it starts to increase with growth temperature.

Structural, Morphological and Adhesion Properties of Cofeb Thin Films Deposited by DC Magnetron Sputtering

2013 ◽  
Vol 802 ◽  
pp. 47-52
Author(s):  
Chuleerat Ibuki ◽  
Rachasak Sakdanuphab
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Magnetron Sputtering ◽  
Crystalline Structure ◽  
Glass Substrate ◽  
Intrinsic Stress ◽  
Dc Magnetron Sputtering ◽  
Adhesion Properties ◽  
Sputtering Power

In this work the effects of amorphous (glass) and crystalline (Si) substrates on the structural, morphological and adhesion properties of CoFeB thin film deposited by DC Magnetron sputtering were investigated. It was found that the structure of a substrate affects to crystal formation, surface morphology and adhesion of CoFeB thin films. The X-Ray diffraction patterns reveal that as-deposited CoFeB thin film at low sputtering power was amorphous and would become crystal when the power increased. The increase in crystalline structure of CoFeB thin film is attributed to the crystalline substrate and the increase of kinetic energy of sputtering atoms. Atomic Force Microscopy images of CoFeB thin film clearly show that the roughness, grain size, and uniformity correlate to the sputtering power and the structure of substrate. The CoFeB thin film on glass substrate shows a smooth surface and a small grain size whereas the CoFeB thin film on Si substrate shows a rough surface and a slightly increases of grain size. Sticky Tape Test on CoFeB thin film deposited on glass substrate indicates the adhesion failure with a high sputtering power. The results suggest that the crystalline structure of substrate affects to the atomic bonding and the sputtering power affects to intrinsic stress of CoFeB thin film.

scholarly journals CuO films deposited by superimposed high power impulse and DC magnetron sputtering

2019 ◽  
Vol 1393 ◽  
pp. 012127
Author(s):  
V A Semenov ◽  
A S Grenadyorov ◽  
V O Oskirko ◽  
A N Zakharov ◽  
S V Rabotkin ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
High Power ◽  
Dc Magnetron Sputtering

Electrical and structural properties of ultrathin polycrystalline and epitaxial TiN films grown by reactive dc magnetron sputtering

2009 ◽  
Vol 1156 ◽  
Author(s):  
Fridrik Magnus ◽  
Arni Sigurdur Ingason ◽  
Sveinn Olafsson ◽  
Jon Tomas Gudmundsson
Keyword(s):  
Magnetron Sputtering ◽  
Structural Properties ◽  
Dc Magnetron Sputtering ◽  
Single Crystalline ◽  
Tin Films ◽  
X Ray

AbstractUltrathin TiN films were grown by reactive dc magnetron sputtering on amorphous SiO2 substrates and single-crystalline MgO substrates at 600°C. The resistance of the films was monitored in-situ during growth to determine the coalescence and continuity thicknesses. TiN films grown on SiO2 are polycrystalline and have coalescence and continuity thicknesses of 8 Å and 19 Å, respectively. TiN films grow epitaxially on the MgO substrates and the coalescence thickness is 2 Å and the thickness where the film becomes continuous cannot be resolved from the coalescence thickness. X-ray reflection measurements indicate a significantly higher density and lower roughness of the epitaxial TiN films.

scholarly journals Effect of target power on the physical properties of Ti thin films prepared by DC magnetron sputtering with supported discharge

2017 ◽  
Vol 35 (1) ◽  
pp. 173-180 ◽  
Author(s):  
A. Kavitha ◽  
R. Kannan ◽  
S. Rajashabala
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Electrical Resistivity ◽  
Magnetron Sputtering ◽  
Physical Properties ◽  
Dc Magnetron Sputtering ◽  
Target Power ◽  
Reactive Gases ◽  
Hot Filament ◽  
Diode Mode

AbstractThe present paper describes the effect of target power on the properties of Ti thin films prepared by DC magnetron sputtering with (triode mode) and without (diode mode) supported discharge. The traditional diode magnetron sputtering with an addition of a hot filament has been used to sustain the discharge at a lower pressure. The effect of target power (60, 80, 100 and 120 W) on the physical properties of Ti thin films has been studied in diode and triode modes. XRD studies showed that the Ti thin films prepared at a target power up to 100 W in diode mode were amorphous in nature. The Ti thin films exhibited crystalline structure at much lower target power of 80 W with a preferred orientation along (0 0 2) plane. The grain size of Ti thin films prepared in triode mode increased from 64 nm to 80 nm, whereas in diode mode, the grain size increased from 2 nm to 5 nm. EDAX analysis confirmed that the incorporation of reactive gases was lower in triode mode compared to diode mode. The electrical resistivity of Ti thin films deposited in diode mode was found to be 85 µΩ⋅cm (target power 120 W). The electrical resistivity of Ti thin films in triode mode was found to be deceased to 15.2 µΩ⋅cm (target power 120 W).

Development of LPE process for fabrication of coated conductors

2000 ◽  
Vol 659 ◽  
Author(s):  
Teruo Izumi ◽  
Natsuro Hobara ◽  
Toru Izumi ◽  
Katsuya Hasegawa ◽  
Masahiko Kai ◽  
...  
Keyword(s):  
Growth Temperature ◽  
Recent Progress ◽  
High Growth ◽  
High Growth Rate ◽  
Coated Conductors ◽  
The Other ◽  
Lower Growth ◽  
The Difference ◽  
Lower Growth Temperature ◽  
Selection Of

ABSTRACTRecent Progress of development for coated conductors by the LPE technique was reviewed. Double layered LPE films were applied to the growth on metal substrates. In both cases of MgO- and NiO- buffers, the constructions were succeeded to grow on Hastelloy and Ni tapes, respectively. In the case of the MgO-buffer, the problem, which is the melting back of the 1st LPE layer during dipping for the growth of the 2nd LPE layer, was found. The problem was solved by means of the selection of the materials for each LPE layer to introduce the difference in the growth temperature for the 1st and the 2nd layers. The lower growth temperature for the 1st LPE layer than that for 2nd one is effective to avoid the problem. On the other hand, the double layered LPE films on Ni tapes revealed Tc of 85K. Concerning the long tape processing, the high growth rate of 1≈ was confirmed even without rotation using the long tape apparatus.

Effect of Sputtering Gas Pressure and Bias Voltage on Mechanical Properties of TiN Coating Deposited by DC Magnetron Sputtering

2004 ◽  
Author(s):  
Hirotaka Tanabe ◽  
Yoshio Miyoshi ◽  
Tohru Takamatsu ◽  
Hitoshi Awano ◽  
Takaaki Yamano
Keyword(s):  
Mechanical Properties ◽  
Residual Stress ◽  
Magnetron Sputtering ◽  
Bias Voltage ◽  
Adhesive Strength ◽  
Gas Pressure ◽  
Dc Magnetron Sputtering ◽  
Tin Films ◽  
Bombarding Energy ◽  
Gas Pressures

The mechanical properties of TiN films deposited on carbon steel JIS S45C by reactive dc magnetron sputtering under three sputtering gas pressures, 0.5Pa, 0.8Pa, and 1.76Pa were investigated. The residual stress once increased and then decreased with increasing bias voltage at 0.5Pa and 0.8Pa, but increased monotonously at 1.76Pa. These variations could be explained by the variations of the bombarding energy of a sputtered ion at each gas pressure. The variations of hardness and toughness correlated with the variation of residual stress. The variation of adhesive strength also could be explained by the variation of the bombarding energy with a model proposed in this study. A specific wear rate was also investigated, and it was found that to increase not only the hardness but also the adhesive strength is necessary to improve the wear resistance of TiN films.

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