scholarly journals Evidence for Topological Edge States in a Large Energy Gap near the Step Edges on the Surface ofZrTe5

2016 ◽  
Vol 6 (2) ◽  
Author(s):  
R. Wu ◽  
J.-Z. Ma ◽  
S.-M. Nie ◽  
L.-X. Zhao ◽  
X. Huang ◽  
...  
Keyword(s):  
Energy Gap ◽  
Large Energy ◽  
Edge States ◽  
Step Edges

scholarly journals Effects of A Magnetic Field on the Transport and Noise Properties of a Graphene Ribbon with Antidots

Nanomaterials ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 2098
Author(s):  
Paolo Marconcini ◽  
Massimo Macucci
Keyword(s):  
Magnetic Field ◽  
Numerical Simulation ◽  
Charge Transport ◽  
Shot Noise ◽  
Energy Gap ◽  
Mass Term ◽  
Edge States ◽  
Graphene Ribbon ◽  
The Magnetic Field ◽  
Armchair Graphene

We perform a numerical simulation of the effects of an orthogonal magnetic field on charge transport and shot noise in an armchair graphene ribbon with a lattice of antidots. This study relies on our envelope-function based code, in which the presence of antidots is simulated through a nonzero mass term and the magnetic field is introduced with a proper choice of gauge for the vector potential. We observe that by increasing the magnetic field, the energy gap present with no magnetic field progressively disappears, together with features related to commensurability and quantum effects. In particular, we focus on the behavior for high values of the magnetic field: we notice that when it is sufficiently large, the effect of the antidots vanishes and shot noise disappears, as a consequence of the formation of edge states crawling along the boundaries of the structure without experiencing any interaction with the antidots.

ELECTRICAL CONDUCTANCE OF ZIGZAG NANOGRAPHITE RIBBONS WITH LOCALLY APPLIED GATE VOLTAGE

2002 ◽  
Vol 16 (32) ◽  
pp. 4897-4909 ◽  
Author(s):  
KATSUNORI WAKABAYASHI ◽  
TAKASHI AOKI
Keyword(s):  
Gate Voltage ◽  
Chemical Potential ◽  
Single Channel ◽  
Energy Gap ◽  
Electrical Conductance ◽  
Transmission Probability ◽  
Edge States ◽  
Transport Channel ◽  
Electric Conductance ◽  
Voltage Bias

The electric conductance of the graphite ribbon with locally applied gate voltage has been studied in terms of the Landauer approach. In the low-energy region, nano-graphite ribbon with zigzag boundaries exhibits the single electronic transport channel due to the edge states. The chemical potential dependence of the electric conductance shows qualitatively different behavior, depending on whether the magnitude of the potential barrier (gate voltage bias) Vg is larger than the energy gap Δ of the single channel region of the zigzag ribbon. For positive Vg with Vg < Δ, the zero-conductance resonances appear for 0 ≤ E ≤ Vg, and average transmission probability is quite small in this region. However the transmission probability is almost one, i.e. perfect transmission, for E > Vg. This step-function-like behavior of the conductance shows that it is possible to fabricate a nano-graphite-based switching device by the application of weak gate voltage bias.

Massive polarons in large-energy-gap polymers

1989 ◽  
Vol 39 (14) ◽  
pp. 10174-10178 ◽  
Author(s):  
R. P. McCall ◽  
J. M. Ginder ◽  
M. G. Roe ◽  
G. E. Asturias ◽  
E. M. Scherr ◽  
...  
Keyword(s):  
Energy Gap ◽  
Large Energy

Specific heat evidence for a large energy gap in YBCO

1988 ◽  
Vol 153-155 ◽  
pp. 1020-1021 ◽  
Author(s):  
W. Loram ◽  
K.A. Mirza
Keyword(s):  
Specific Heat ◽  
Energy Gap ◽  
Large Energy

scholarly journals Zero modes, energy gap, and edge states of anisotropic honeycomb lattice in a magnetic field

2009 ◽  
Vol 80 (12) ◽  
Author(s):  
Kenta Esaki ◽  
Masatoshi Sato ◽  
Mahito Kohmoto ◽  
Bertrand I. Halperin
Keyword(s):  
Magnetic Field ◽  
Energy Gap ◽  
Honeycomb Lattice ◽  
Edge States ◽  
Zero Modes

scholarly journals CONTRACTION OF HIGHER ORDER DERIVATIVE SUSY ALGEBRAS IN QUANTUM MECHANICS WITH LARGE ENERGY GAP

1996 ◽  
Vol 11 (17) ◽  
pp. 1417-1428 ◽  
Author(s):  
A.A. ANDRIANOV ◽  
M.V. IOFFE ◽  
F. CANNATA
Keyword(s):  
Energy Gap ◽  
Deep Level ◽  
Linearization Method ◽  
Higher Order ◽  
Large Energy ◽  
Order Derivative ◽  
Singular Behavior ◽  
Higher Derivative ◽  
Higher Order Derivative ◽  
Infinite Energy

Starting from a polynomial (higher-order derivative) quantum mechanical SUSY algebra we study its contraction to the standard SUSYQM in the limit of large energy shifts between the lowest states of the super-Hamiltonian (of Schrödinger type). By a quasi-linearization method we obtain the charges of the higher derivative SUSY algebra in the (singular) limit of infinite energy gap, and find the resulting Hamiltonian. The singular behavior of the potential generated by this construction reflects the existence of the very deep level. Our results can suggest constructions of toy models where large energy splittings between fermionic and bosonic partners do not affect SUSY for other states.

TUNNELING MEASUREMENTS OF THE ENERGY GAP IN HIGH-Tc SUPERCONDUCTORS

1990 ◽  
Vol 04 (02) ◽  
pp. 201-237 ◽  
Author(s):  
J. R. KIRTLEY
Keyword(s):  
Fermi Level ◽  
Density Of States ◽  
Energy Gap ◽  
Large Energy ◽  
Current Status ◽  
High Tc Superconductors ◽  
High Tc ◽  
Gap Anisotropy ◽  
Consistent Picture ◽  
Coherence Lengths

The current status of tunneling measurements of the superconducting density of states near the Fermi level of high-T c superconductors is reviewed. A number of the characteristics of the tunneling data that had previously been considered to be "non-ideal" follow quite naturally from conventional tunneling theory, if the effects of the unusually large energy gap, often unusually small tunneling barriers, and gap anisotropy and/or inhomogeneity are correctly accounted for. Despite formidable problems in making these measurements, due to both the very short coherence lengths and materials problems in these superconductors, a consistent body of data is emerging. A consistent picture can be drawn from this data with the aid of the new modelling presented here.

Thiolate-Protected Au20Clusters with a Large Energy Gap of 2.1 eV

2009 ◽  
Vol 131 (21) ◽  
pp. 7220-7221 ◽  
Author(s):  
Manzhou Zhu ◽  
Huifeng Qian ◽  
Rongchao Jin
Keyword(s):  
Energy Gap ◽  
Large Energy

scholarly journals Direct Imaging of Band Profile in Single Layer MoS2 on Graphite: Quasiparticle Energy Gap, Metallic Edge States, and Edge Band Bending

Nano Letters ◽  
2014 ◽  
Vol 14 (5) ◽  
pp. 2443-2447 ◽  
Author(s):  
Chendong Zhang ◽  
Amber Johnson ◽  
Chang-Lung Hsu ◽  
Lain-Jong Li ◽  
Chih-Kang Shih
Keyword(s):  
Energy Gap ◽  
Single Layer ◽  
Edge States ◽  
Direct Imaging ◽  
Band Bending ◽  
Band Profile ◽  
Quasiparticle Energy ◽  
Edge Band

scholarly journals Topological Metal-Insulator Transition in Narrow Graphene Nanoribbons?

2020 ◽  
Author(s):  
Aristides Zdetsis ◽  
Eleftherios Economou
Keyword(s):  
Dirac Point ◽  
Energy Gap ◽  
Graphene Nanoribbons ◽  
Critical Length ◽  
Dimensional System ◽  
Edge States ◽  
Aromatic Rings ◽  
Metal Insulator ◽  
A Value ◽  
Armchair Graphene Nanoribbons

We show that very narrow armchair graphene nanoribbons (AGNRs) of length L and width of 2 zigzag-rings undergo a metal-insulator-like transition at a critical length of 10nm, where the energy gap drops rather abruptly, and the conductivity, estimated, through an invoked computational scheme, rises almost discontinuously to a value between that of a perfect quasi one-dimensional system, and the nominal minimum conductivity of graphene. At this length, the aromatic and non-aromatic rings are interchanged, and sharp peaks appear in the density of states around the Fermi level, suggesting metallic-like behaviour. Such peaks linked to edge states at the Dirac point(s) coincide with the charge-neutrality point(s), associated with the minimum conductivity of graphene. Thus, we have an uncommon combination of interrelated “short-long”, “core-edge,” topological-aromatic transition(s) due to strong quantum confinement, driven by inversion symmetry conflict. The bandgap decreases with the 2/3 power of length before the “transition” and logarithmically afterwards. These effects are practically non-existent for wider AGNRs

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