scholarly journals Direct Imaging of Band Profile in Single Layer MoS2 on Graphite: Quasiparticle Energy Gap, Metallic Edge States, and Edge Band Bending

Nano Letters ◽  
2014 ◽  
Vol 14 (5) ◽  
pp. 2443-2447 ◽  
Author(s):  
Chendong Zhang ◽  
Amber Johnson ◽  
Chang-Lung Hsu ◽  
Lain-Jong Li ◽  
Chih-Kang Shih
Keyword(s):  
Energy Gap ◽  
Single Layer ◽  
Edge States ◽  
Direct Imaging ◽  
Band Bending ◽  
Band Profile ◽  
Quasiparticle Energy ◽  
Edge Band

Energy gap opening by crossing drop cast single-layer graphene nanoribbons

2018 ◽  
Vol 29 (31) ◽  
pp. 315705 ◽  
Author(s):  
Toyo Kazu Yamada ◽  
Hideto Fukuda ◽  
Taizo Fujiwara ◽  
Polin Liu ◽  
Kohji Nakamura ◽  
...  
Keyword(s):  
Energy Gap ◽  
Graphene Nanoribbons ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Layer Graphene ◽  
Gap Opening

scholarly journals A Study of Interfacial Electronic Structure at the CuPc/CsPbI2Br Interface

Crystals ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 547
Author(s):  
Zengguang Tang ◽  
Liujiang Zhang ◽  
Zhenhuang Su ◽  
Zhen Wang ◽  
Li Chen ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Molecular Orbital ◽  
Photoelectron Spectroscopy ◽  
High Performance ◽  
Energy Gap ◽  
Hole Transport ◽  
Hole Injection ◽  
Band Bending ◽  
Valance Band Maximum ◽  
Interfacial Electronic Structure

In this article, CsPbI2Br perovskite thin films were spin-coated on FTO, on which CuPc was deposited by thermal evaporation. The electronic structure at the CsPbI2Br/CuPc interface was examined during the CuPc deposition by in situ X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS) measurements. No downward band bending was resolved at the CsPbI2Br side, whereas there is ~0.23 eV upward band bending as well as a dipole of ~0.08 eV identified at the molecular side. Although the hole injection barrier as indicated by the energy gap from CsPbI2Br valance band maximum (VBM) to CuPc highest occupied molecular orbital (HOMO) was estimated to be ~0.26 eV, favoring hole extraction from CsPbI2Br to CuPc, the electron blocking barrier of ~0.04 eV as indicated by the offset between CsPbI2Br conduction band minimum (CBM) and CuPc lowest unoccupied molecular orbital (LUMO) is too small to efficiently block electron transfer. Therefore, the present experimental study implies that CuPc may not be a promising hole transport material for high-performance solar cells using CsPbI2Br as active layer.

scholarly journals The effect of moiré superstructures on topological edge states in twisted bismuthene homojunctions

2020 ◽  
Vol 6 (23) ◽  
pp. eaba2773 ◽  
Author(s):  
Jian Gou ◽  
Longjuan Kong ◽  
Xiaoyue He ◽  
Yu Li Huang ◽  
Jiatao Sun ◽  
...  
Keyword(s):  
Single Layer ◽  
Scanning Tunneling ◽  
Edge States ◽  
First Principles Calculations ◽  
Tunneling Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Spatially Distributed ◽  
Topological States ◽  
Device Applications

Creating and controlling the topological properties of two-dimensional topological insulators is essential for spintronic device applications. Here, we report the successful growth of bismuth homostructure consisting of monolayer bismuthene and single-layer black phosphorus–like Bi (BP-Bi) on the HOPG surface. Combining scanning tunneling microscopy/spectroscopy with noncontact atomic force microscopy, moiré superstructures with twist angles in the bismuth homostructure and the modulation of topological edge states of bismuthene were observed and studied. First-principles calculations reproduced the moiré superlattice and indicated that the structure fluctuation is ascribed to the stacking modes between bismuthene and BP-Bi, which induce spatially distributed interface interactions in the bismuth homostructure. The modulation of topological edge states is directly related to the variation of interlayer interactions. Our results suggest a promising pathway to tailor the topological states through interfacial interactions.

Two-dimensional ferroelastic topological insulator with tunable topological edge states in single-layer ZrAsX (X = Br and Cl)

2019 ◽  
Vol 7 (31) ◽  
pp. 9743-9747 ◽  
Author(s):  
Xiangting Hu ◽  
Ning Mao ◽  
Hao Wang ◽  
Chengwang Niu ◽  
Baibiao Huang ◽  
...  
Keyword(s):  
Topological Insulator ◽  
Single Layer ◽  
Two Dimensional ◽  
Edge States

Here we predict theoretically that topological edge states can be significantly tuned by switching the ferroelastic ordering in a two-dimensional (2D) topological insulator.

scholarly journals Effects of A Magnetic Field on the Transport and Noise Properties of a Graphene Ribbon with Antidots

Nanomaterials ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 2098
Author(s):  
Paolo Marconcini ◽  
Massimo Macucci
Keyword(s):  
Magnetic Field ◽  
Numerical Simulation ◽  
Charge Transport ◽  
Shot Noise ◽  
Energy Gap ◽  
Mass Term ◽  
Edge States ◽  
Graphene Ribbon ◽  
The Magnetic Field ◽  
Armchair Graphene

We perform a numerical simulation of the effects of an orthogonal magnetic field on charge transport and shot noise in an armchair graphene ribbon with a lattice of antidots. This study relies on our envelope-function based code, in which the presence of antidots is simulated through a nonzero mass term and the magnetic field is introduced with a proper choice of gauge for the vector potential. We observe that by increasing the magnetic field, the energy gap present with no magnetic field progressively disappears, together with features related to commensurability and quantum effects. In particular, we focus on the behavior for high values of the magnetic field: we notice that when it is sufficiently large, the effect of the antidots vanishes and shot noise disappears, as a consequence of the formation of edge states crawling along the boundaries of the structure without experiencing any interaction with the antidots.

ELECTRICAL CONDUCTANCE OF ZIGZAG NANOGRAPHITE RIBBONS WITH LOCALLY APPLIED GATE VOLTAGE

2002 ◽  
Vol 16 (32) ◽  
pp. 4897-4909 ◽  
Author(s):  
KATSUNORI WAKABAYASHI ◽  
TAKASHI AOKI
Keyword(s):  
Gate Voltage ◽  
Chemical Potential ◽  
Single Channel ◽  
Energy Gap ◽  
Electrical Conductance ◽  
Transmission Probability ◽  
Edge States ◽  
Transport Channel ◽  
Electric Conductance ◽  
Voltage Bias

The electric conductance of the graphite ribbon with locally applied gate voltage has been studied in terms of the Landauer approach. In the low-energy region, nano-graphite ribbon with zigzag boundaries exhibits the single electronic transport channel due to the edge states. The chemical potential dependence of the electric conductance shows qualitatively different behavior, depending on whether the magnitude of the potential barrier (gate voltage bias) Vg is larger than the energy gap Δ of the single channel region of the zigzag ribbon. For positive Vg with Vg < Δ, the zero-conductance resonances appear for 0 ≤ E ≤ Vg, and average transmission probability is quite small in this region. However the transmission probability is almost one, i.e. perfect transmission, for E > Vg. This step-function-like behavior of the conductance shows that it is possible to fabricate a nano-graphite-based switching device by the application of weak gate voltage bias.

scholarly journals Versatile electronic properties and exotic edge states of single-layer tetragonal silicon carbides

2015 ◽  
Vol 17 (17) ◽  
pp. 11211-11216 ◽  
Author(s):  
Chao Yang ◽  
Yuee Xie ◽  
Li-Min Liu ◽  
Yuanping Chen
Keyword(s):  
Density Functional Theory ◽  
Electronic Properties ◽  
Density Functional ◽  
Single Layer ◽  
Edge States ◽  
Functional Theory ◽  
Dft Computations ◽  
Silicon Carbides

Three single-layer tetragonal silicon carbides (SiCs), termed as T1, T2 and T3, are proposed by density functional theory (DFT) computations.

Effects of carrier mobility, energy gap, and excitation size on the performance of single layer organic solar cells

2008 ◽  
Vol 4 (6) ◽  
pp. 410-414 ◽  
Author(s):  
Zi-jie Guo ◽  
Hong-wei Xing ◽  
Yu-hang Wang ◽  
Yue-jie Ma ◽  
De-quan Liu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Organic Solar Cells ◽  
Carrier Mobility ◽  
Energy Gap ◽  
Single Layer

scholarly journals Zero modes, energy gap, and edge states of anisotropic honeycomb lattice in a magnetic field

2009 ◽  
Vol 80 (12) ◽  
Author(s):  
Kenta Esaki ◽  
Masatoshi Sato ◽  
Mahito Kohmoto ◽  
Bertrand I. Halperin
Keyword(s):  
Magnetic Field ◽  
Energy Gap ◽  
Honeycomb Lattice ◽  
Edge States ◽  
Zero Modes

Photoreflectance spectroscopy of the band bending and the energy gap for Mg-doped InN layers

2009 ◽  
Vol 6 (S2) ◽  
pp. S739-S742 ◽  
Author(s):  
R. Kudrawiec ◽  
T. Suski ◽  
J. Misiewicz ◽  
D. Muto ◽  
Y. Nanishi
Keyword(s):  
Energy Gap ◽  
Band Bending ◽  
Photoreflectance Spectroscopy ◽  
Mg Doped
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