scholarly journals Modification on surface oxide layer structure and surface morphology of niobium by gas cluster ion beam treatments

2010 ◽  
Vol 13 (9) ◽  
Author(s):  
A. T. Wu ◽  
D. R. Swenson ◽  
Z. Insepov
Keyword(s):  
Surface Morphology ◽  
Oxide Layer ◽  
Layer Structure ◽  
Ion Beam ◽  
Surface Oxide ◽  
Surface Oxide Layer ◽  
Cluster Ion ◽  
Gas Cluster Ion Beam

Gas Cluster Ion Beam Processing of GaSb and InSb Surfaces

2003 ◽  
Vol 792 ◽  
Author(s):  
K. Krishnaswami ◽  
S.R. Vangala ◽  
B. Krejca ◽  
L.P. Allen ◽  
C. Santeufemio ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Molecular Beam ◽  
Ion Beam ◽  
Total Charge ◽  
Surface Smoothing ◽  
Average Roughness ◽  
Molecular Beam Epitaxial ◽  
Cluster Ion ◽  
Gas Cluster Ion Beam ◽  
A Charge

ABSTRACTGas Cluster Ion Beam (GCIB) processing has recently emerged as a novel surface smoothing technique to improve the finish of chemical-mechanical polished (CMP) GaSb (100) and InSb (111) wafers. This technique is capable of improving the smoothness CMP surfaces and simultaneously producing a thin desorbable oxide layer for molecular beam epitaxial growth. By implementing recipes with specific gas mixtures, cluster energy sequences, and doses, an engineered oxide can be produced. Using GaSb wafers with a high quality CMP finish, we have demonstrated surface smoothing of GaSb by reducing the average roughness from 2.8Å to 1.7Å using a dual energy CF4/O2-GCIB process with a total charge fluence of 4×1015ions/cm2. For the first time, a GCIB grown oxide layer that is comprised of mostly gallium oxides which desorbed at 530°C in our molecular beam epitaxy system is reported, after which GaSb/AlGaSb epilayers have been successfully grown. Using InSb, we successfully demonstrated substrate smoothing by reducing the average roughness from 2.5Å to 1.6Å using a triple energy O2-GCIB process with a charge fluence 9×1015ions/cm2. In order to further demonstrate the ability of GCIB to smooth InSb surfaces, sharp ∼900nm high tips have been formed on a poorly mechanically polished InSb (111)A wafer and subsequently reduced to a height of ∼100nm, an improvement by a factor of eight, using a triple energy SF6/O2-GCIB process with a total charge fluence of 6×1016ions/cm3.

Gas cluster ion beam processing equipment

2002 ◽  
Author(s):  
J. Bachand ◽  
A. Freytsis ◽  
E. Harrington ◽  
M. Gwinn ◽  
N. Hofmeester ◽  
...  
Keyword(s):  
Ion Beam ◽  
Processing Equipment ◽  
Cluster Ion ◽  
Gas Cluster Ion Beam

Effect of surface oxide layer on deuterium permeation behaviors through a type 316 stainless steel

2012 ◽  
Vol 87 (5-6) ◽  
pp. 580-583 ◽  
Author(s):  
Yasuhisa Oya ◽  
Makoto Kobayashi ◽  
Junya Osuo ◽  
Masato Suzuki ◽  
Akiko Hamada ◽  
...  
Keyword(s):  
Stainless Steel ◽  
Oxide Layer ◽  
Surface Oxide ◽  
Surface Oxide Layer ◽  
316 Stainless Steel ◽  
Effect Of Surface

Gas Cluster Ion Beam Processing for Si Photonics

2007 ◽  
Author(s):  
N. Toyoda ◽  
l. Yamada ◽  
S. Akiyama ◽  
L.C. Kimerling ◽  
Y. Ishikawa ◽  
...  
Keyword(s):  
Ion Beam ◽  
Si Photonics ◽  
Cluster Ion ◽  
Gas Cluster Ion Beam

Ar gas cluster ion beam assisted XPS study of LiNbO3 Z cut surface

2021 ◽  
pp. 101428
Author(s):  
E.A. Skryleva ◽  
B.R. Senatulin ◽  
D.A. Kiselev ◽  
T.S. Ilina ◽  
D.A. Podgorny ◽  
...  
Keyword(s):  
Ion Beam ◽  
Cluster Ion ◽  
Gas Cluster Ion Beam ◽  
Ar Gas ◽  
Xps Study ◽  
Cut Surface

Smoothing Thin Films with Gas-Cluster Ion Beams

2000 ◽  
Vol 614 ◽  
Author(s):  
D.B. Fenner ◽  
J. Hautala ◽  
L.P. Allen ◽  
J.A. Greer ◽  
W.J. Skinner ◽  
...  
Keyword(s):  
Thin Film ◽  
Ion Beam ◽  
Spin Valve ◽  
High Spatial Frequency ◽  
Atomic Scale ◽  
Force Microscopy ◽  
Tantalum Films ◽  
Cluster Ion Beams ◽  
Cluster Ion ◽  
Gas Cluster Ion Beam

ABSTRACTThin-film magnetic sensor and memory devices in future generations may benefit from a processing tool for final-step etching and smoothing of surfaces to nearly an atomic scale. Gas-cluster ion-beam (GCIB) systems make possible improved surface sputtering and processing for many types of materials. We propose application of GCIB processing as a key smoothing step in thin-film magnetic-materials technology, especially spin-valve GMR. Results of argon GCIB etching and smoothing of surfaces of alumina, silicon, permalloy and tantalum films are reported. No accumulating roughness or damage is observed. The distinct scratches and tracks seen in atomic-force microscopy of CMP-processed surfaces, are removed almost entirely by subsequent GCIB processing. The technique primarily reduces high spatial-frequency roughness and renders the topographic surface elevations more nearly gaussian (randomly distributed).

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