scholarly journals Large thermoelectric power factor of high-mobility transition-metal dichalcogenides with 1T″ phase

2020 ◽  
Vol 2 (1) ◽  
Author(s):  
Yanfeng Ge ◽  
Wenhui Wan ◽  
Yulu Ren ◽  
Yong Liu
Keyword(s):  
Transition Metal ◽  
Thermoelectric Power ◽  
Power Factor ◽  
Transition Metal Dichalcogenides ◽  
High Mobility ◽  
Thermoelectric Power Factor ◽  
Metal Dichalcogenides

scholarly journals High mobility and high thermoelectric power factor in epitaxial ScN thin films deposited with plasma-assisted molecular beam epitaxy

2020 ◽  
Vol 116 (15) ◽  
pp. 152103 ◽  
Author(s):  
Dheemahi Rao ◽  
Bidesh Biswas ◽  
Eduardo Flores ◽  
Abhijit Chatterjee ◽  
Magnus Garbrecht ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Thermoelectric Power ◽  
Power Factor ◽  
Molecular Beam ◽  
High Mobility ◽  
Thermoelectric Power Factor

scholarly journals High-mobility field-effect transistors based on transition metal dichalcogenides

2004 ◽  
Vol 84 (17) ◽  
pp. 3301-3303 ◽  
Author(s):  
V. Podzorov ◽  
M. E. Gershenson ◽  
Ch. Kloc ◽  
R. Zeis ◽  
E. Bucher
Keyword(s):  
Transition Metal ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Transition Metal Dichalcogenides ◽  
High Mobility ◽  
Metal Dichalcogenides

scholarly journals High Thermoelectric Power Factor of High-Mobility 2D Electron Gas

2017 ◽  
Vol 5 (1) ◽  
pp. 1700696 ◽  
Author(s):  
Hiromichi Ohta ◽  
Sung Wng Kim ◽  
Shota Kaneki ◽  
Atsushi Yamamoto ◽  
Tamotsu Hashizume
Keyword(s):  
Thermoelectric Power ◽  
Power Factor ◽  
Electron Gas ◽  
High Mobility ◽  
Thermoelectric Power Factor ◽  
2D Electron Gas

scholarly journals Enormous thermoelectric power factor of ZrTe2/SrTiO3 heterostructure

2021 ◽  
Author(s):  
Chun Hung Suen ◽  
Songhua Cai ◽  
Hui Li ◽  
Xiaodan Tang ◽  
Huichao Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermoelectric Power ◽  
Power Factor ◽  
High Performance ◽  
Transition Metal Dichalcogenides ◽  
Thermoelectric Device ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Thermoelectric Power Factor ◽  
Dimensional Electron Gas

Abstract Achieving high thermoelectric power factor in thin film heterostructures is essential for integrated and miniaturized thermoelectric device applications. In this work, we demonstrate a mechanism to enhance thermoelectric power factor through coupling the interfacial confined two-dimensional electron gas (2DEG) with thin film conductivity in a transition metal dichalcogenides-SrTiO3 heterostructure. Owing to the formed conductive interface with two-dimensional electron confinement effect and the elevated conductivity, the ZrTe2/SrTiO3 (STO) heterostructure presents enormous thermoelectric power factor as high as 4×10^5 μW cm^(-1) K^(-2) at 20 K and 4800 μW cm^(-1) K^(-2) at room temperature. Interfacial reaction induced degradation of Ti cations valence number from Ti4+ to Ti3+ is attributed to be responsible for the formation of the quasi-two-dimensional electrons at the interface which results in very large Seebeck coefficient; and the enhanced electrical conductivity is suggested to be originated from the charge transfer induced doping in the ZrTe2. By taking the thermal conductivity of STO substrate as a reference, the effective zT value of this heterostructure can reach 15 at 300 K. This superior thermoelectric property makes this heterostructure a promising candidate for future thermoelectric device, and more importantly, paves a new pathway to design promising high-performance thermoelectric systems.

Bidirectional doping of two-dimensional thin-layer transition metal dichalcogenides by soft ammonia plasma

Nanoscale ◽  
2021 ◽  
Author(s):  
Pu Tan ◽  
Kaixuan Ding ◽  
Xiumei Zhang ◽  
Zhenhua Ni ◽  
Kostya Ostrikov ◽  
...  
Keyword(s):  
Transition Metal ◽  
Thin Layer ◽  
Band Gap ◽  
Transition Metal Dichalcogenides ◽  
High Mobility ◽  
Two Dimensional ◽  
Layer Transition ◽  
Microelectronic Devices ◽  
Metal Dichalcogenides ◽  
P Type

Because of suitable band gap and high mobility, two-dimensional transition metal dichalcogenides (TMDs) materials are promising in future microelectronic devices. However, controllable p-type and n-type doping of TMDs is still...

scholarly journals Excellent thermoelectric performance of ZrTe2 thin films and device

2021 ◽  
Author(s):  
Chun Hung Suen ◽  
Songhua Cai ◽  
Hui Li ◽  
Long Zhang ◽  
Kunya Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermoelectric Power ◽  
Power Factor ◽  
High Performance ◽  
Transition Metal Dichalcogenides ◽  
Thermoelectric Device ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Thermoelectric Power Factor ◽  
Dimensional Electron Gas

Abstract Achieving high thermoelectric power factor in thin film heterostructures is essential for integrated and miniatured thermoelectric device applications. In this work, we demonstrate a mechanism and device performance of enhanced thermoelectric power factor through coupling the interfacial confined two-dimensional electron gas (2DEG) with thin film conductivity in a transition metal dichalcogenides-SrTiO3 heterostructure. Owing to the formed conductive interface with two-dimensional electron confinement effect and the elevated conductivity, the ZrTe2/SrTiO3 (STO) heterostructure presents enormous thermoelectric power factor as high as 4×10^5 μW/cmK^2 at 20 K and 4800 μW/cmK^2 at room temperature. Formation of quasi-two-dimensional electrons gas at the interface is attributed to the giant Seebeck coefficient, and enhanced electrical conductivity is suggested to be originated from charge transfer induced doping in the ZrTe2, which leads to extremely large thermoelectric power factor. By taking the thermal conductivity of STO substrate as a reference, the effective zT value of this heterostructure can reach 1.5 at 300 K. This high thermoelectric figure of merit is demonstrated by a prototype device based on this heterostructure which results in 3K temperature cooling by passing through a current of 100 mA. This superior thermoelectric property makes this heterostructure a promising candidate for future thermoelectric device, and more importantly, paves a new pathway to design promising high-performance thermoelectric systems.

Sign in / Sign up

Export Citation Format

Share Document