scholarly journals Detecting Electronic States at Stacking Faults in Magnetic Thin Films by Tunneling Spectroscopy

2000 ◽  
Vol 85 (20) ◽  
pp. 4365-4368 ◽  
Author(s):  
A. L. Vázquez de Parga ◽  
F. J. García-Vidal ◽  
R. Miranda
1995 ◽  
Vol 51 (17) ◽  
pp. 11538-11545 ◽  
Author(s):  
Franco Ciccacci ◽  
Stefano De Rossi

Author(s):  
L. Tang ◽  
G. Thomas ◽  
M. R. Khan ◽  
S. L. Duan

Cr thin films are often used as underlayers for Co alloy magnetic thin films, such as Co1, CoNi2, and CoNiCr3, for high density longitudinal magnetic recording. It is belived that the role of the Cr underlayer is to control the growth and texture of the Co alloy magnetic thin films, and, then, to increase the in plane coercivity of the films. Although many epitaxial relationship between the Cr underlayer and the magnetic films, such as ﹛1010﹜Co/ {110﹜Cr4, ﹛2110﹜Co/ ﹛001﹜Cr5, ﹛0002﹜Co/﹛110﹜Cr6, have been suggested and appear to be related to the Cr thickness, the texture of the Cr underlayer itself is still not understood very well. In this study, the texture of a 2000 Å thick Cr underlayer on Nip/Al substrate for thin films of (Co75Ni25)1-xTix dc-sputtered with - 200 V substrate bias is investigated by electron microscopy.


Author(s):  
William Krakow

It has long been known that defects such as stacking faults and voids can be quenched from various alloyed metals heated to near their melting point. Today it is common practice to irradiate samples with various ionic species of rare gases which also form voids containing solidified phases of the same atomic species, e.g. ref. 3. Equivalently, electron irradiation has been used to produce damage events, e.g. ref. 4. Generally all of the above mentioned studies have relied on diffraction contrast to observe the defects produced down to a dimension of perhaps 10 to 20Å. Also all these studies have used ions or electrons which exceeded the damage threshold for knockon events. In the case of higher resolution studies the present author has identified vacancy and interstitial type chain defects in ion irradiated Si and was able to identify both di-interstitial and di-vacancy chains running through the foil.


2008 ◽  
Vol 42 (2) ◽  
pp. 125-128
Author(s):  
J. F. Al-Sharab ◽  
J. E. Wittig ◽  
G. Bertero ◽  
T. Yamashita ◽  
J. Bentley ◽  
...  

2000 ◽  
Vol 454-456 ◽  
pp. 723-728 ◽  
Author(s):  
H. Magnan ◽  
P. Le Fèvre ◽  
A. Midoir ◽  
D. Chandesris ◽  
H. Jaffrès ◽  
...  

2010 ◽  
Vol 46 (2) ◽  
pp. 630-633 ◽  
Author(s):  
Zung-Hang Wei ◽  
Chi-Kuen Lo ◽  
Da-Ren Liu ◽  
Yi-Ping Hsieh ◽  
Yun-Ruei Lee ◽  
...  

2003 ◽  
Vol 91 (9) ◽  
Author(s):  
Andreas Moser ◽  
Andreas Berger ◽  
David T. Margulies ◽  
Eric E. Fullerton

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