Electronic states of Ag thin films with a laterally periodic insertion of stacking faults

2010 ◽  
Vol 81 (15) ◽  
Author(s):  
Katsuyoshi Kobayashi ◽  
Takashi Uchihashi
Keyword(s):  
Thin Films ◽  
Stacking Faults ◽  
Electronic States

scholarly journals Detecting Electronic States at Stacking Faults in Magnetic Thin Films by Tunneling Spectroscopy

2000 ◽  
Vol 85 (20) ◽  
pp. 4365-4368 ◽  
Author(s):  
A. L. Vázquez de Parga ◽  
F. J. García-Vidal ◽  
R. Miranda
Keyword(s):  
Thin Films ◽  
Stacking Faults ◽  
Electronic States ◽  
Magnetic Thin Films ◽  
Tunneling Spectroscopy

The observation of nano-voids in Au thin films

1987 ◽  
Vol 45 ◽  
pp. 366-367
Author(s):  
William Krakow
Keyword(s):  
Thin Films ◽  
Melting Point ◽  
Present Author ◽  
Stacking Faults ◽  
Damage Threshold ◽  
Ionic Species ◽  
Rare Gases ◽  
Chain Defects ◽  
Vacancy Chains ◽  
Au Thin Films

It has long been known that defects such as stacking faults and voids can be quenched from various alloyed metals heated to near their melting point. Today it is common practice to irradiate samples with various ionic species of rare gases which also form voids containing solidified phases of the same atomic species, e.g. ref. 3. Equivalently, electron irradiation has been used to produce damage events, e.g. ref. 4. Generally all of the above mentioned studies have relied on diffraction contrast to observe the defects produced down to a dimension of perhaps 10 to 20Å. Also all these studies have used ions or electrons which exceeded the damage threshold for knockon events. In the case of higher resolution studies the present author has identified vacancy and interstitial type chain defects in ion irradiated Si and was able to identify both di-interstitial and di-vacancy chains running through the foil.

Organic–organic interfaces and unoccupied electronic states of thin films of perylene and naphthalene derivatives

2005 ◽  
Vol 744-747 ◽  
pp. 145-149 ◽  
Author(s):  
A.S. Komolov ◽  
P.J. Møller ◽  
Y.G. Aliaev ◽  
E.F. Lazneva ◽  
S. Akhremtchik ◽  
...  
Keyword(s):  
Thin Films ◽  
Electronic States ◽  
Naphthalene Derivatives ◽  
Organic Interfaces

Influence ofMgOoverlayers on the electronic states of bctCo(001)thin films grown on bccFe(001)∕GaAs(001)

2006 ◽  
Vol 73 (21) ◽  
Author(s):  
Liu-Niu Tong ◽  
Cai-Lian Deng ◽  
Frank Matthes ◽  
Martina Müller ◽  
Claus M. Schneider ◽  
...  
Keyword(s):  
Thin Films ◽  
Electronic States

Structural studies of diamond thin films grown from dc arc plasma

1997 ◽  
Vol 12 (10) ◽  
pp. 2533-2542 ◽  
Author(s):  
L. C. Nistor ◽  
J. Van Landuyt ◽  
V. G. Ralchenko ◽  
A. A. Smolin ◽  
K. G. Korotushenko ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Arc Discharge ◽  
Stacking Faults ◽  
Argon Laser ◽  
Arc Plasma ◽  
Structural Studies ◽  
Transmission Electron ◽  
Diamond Thin Films ◽  
Dc Arc

Diamond thin films grown from a dc-arc discharge in CH4/H2 mixtures on Si wafers were examined by transmission electron microscopy and Raman spectroscopy. This deposition method provides good diamond crystallinity at high CH4 concentrations (3%–9%). Seeding the substrate with 5 nm diamond particles at a density of 2 × 1012 cm−1 followed by argon laser irradiation to reduce their agglomeration gives, just after starting deposition, a density of growth centers of 1010cm−2. At 3% CH4 concentration the film grows with almost perfect crystallites. Richer CH4 mixtures (5% and 9%) produce crystallites with twins and stacking faults. An amorphous 20–70 nm SiC interlayer is present at these CH4 concentrations, which was not observed at 3% CH4. Amorphous sp3- and sp2-bonded carbon was detected by Raman spectroscopy at all CH4 concentrations and correlated with TEM data.

Molybdenum x-ray emission spectroscopic study of vacancy-induced electronic states in V2O5-MoO3 thin films and powders

2000 ◽  
Vol 29 (4) ◽  
pp. 279-284 ◽  
Author(s):  
B. S. Acharya ◽  
Rajeev ◽  
L. D. Pradhan ◽  
Pusparani Mishra ◽  
B. B. Nayak
Keyword(s):  
Thin Films ◽  
Spectroscopic Study ◽  
Electronic States ◽  
X Ray

scholarly journals Effects of Cr substitution on the magnetic and transport properties and electronic states ofSrRuO3epitaxial thin films

2015 ◽  
Vol 92 (11) ◽  
Author(s):  
Kaori Kurita ◽  
Akira Chikamatsu ◽  
Kei Shigematsu ◽  
Tsukasa Katayama ◽  
Hiroshi Kumigashira ◽  
...  
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Electronic States ◽  
Cr Substitution

Vibrational and Electronic Properties of RbC60 Thin Films

1994 ◽  
Vol 359 ◽  
Author(s):  
G.P. Lopinski ◽  
M.G. Mitch ◽  
J.R. Fox ◽  
J.S. Lannin
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Electronic States ◽  
Orthorhombic Phase ◽  
Low Energy ◽  
Polymer Model ◽  
In Situ Raman ◽  
Intramolecular Vibrations ◽  
Two Phases

ABSTRACTIn situ Raman scattering, UPS and HREELS measurements have been used to study the fcc to orthorhombic phase transition in RbC60 thin films. Large changes in the Raman spectra are interpreted in terms of increased interfullerene coupling in the orthorhombic phase. However, the data do not support the proposed polymer model for this phase. Photoemission measurements indicate only small differences in the electronic states between the two phases in contrast with photopolymerized C60 where additional states are observed. Low energy metallic-like excitations and screening of intramolecular vibrations are observed in HREELS.

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