scholarly journals Observation of “Ghost” Islands and Surfactant Effect of Surface Gallium Atoms during GaN Growth by Molecular Beam Epitaxy

2000 ◽  
Vol 85 (11) ◽  
pp. 2352-2355 ◽  
Author(s):  
L. X. Zheng ◽  
M. H. Xie ◽  
S. M. Seutter ◽  
S. H. Cheung ◽  
S. Y. Tong
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Surfactant Effect ◽  
Effect Of Surface

Surfactant Effect of Sb on GaInAs Quantum Dots Grown by Molecular Beam Epitaxy

2004 ◽  
Vol 43 (No. 5A) ◽  
pp. L605-L607 ◽  
Author(s):  
Tetsuya Matsuura ◽  
Tomoyuki Miyamoto ◽  
Takeo Kageyama ◽  
Masataka Ohta ◽  
Yasutaka Matsui ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Surfactant Effect

Formation of quantum dots by self-rearrangement of metastable 2D GaN

2002 ◽  
Vol 743 ◽  
Author(s):  
N. Gogneau ◽  
D. Jalabert ◽  
E. Monroy ◽  
C. Adelmann ◽  
B. Daudin.
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Plastic Relaxation ◽  
Surfactant Effect

ABSTRACTWe propose a new procedure to grow GaN quantum dots (QDs) on AlN by using the Ga surfactant effect in plasma-assisted molecular beam epitaxy. Self-formed GaN islands were spontaneously generated under vacuum from a GaN 2D layer grown under Ga-rich conditions. Island characteristics (size and density) are studied as a function of the GaN coverage. We demonstrate that the QD density can be controlled in the 1010 cm−2 to 2 × 1011 cm−2 range. It is shown that beyond a given GaN thickness there is a coexistence between elastic and plastic relaxation.

Sb surfactant effect on GaInAs/GaAs highly strained quantum well lasers emitting at 1200 nm range grown by molecular beam epitaxy

2004 ◽  
Vol 96 (1) ◽  
pp. 44-48 ◽  
Author(s):  
Takeo Kageyama ◽  
Tomoyuki Miyamoto ◽  
Masataka Ohta ◽  
Tetsuya Matsuura ◽  
Yasutaka Matsui ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Surfactant Effect ◽  
Strained Quantum Well ◽  
Highly Strained ◽  
Nm Range

Surfactant effect of gallium during molecular-beam epitaxy of GaN on AlN (0001)

2001 ◽  
Vol 64 (19) ◽  
Author(s):  
Guido Mula ◽  
C. Adelmann ◽  
S. Moehl ◽  
J. Oullier ◽  
B. Daudin
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Surfactant Effect

Effect of surface Ga accumulation on the growth of GaN by molecular beam epitaxy

2010 ◽  
Vol 7 (2) ◽  
pp. 342-346 ◽  
Author(s):  
Atsushi Kawaharazuka ◽  
Tadashi Yoshizaki ◽  
Takato Hiratsuka ◽  
Yoshiji Horikoshi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Effect Of Surface
Sign in / Sign up

Export Citation Format

Share Document