Surfactant effect of gallium during molecular-beam epitaxy of GaN on AlN (0001)

2001 ◽  
Vol 64 (19) ◽  
Author(s):  
Guido Mula ◽  
C. Adelmann ◽  
S. Moehl ◽  
J. Oullier ◽  
B. Daudin
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Surfactant Effect

Surfactant Effect of Sb on GaInAs Quantum Dots Grown by Molecular Beam Epitaxy

2004 ◽  
Vol 43 (No. 5A) ◽  
pp. L605-L607 ◽  
Author(s):  
Tetsuya Matsuura ◽  
Tomoyuki Miyamoto ◽  
Takeo Kageyama ◽  
Masataka Ohta ◽  
Yasutaka Matsui ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Surfactant Effect

Formation of quantum dots by self-rearrangement of metastable 2D GaN

2002 ◽  
Vol 743 ◽  
Author(s):  
N. Gogneau ◽  
D. Jalabert ◽  
E. Monroy ◽  
C. Adelmann ◽  
B. Daudin.
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Plastic Relaxation ◽  
Surfactant Effect

ABSTRACTWe propose a new procedure to grow GaN quantum dots (QDs) on AlN by using the Ga surfactant effect in plasma-assisted molecular beam epitaxy. Self-formed GaN islands were spontaneously generated under vacuum from a GaN 2D layer grown under Ga-rich conditions. Island characteristics (size and density) are studied as a function of the GaN coverage. We demonstrate that the QD density can be controlled in the 1010 cm−2 to 2 × 1011 cm−2 range. It is shown that beyond a given GaN thickness there is a coexistence between elastic and plastic relaxation.

Sb surfactant effect on GaInAs/GaAs highly strained quantum well lasers emitting at 1200 nm range grown by molecular beam epitaxy

2004 ◽  
Vol 96 (1) ◽  
pp. 44-48 ◽  
Author(s):  
Takeo Kageyama ◽  
Tomoyuki Miyamoto ◽  
Masataka Ohta ◽  
Tetsuya Matsuura ◽  
Yasutaka Matsui ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Surfactant Effect ◽  
Strained Quantum Well ◽  
Highly Strained ◽  
Nm Range

scholarly journals Observation of “Ghost” Islands and Surfactant Effect of Surface Gallium Atoms during GaN Growth by Molecular Beam Epitaxy

2000 ◽  
Vol 85 (11) ◽  
pp. 2352-2355 ◽  
Author(s):  
L. X. Zheng ◽  
M. H. Xie ◽  
S. M. Seutter ◽  
S. H. Cheung ◽  
S. Y. Tong
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Surfactant Effect ◽  
Effect Of Surface

Surfactant effect of In for AlGaN growth by plasma-assisted molecular beam epitaxy

2003 ◽  
Vol 93 (3) ◽  
pp. 1550-1556 ◽  
Author(s):  
E. Monroy ◽  
B. Daudin ◽  
E. Bellet-Amalric ◽  
N. Gogneau ◽  
D. Jalabert ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Surfactant Effect

Sb surfactant effect on highly strained GaInAs/GaAs quantum well grown by molecular beam epitaxy

2005 ◽  
Vol 278 (1-4) ◽  
pp. 521-525
Author(s):  
M. Ohta ◽  
T. Miyamoto ◽  
T. Kageyama ◽  
T. Matsuura ◽  
Y. Matsui ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Surfactant Effect ◽  
Highly Strained

Surfactant effect of gallium during the growth of GaN on AlN(0001¯) by plasma-assisted molecular beam epitaxy

2004 ◽  
Vol 85 (8) ◽  
pp. 1421-1423 ◽  
Author(s):  
N. Gogneau ◽  
E. Sarigiannidou ◽  
E. Monroy ◽  
S. Monnoye ◽  
H. Mank ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Surfactant Effect

Defects in Heavily-Doped MBE GaAs

1982 ◽  
Vol 40 ◽  
pp. 442-445
Author(s):  
C.B. Carter ◽  
D.M. DeSimone ◽  
T. Griem ◽  
C.E.C. Wood
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heavily Doped

Molecular-beam epitaxy (MBE) is potentially an extremely valuable tool for growing III-V compounds. The value of the technique results partly from the ease with which controlled layers of precisely determined composition can be grown, and partly from the ability that it provides for growing accurately doped layers.

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