scholarly journals Inverted Electron-Hole Alignment in InAs-GaAs Self-Assembled Quantum Dots

2000 ◽  
Vol 84 (4) ◽  
pp. 733-736 ◽  
Author(s):  
P. W. Fry ◽  
I. E. Itskevich ◽  
D. J. Mowbray ◽  
M. S. Skolnick ◽  
J. J. Finley ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electron Hole ◽  
Self Assembled

Non-inverted electron-hole alignment in InAs/InP self-assembled quantum dots

2009 ◽  
Vol 246 (4) ◽  
pp. 828-831 ◽  
Author(s):  
M. E. Reimer ◽  
D. Dalacu ◽  
J. Lapointe ◽  
P. J. Poole ◽  
W. R. McKinnon ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electron Hole ◽  
Self Assembled

Electron–hole symmetry breakings in optical fine structures of single self-assembled quantum dots

2010 ◽  
Vol 42 (4) ◽  
pp. 1155-1158
Author(s):  
Hanz Y. Ramirez ◽  
Chia-Hsien Lin ◽  
Wen Ting You ◽  
Shan-Yu Huang ◽  
Wen-Hao Chang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electron Hole ◽  
Fine Structures ◽  
Self Assembled ◽  
Symmetry Breakings

Piezoelectric Effects on the Electron-Hole Dipole in In0.5Ga0.5As/GaAs Self-Assembled Quantum Dots

2001 ◽  
Vol 224 (1) ◽  
pp. 37-40 ◽  
Author(s):  
A. Levin ◽  
A. Patan� ◽  
F. Schindler ◽  
A. Polimeni ◽  
L. Eaves ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electron Hole ◽  
Piezoelectric Effects ◽  
Self Assembled

Electron–hole complexes in self-assembled quantum dots in strong magnetic fields

2004 ◽  
Vol 21 (2-4) ◽  
pp. 211-214
Author(s):  
S.J Cheng ◽  
W Sheng ◽  
P Hawrylak ◽  
S Raymond ◽  
S Studenikin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Magnetic Fields ◽  
Electron Hole ◽  
Strong Magnetic Fields ◽  
Self Assembled

STARK SPECTROSCOPY OF Ge/Si(001) SELF-ASSEMBLED QUANTUM DOTS

2003 ◽  
Vol 02 (06) ◽  
pp. 505-510
Author(s):  
A. I. YAKIMOV ◽  
A. V. DVURECHENSKII ◽  
A. I. NIKIFOROV ◽  
V. V. ULYANOV ◽  
A. G. MILEKHIN ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Opposite Sign ◽  
Dipole Moments ◽  
Spatial Separation ◽  
Type Ii ◽  
Stark Spectroscopy ◽  
Electron Hole ◽  
The Mean ◽  
Self Assembled ◽  
Ge Nanocluster

Stark spectroscopy was employed to study interband optical transitions in an array of Ge / Si self-assembled quantum dots. The mean diameter and height of the Ge nanoclusters are about 6 nm and 4 nm, respectively. Under an applied electric field splitting of the exciton ground state is observed, implying that the dots possess two permanent dipole moments of opposite sign. We argue that the two possible orientations of the electron-hole dipole in each Ge dot are the result of the spatial separation of electrons which can be excited in Si as well as on top and below the Ge nanocluster. The separation of electron and hole is determined to be (5.1±0.2) nm for the top (apex) electron, and (0.8±0.3) nm for the bottom (base) electron, yielding a distance between the electrons of (5.9±0.5) nm, which is consistent with the staggered band line-up inherent to type-II quantum dots.

The Stark Effect and Electron-Hole Wavefunctions in InAs-GaAs Self-Assembled Quantum Dots

2000 ◽  
pp. 337-346
Author(s):  
M. S. Skolnick ◽  
P. W. Fry ◽  
I. E. Itskevich ◽  
D. J. Mowbray ◽  
J. A. Barker ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Stark Effect ◽  
Electron Hole ◽  
Self Assembled

Electron-hole transitions in self-assembled InAs/GaAs quantum dots: Effects of applied magnetic fields and hydrostatic pressure

2005 ◽  
Vol 36 (3-6) ◽  
pp. 231-233 ◽  
Author(s):  
C.A. Duque ◽  
N. Porras-Montenegro ◽  
Z. Barticevic ◽  
M. Pacheco ◽  
L.E. Oliveira
Keyword(s):  
Quantum Dots ◽  
Hydrostatic Pressure ◽  
Magnetic Fields ◽  
Electron Hole ◽  
Self Assembled

Nanostructure of semiconductor quantum dots in a borosilicate glass matrix by complementary use of HREM and AEM

1990 ◽  
Vol 48 (4) ◽  
pp. 728-729
Author(s):  
M.J. Kim ◽  
L.C. Liu ◽  
S.H. Risbud ◽  
R.W. Carpenter
Keyword(s):  
Quantum Dots ◽  
Borosilicate Glass ◽  
Glass Matrix ◽  
Optical Switching ◽  
Response Times ◽  
Fast Response ◽  
Processing Technique ◽  
Internal Stresses ◽  
Electron Hole ◽  
Spatial Dimensions

When the size of a semiconductor is reduced by an appropriate materials processing technique to a dimension less than about twice the radius of an exciton in the bulk crystal, the band like structure of the semiconductor gives way to discrete molecular orbital electronic states. Clusters of semiconductors in a size regime lower than 2R {where R is the exciton Bohr radius; e.g. 3 nm for CdS and 7.3 nm for CdTe) are called Quantum Dots (QD) because they confine optically excited electron- hole pairs (excitons) in all three spatial dimensions. Structures based on QD are of great interest because of fast response times and non-linearity in optical switching applications.In this paper we report the first HREM analysis of the size and structure of CdTe and CdS QD formed by precipitation from a modified borosilicate glass matrix. The glass melts were quenched by pouring on brass plates, and then annealed to relieve internal stresses. QD precipitate particles were formed during subsequent "striking" heat treatments above the glass crystallization temperature, which was determined by differential thermal analysis.

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