Erratum to “Electron-hole symmetry breakings in optical fine structures of single self-assembled quantum dots” [Physica E: Low-dimensional systems and nanostructures 42 (2010) 1155]

2010 ◽  
Vol 43 (1) ◽  
pp. 567-568
Author(s):  
Hanz Y. Ramirez ◽  
Chia-Hsien Lin ◽  
Wen Ting You ◽  
Shan-Yu Huang ◽  
Wen-Hao Chang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electron Hole ◽  
Fine Structures ◽  
Self Assembled ◽  
Low Dimensional ◽  
Symmetry Breakings

Electron–hole symmetry breakings in optical fine structures of single self-assembled quantum dots

2010 ◽  
Vol 42 (4) ◽  
pp. 1155-1158
Author(s):  
Hanz Y. Ramirez ◽  
Chia-Hsien Lin ◽  
Wen Ting You ◽  
Shan-Yu Huang ◽  
Wen-Hao Chang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electron Hole ◽  
Fine Structures ◽  
Self Assembled ◽  
Symmetry Breakings

Optical fine structures of highly quantized InGaAs/GaAs self-assembled quantum dots

2010 ◽  
Vol 81 (24) ◽  
Author(s):  
H. Y. Ramirez ◽  
C. H. Lin ◽  
C. C. Chao ◽  
Y. Hsu ◽  
W. T. You ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Fine Structures ◽  
Self Assembled

scholarly journals Inverted Electron-Hole Alignment in InAs-GaAs Self-Assembled Quantum Dots

2000 ◽  
Vol 84 (4) ◽  
pp. 733-736 ◽  
Author(s):  
P. W. Fry ◽  
I. E. Itskevich ◽  
D. J. Mowbray ◽  
M. S. Skolnick ◽  
J. J. Finley ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electron Hole ◽  
Self Assembled

Non-inverted electron-hole alignment in InAs/InP self-assembled quantum dots

2009 ◽  
Vol 246 (4) ◽  
pp. 828-831 ◽  
Author(s):  
M. E. Reimer ◽  
D. Dalacu ◽  
J. Lapointe ◽  
P. J. Poole ◽  
W. R. McKinnon ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electron Hole ◽  
Self Assembled

Piezoelectric Effects on the Electron-Hole Dipole in In0.5Ga0.5As/GaAs Self-Assembled Quantum Dots

2001 ◽  
Vol 224 (1) ◽  
pp. 37-40 ◽  
Author(s):  
A. Levin ◽  
A. Patan� ◽  
F. Schindler ◽  
A. Polimeni ◽  
L. Eaves ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electron Hole ◽  
Piezoelectric Effects ◽  
Self Assembled

Electron–hole complexes in self-assembled quantum dots in strong magnetic fields

2004 ◽  
Vol 21 (2-4) ◽  
pp. 211-214
Author(s):  
S.J Cheng ◽  
W Sheng ◽  
P Hawrylak ◽  
S Raymond ◽  
S Studenikin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Magnetic Fields ◽  
Electron Hole ◽  
Strong Magnetic Fields ◽  
Self Assembled

RECOMBINATION PROCESSES IN SYSTEMS BASED ON IONIC CRYSTALS WITH EMBEDDED SELF-ORGANIZED NANOCRYSTALS

2007 ◽  
Vol 06 (05) ◽  
pp. 311-314 ◽  
Author(s):  
N. G. ROMANOV ◽  
A. G. BADALYAN ◽  
D. O. TOLMACHEV ◽  
V. L. PREOBRAZHENSKI ◽  
P. G. BARANOV ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Crystal Lattice ◽  
The Self ◽  
Ionic Crystals ◽  
Electron Hole ◽  
Self Organized ◽  
Recombination Processes ◽  
Low Dimensional ◽  
Hole Centers ◽  
Hole Recombination

The recombination processes leading to tunneling afterglow and photostimulated luminescence were studied in systems based on ionic host crystals with low-dimensional structures (semiconductor quantum dots) formed as a result of the self-organized growth. The systems of AgBr nanocrystals embedded into the KBr crystal lattice and CsPbBr 3 nanocrystals embedded into the CsBr crystal lattice were investigated. The energy of electron–hole recombination in matrices was shown to transfer to quantum dots. To identify the structure of recombining electron and hole centers, magnetic resonance detected optically by monitoring the tunneling afterglow was used.

STARK SPECTROSCOPY OF Ge/Si(001) SELF-ASSEMBLED QUANTUM DOTS

2003 ◽  
Vol 02 (06) ◽  
pp. 505-510
Author(s):  
A. I. YAKIMOV ◽  
A. V. DVURECHENSKII ◽  
A. I. NIKIFOROV ◽  
V. V. ULYANOV ◽  
A. G. MILEKHIN ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Opposite Sign ◽  
Dipole Moments ◽  
Spatial Separation ◽  
Type Ii ◽  
Stark Spectroscopy ◽  
Electron Hole ◽  
The Mean ◽  
Self Assembled ◽  
Ge Nanocluster

Stark spectroscopy was employed to study interband optical transitions in an array of Ge / Si self-assembled quantum dots. The mean diameter and height of the Ge nanoclusters are about 6 nm and 4 nm, respectively. Under an applied electric field splitting of the exciton ground state is observed, implying that the dots possess two permanent dipole moments of opposite sign. We argue that the two possible orientations of the electron-hole dipole in each Ge dot are the result of the spatial separation of electrons which can be excited in Si as well as on top and below the Ge nanocluster. The separation of electron and hole is determined to be (5.1±0.2) nm for the top (apex) electron, and (0.8±0.3) nm for the bottom (base) electron, yielding a distance between the electrons of (5.9±0.5) nm, which is consistent with the staggered band line-up inherent to type-II quantum dots.

The Stark Effect and Electron-Hole Wavefunctions in InAs-GaAs Self-Assembled Quantum Dots

2000 ◽  
pp. 337-346
Author(s):  
M. S. Skolnick ◽  
P. W. Fry ◽  
I. E. Itskevich ◽  
D. J. Mowbray ◽  
J. A. Barker ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Stark Effect ◽  
Electron Hole ◽  
Self Assembled
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