Surface Structure of GaN(0001) in the Chemical Vapor Deposition Environment

1999 ◽  
Vol 83 (4) ◽  
pp. 741-744 ◽  
Author(s):  
A. Munkholm ◽  
G. B. Stephenson ◽  
J. A. Eastman ◽  
C. Thompson ◽  
P. Fini ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Surface Structure ◽  
Vapor Deposition ◽  
Chemical Vapor

Real-Time X-Ray Scattering Studies of Surface Structure During Metalorganic Chemical Vapor Deposition of GaN

MRS Bulletin ◽  
1999 ◽  
Vol 24 (1) ◽  
pp. 21-25 ◽  
Author(s):  
G. Brian Stephenson ◽  
Jeffrey A. Eastman ◽  
Orlando Auciello ◽  
Anneli Munkholm ◽  
Carol Thompson ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Surface Structure ◽  
Real Time ◽  
Vapor Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
X Rays ◽  
Production Scale ◽  
X Ray

Vapor-phase processes such as chemical vapor deposition (CVD) and reactive ion etching are the primary methods for the production-scale synthesis and processing of many high-quality thin-film materials. For example, these processes are widely used in the microelectronics industry for synthesis and lithography of the various semiconducting, insulating, and conducting layers in devices. Understanding the means of controlling the microstructure and composition of these materials is of great technological interest. However a difficulty often encountered in developing vapor-phase processes is an undesirable dependence on trial-and-error methods for optimizing the many process parameters. These parameters include gas composition, flow rate, pressure, and substrate temperature, all of which are typically changing with time. This reliance on empirical methods can be attributed to the tremendous chemical and physical complexity of vapor-phase processes and the lack of appropriate in situ measurement techniques for the vapor-phase environment.We have initiated a program to apply synchrotron x-ray analysis techniques as real-time probes of film and surface structure during vapor-phase processing. X-rays have a combination of properties which makes them particularly well-suited for these studies. Unlike electrons, x-rays have a sufficiently low absorption to penetrate vapor-phase processing environments and chamber walls. Unlike visible light, x-rays have wavelengths and energies suitable for study of atomic-scale structure and chemistry. A growing number of in situ synchrotron x-ray investigations of film growth and processing demonstrate the power of these techniques.

Evolution of the Surface Structure of CVD Tungsten During Annealing

1995 ◽  
Vol 403 ◽  
Author(s):  
C. L. Briant ◽  
R. H. Wilson ◽  
L. Bigio ◽  
W. G. Morris
Keyword(s):  
Chemical Vapor Deposition ◽  
Surface Structure ◽  
Rough Surface ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Tungsten Ribbon ◽  
Tungsten Surface

AbstractThis paper reports a study in which a rough tungsten surface was prepared by chemical vapor deposition of tungsten on a tungsten ribbon. The samples were then heated to study the smoothing behavior of the rough surface. The results show that at 1600°C the surface becomes smooth after approximately five to ten hours. At 2400°C the surface becomes smooth within 15 minutes.

scholarly journals Analyses of the surface parameters in polycrystalline diamonds

2020 ◽  
Vol 17 (1) ◽  
pp. 111-129
Author(s):  
Sandra Veljkovic ◽  
Vojislav Mitic ◽  
Vesna Paunovic ◽  
Goran Lazovic ◽  
Markus Mohr ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Surface Structure ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method ◽  
Polycrystalline Films ◽  
Surface Parameters ◽  
Insight Into

There is a progressing interests for polycrystalline diamonds and they have been more extensively used recently. This area has been intensively researched due to the outstanding potential of this material, and this necessitated presenting some of the latest application related to engineering in this paper. A better insight of polycrystalline diamonds properties can be achieved by intensively researching the surface structure. Samples of nanocrystalline diamonds grown by the chemical vapor deposition method are analyzed and accordingly, the focus of the research was the surface parameters and their structure. It is observed that waviness and texture are unique for any direction, their values are almost the same for the chosen directions and they vary approximately from -0.2 nm to 0.4 nm. Analyses of the parameters allowed a more detailed insight into the morphology of the surfaces of polycrystalline films.

Effect of Pressures on the Chemical Vapor Deposition of BN Using Borazine

2011 ◽  
Vol 214 ◽  
pp. 588-592
Author(s):  
Jun Sheng Li ◽  
Chang Rui Zhang ◽  
Bin Li ◽  
Feng Cao ◽  
Si Qing Wang
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Surface Structure ◽  
Vapor Deposition ◽  
Total Pressure ◽  
Chemical Vapor ◽  
Xrd Analysis ◽  
Composition And Structure ◽  
Single Precursor ◽  
Surface Morphologies

Boron nitride coatings have been prepared by chemical vapor deposition using borazine as single precursor at 900 °C. The effect of the total pressure on the surface morphologies of the coatings was investigated. For low total pressures (≤ 3 kPa), the deposits presents a compact pebble-like surface structure. However, when high total pressures (> 3 kPa) were used, the surface of the coatings presents a loose grain-like feature. When the total pressure increases up to 12 kPa, the coatings shows a porous surface structure. The composition and structure of the deposited coatings were investigated by means of FTIR and XRD analysis. It shows that the coatings have a structure of turbostratic boron nitride.

Surface Structure and Photocatalytic Properties of Bi2WO6 Nanoplatelets Modified by Molybdena Islands from Chemical Vapor Deposition

2016 ◽  
Vol 120 (32) ◽  
pp. 18191-18200 ◽  
Author(s):  
Arne Dittmer ◽  
Jasper Menze ◽  
Bastian Mei ◽  
Jennifer Strunk ◽  
Henry S. Luftman ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Surface Structure ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Photocatalytic Properties

In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

1995 ◽  
Vol 53 ◽  
pp. 256-257
Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Effect ◽  
Line Drawing ◽  
Chemical Vapor ◽  
Environmental Cell ◽  
Engineering Changes ◽  
Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

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