The role of atomic surface structure in the metalorganic chemical vapor deposition of III-V compound semiconductors

2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-31-Pr3-37
Author(s):  
R. F. Hicks ◽  
Q. Fu ◽  
L. Li ◽  
S. B. Visbeck ◽  
Y. Sun ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Surface Structure ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Compound Semiconductors ◽  
Atomic Surface ◽  
Metalorganic Chemical

The role of the substrate in photoenhanced metalorganic chemical vapor deposition

1995 ◽  
Vol 66 (3) ◽  
pp. 296-298 ◽  
Author(s):  
E. Maayan ◽  
O. Kreinin ◽  
D. Veinger ◽  
A. Thon ◽  
G. Bahir ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Metalorganic Chemical

Lateral polarity heterostructures by overgrowth of patterned AlxGa1-xN nucleation layers

2000 ◽  
Vol 622 ◽  
Author(s):  
R. Dimitrov ◽  
V. Tilak ◽  
M. Murphy ◽  
W.J. Schaff ◽  
L.F. Eastman ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Structural And Electrical Properties ◽  
Metalorganic Chemical

ABSTRACTIn this study thin AlxGa1−xN nucleation layers on sapphire were patterned and overgrown by plasma-induced molecular beam epitaxy (PIMBE) and metalorganic chemical vapor deposition (MOCVD) to obtain adjacent regions of GaN and AlGaN/GaN heterostructures with different polarities. The role of polarity on the structural and electrical properties of epitaxial layers and AlGaN/GaN heterostructures was investigated for samples grown on patterned AlN or GaN nucleation layers. Epitaxial GaN and AlGaN/GaN heterostructures grown on Al-face AlN or N- face GaN nucleation layers were found to be Ga-face or N-face, respectively, independent of the technique used for the overgrowth.

scholarly journals Metalorganic chemical vapor deposition of InN quantum dots and nanostructures

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Caroline E. Reilly ◽  
Stacia Keller ◽  
Shuji Nakamura ◽  
Steven P. DenBaars
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Chemical Vapor ◽  
Electromagnetic Spectrum ◽  
Material System ◽  
Metalorganic Chemical

AbstractUsing one material system from the near infrared into the ultraviolet is an attractive goal, and may be achieved with (In,Al,Ga)N. This III-N material system, famous for enabling blue and white solid-state lighting, has been pushing towards longer wavelengths in more recent years. With a bandgap of about 0.7 eV, InN can emit light in the near infrared, potentially overlapping with the part of the electromagnetic spectrum currently dominated by III-As and III-P technology. As has been the case in these other III–V material systems, nanostructures such as quantum dots and quantum dashes provide additional benefits towards optoelectronic devices. In the case of InN, these nanostructures have been in the development stage for some time, with more recent developments allowing for InN quantum dots and dashes to be incorporated into larger device structures. This review will detail the current state of metalorganic chemical vapor deposition of InN nanostructures, focusing on how precursor choices, crystallographic orientation, and other growth parameters affect the deposition. The optical properties of InN nanostructures will also be assessed, with an eye towards the fabrication of optoelectronic devices such as light-emitting diodes, laser diodes, and photodetectors.

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