Coherent Control of Electron-LO-Phonon Scattering in Bulk GaAs

1998 ◽  
Vol 80 (9) ◽  
pp. 1992-1995 ◽  
Author(s):  
M. U. Wehner ◽  
M. H. Ulm ◽  
D. S. Chemla ◽  
M. Wegener
Keyword(s):  
Coherent Control ◽  
Phonon Scattering ◽  
Bulk Gaas

Coherent control of an optically injected ballistic spin-polarized current in bulk GaAs

2002 ◽  
Vol 91 (7) ◽  
pp. 4382-4386 ◽  
Author(s):  
Martin J. Stevens ◽  
Arthur L. Smirl ◽  
R. D. R. Bhat ◽  
J. E. Sipe ◽  
H. M. van Driel
Keyword(s):  
Coherent Control ◽  
Bulk Gaas ◽  
Spin Polarized ◽  
Ballistic Spin

scholarly journals Crystallographic Orientation Effect On Hole Polar Optical Phonon Scattering Rates in Thin Gaas/Alxga1-Xas Quantum Wells

2019 ◽  
Author(s):  
Mohamed Boumaza
Keyword(s):  
Quantum Wells ◽  
Optical Phonon ◽  
Phonon Scattering ◽  
Strain Effect ◽  
Polar Optical Phonon ◽  
Phonon Modes ◽  
Bulk Gaas ◽  
Hole Energy ◽  
Optical Phonon Scattering ◽  
Scattering Rates

We report on hole polar optical phonon scattering processes in thin GaAs/AlxGa1-xAs quantum wells grown in various crystallographic directions, such as [001], [110]. Using the dielectric continuum model we focus on how the different scattering processes of holes with interface phonon modes depend on the initial hole energy. In our work, we use the Luttinger-Kohn (LK) 6×6 k.p Hamiltonian with the envelope function approximation, from which we compute numerically the electronic structure of holes for a thin quantum well sustaining only one bound state for each type of hole. Due to mixing between the heavy, light, and split off bands, hole subbands exhibit strong nonparabolicity and important warping that have their word to say on physical properties. Detailed and extensive calculations that the rates for intra-subband scattering processes differ significantly from those of bulk GaAs because of quantization and reduced dimensionality. Moreover, the study of scattering as a function of hole energy shows that the trend of the scattering rates is governed mostly by i) overlap integrals and ii) the density of the final states to which the hole scatters. The influence of warping, in the hole energy dispersion, on the phonon scattering rates is also explored and found to be important when the initial hole energy is high. Our calculations show evidence of strong anisotropy in the scattering rates especially for processes involving the heavy hole subband, which anisotropy is in fact quite important and far from being negligible. However, strain effect can reduce scattering rates.

Photoluminescence study of exciton–optical phonon scattering in bulk GaAs and GaAs quantum wells

2000 ◽  
Vol 87 (4) ◽  
pp. 1858-1862 ◽  
Author(s):  
A. Venu Gopal ◽  
Rajesh Kumar ◽  
A. S. Vengurlekar ◽  
A. Bosacchi ◽  
S. Franchi ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Phonon ◽  
Phonon Scattering ◽  
Bulk Gaas ◽  
Photoluminescence Study ◽  
Optical Phonon Scattering

Towards quantitative simulations of inelastic electron diffraction patterns and images

1992 ◽  
Vol 50 (2) ◽  
pp. 1170-1171
Author(s):  
Z. L. Wang
Keyword(s):  
Phonon Scattering ◽  
Incident Beam ◽  
Dynamical Theory ◽  
Inelastic Electron ◽  
Additional Advantage ◽  
Coupled Equations ◽  
Atomic Vibrations ◽  
Diffraction Patterns ◽  
Primary Advantage ◽  
The One

A new dynamical theory has been developed based on Yoshioka's coupled equations for describing inelastic electron scattering in thin crystals. Compared to existing theories, the primary advantage of this theory is that the incoherent summation of the diffracted intensities contributed by electrons after exciting vast numbers of different excited states has been evaluated before any numerical calculation. An additional advantage is that the phase correlations of atomic vibrations are considered, so that full lattice dynamics can be combined in the phonon scattering calculation. The new theory has been proven to be equivalent to the inelastic multislice theory, and has been applied to calculate energy-filtered diffraction patterns and images formed by phonon, single electron and valence scattered electrons.A calculated diffraction pattern of elastic and phonon scattered electrons for a parallel incident beam case is in agreement with the one observed (Fig. 1), showing thermal diffuse scattering (TDS) streaks and Kikuchi pattern.

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