Photoluminescence study of exciton–optical phonon scattering in bulk GaAs and GaAs quantum wells

2000 ◽  
Vol 87 (4) ◽  
pp. 1858-1862 ◽  
Author(s):  
A. Venu Gopal ◽  
Rajesh Kumar ◽  
A. S. Vengurlekar ◽  
A. Bosacchi ◽  
S. Franchi ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Phonon ◽  
Phonon Scattering ◽  
Bulk Gaas ◽  
Photoluminescence Study ◽  
Optical Phonon Scattering

scholarly journals Crystallographic Orientation Effect On Hole Polar Optical Phonon Scattering Rates in Thin Gaas/Alxga1-Xas Quantum Wells

2019 ◽  
Author(s):  
Mohamed Boumaza
Keyword(s):  
Quantum Wells ◽  
Optical Phonon ◽  
Phonon Scattering ◽  
Strain Effect ◽  
Polar Optical Phonon ◽  
Phonon Modes ◽  
Bulk Gaas ◽  
Hole Energy ◽  
Optical Phonon Scattering ◽  
Scattering Rates

We report on hole polar optical phonon scattering processes in thin GaAs/AlxGa1-xAs quantum wells grown in various crystallographic directions, such as [001], [110]. Using the dielectric continuum model we focus on how the different scattering processes of holes with interface phonon modes depend on the initial hole energy. In our work, we use the Luttinger-Kohn (LK) 6×6 k.p Hamiltonian with the envelope function approximation, from which we compute numerically the electronic structure of holes for a thin quantum well sustaining only one bound state for each type of hole. Due to mixing between the heavy, light, and split off bands, hole subbands exhibit strong nonparabolicity and important warping that have their word to say on physical properties. Detailed and extensive calculations that the rates for intra-subband scattering processes differ significantly from those of bulk GaAs because of quantization and reduced dimensionality. Moreover, the study of scattering as a function of hole energy shows that the trend of the scattering rates is governed mostly by i) overlap integrals and ii) the density of the final states to which the hole scatters. The influence of warping, in the hole energy dispersion, on the phonon scattering rates is also explored and found to be important when the initial hole energy is high. Our calculations show evidence of strong anisotropy in the scattering rates especially for processes involving the heavy hole subband, which anisotropy is in fact quite important and far from being negligible. However, strain effect can reduce scattering rates.

Electron-Phonon Scattering in GaN/AlN and GaAs/AlAs Quantum Wells

1997 ◽  
Vol 482 ◽  
Author(s):  
T. F. Forbang ◽  
C. R. McIntyre
Keyword(s):  
Quantum Wells ◽  
Optical Phonon ◽  
Phonon Spectrum ◽  
Phonon Scattering ◽  
Relaxation Times ◽  
Longitudinal Optical ◽  
Longitudinal Optical Phonon ◽  
Phonon Modes ◽  
Optical Phonon Scattering ◽  
Electron Phonon Scattering

AbstractWe have studied the effects on the phonon spectrum and on the electron-longitudinal optical phonon scattering in GaN/AlN and GaAs/AlAs quantum wells. Phonon modes and potentials have been calculated for both systems. Results for emission due to electroninterface phonons interactions are presented. We will discuss the implications for relaxation times and electron mobility due to modified LO-phonon scattering in both systems.

Reduction of inelastic longitudinal-optical phonon scattering in narrow polar-semiconductor quantum wells

1992 ◽  
Author(s):  
Michael A. Stroscio ◽  
Ki Wook Kim ◽  
Amit R. Bhatt ◽  
Gerald J. Iafrate ◽  
Mitra B. Dutta ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Phonon ◽  
Phonon Scattering ◽  
Longitudinal Optical ◽  
Longitudinal Optical Phonon ◽  
Semiconductor Quantum Wells ◽  
Optical Phonon Scattering
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