Scaling Behavior of Anisotropic Organic Thin Films Grown in High Vacuum

1997 ◽  
Vol 78 (12) ◽  
pp. 2389-2392 ◽  
Author(s):  
F. Biscarini ◽  
P. Samorí ◽  
O. Greco ◽  
R. Zamboni
Author(s):  
S.R. Forrest ◽  
P.E. Burrows ◽  
V. Bulovic ◽  
E. Haskel ◽  
Z. Shen ◽  
...  

Materials ◽  
2021 ◽  
Vol 14 (23) ◽  
pp. 7247
Author(s):  
Youngkwan Yoon ◽  
Jinho Lee ◽  
Seulgi Lee ◽  
Soyoung Kim ◽  
Hee Cheul Choi

Organic thin films with smooth surfaces are mandated for high-performance organic electronic devices. Abrupt nucleation and aggregation during film formation are two main factors that forbid smooth surfaces. Here, we report a simple fast cooling (FC) adapted physical vapor deposition (FCPVD) method to produce ultrasmooth organic thin films through effectively suppressing the aggregation of adsorbed molecules. We have found that thermal energy control is essential for the spread of molecules on a substrate by diffusion and it prohibits the unwanted nucleation of adsorbed molecules. FCPVD is employed for cooling the horizontal tube-type organic vapor deposition setup to effectively remove thermal energy applied to adsorbed molecules on a substrate. The organic thin films prepared using the FCPVD method have remarkably ultrasmooth surfaces with less than 0.4 nm root mean square (RMS) roughness on various substrates, even in a low vacuum, which is highly comparable to the ones prepared using conventional high-vacuum deposition methods. Our results provide a deeper understanding of the role of thermal energy employed to substrates during organic film growth using the PVD process and pave the way for cost-effective and high-performance organic devices.


2008 ◽  
Vol 1091 ◽  
Author(s):  
Marco Stella ◽  
Fernando Villar ◽  
Fredy Enrique Rojas ◽  
Mónica Della Pirriera ◽  
Cristobal Voz ◽  
...  

AbstractThe organic photovoltaic technology has developed much in the last few years thanks to the optimization of the solar cell geometry and, specially, to the research for new performing materials. Nevertheless, much work has still to be done in order to better know the real mechanisms regulating the function of such novel class of semiconductors. The study of thin-film micro-structure, and the influence of the deposition parameters on it, is an important issue in order to obtain best optical and electrical properties. Thermal evaporation in high-vacuum chambers is the more suitable deposition technique to obtain organic thin-films with well organize molecular structure. Deposition parameters such as the substrate temperature and deposition rate may have some important effect on the molecules ordering. In this paper the effects of substrate temperature on structural and optical properties have been studied for N,N′-ditridecyl perylene diimide (PTCDI-C13) thin-films. Four samples have been deposited at 30, 60, 90 and 120°C substrate temperature and their absorption has been investigated by photothermal deflection spectroscopy (PDS) and transmittance spectroscopy. Moreover, simulations of the transmittance spectra have been calculated in order to obtain the optical constants n and k. Finally atomic force microscopy (AFM) has been employed to analyze the superficial morphology of the thin-films.


Author(s):  
C. Ewins ◽  
J.R. Fryer

The preparation of thin films of organic molecules is currently receiving much attention because of the need to produce good quality thin films for molecular electronics. We have produced thin films of the polycyclic aromatic, perylene C10H12 by evaporation under high vacuum onto a potassium chloride (KCl) substrate. The role of substrate temperature in determining the morphology and crystallography of the films was then investigated by transmission electron microscopy (TEM).The substrate studied was the (001) face of a freshly cleaved crystal of KCl. The temperature of the KCl was controlled by an electric heater or a cold finger. The KCl was heated to 200°C under a vacuum of 10-6 torr and allowed to cool to the desired temperature. The perylene was then evaporated over a period of one minute from a molybdenum boat at a distance of 10cm from the KCl. The perylene thin film was then backed with an amorphous layer of carbon and floated onto copper microscope grids.


Author(s):  
Pamela F. Lloyd ◽  
Scott D. Walck

Pulsed laser deposition (PLD) is a novel technique for the deposition of tribological thin films. MoS2 is the archetypical solid lubricant material for aerospace applications. It provides a low coefficient of friction from cryogenic temperatures to about 350°C and can be used in ultra high vacuum environments. The TEM is ideally suited for studying the microstructural and tribo-chemical changes that occur during wear. The normal cross sectional TEM sample preparation method does not work well because the material’s lubricity causes the sandwich to separate. Walck et al. deposited MoS2 through a mesh mask which gave suitable results for as-deposited films, but the discontinuous nature of the film is unsuitable for wear-testing. To investigate wear-tested, room temperature (RT) PLD MoS2 films, the sample preparation technique of Heuer and Howitt was adapted.Two 300 run thick films were deposited on single crystal NaCl substrates. One was wear-tested on a ball-on-disk tribometer using a 30 gm load at 150 rpm for one minute, and subsequently coated with a heavy layer of evaporated gold.


2020 ◽  
Vol 13 (4) ◽  
pp. 866-872
Author(s):  
HAO Ya-ru ◽  
◽  
◽  
DENG Zhao-qi

1990 ◽  
Vol 43 (5) ◽  
pp. 583
Author(s):  
GL Price

Recent developments in the growth of semiconductor thin films are reviewed. The emphasis is on growth by molecular beam epitaxy (MBE). Results obtained by reflection high energy electron diffraction (RHEED) are employed to describe the different kinds of growth processes and the types of materials which can be constructed. MBE is routinely capable of heterostructure growth to atomic precision with a wide range of materials including III-V, IV, II-VI semiconductors, metals, ceramics such as high Tc materials and organics. As the growth proceeds in ultra high vacuum, MBE can take advantage of surface science techniques such as Auger, RHEED and SIMS. RHEED is the essential in-situ probe since the final crystal quality is strongly dependent on the surface reconstruction during growth. RHEED can also be used to calibrate the growth rate, monitor growth kinetics, and distinguish between various growth modes. A major new area is lattice mismatched growth where attempts are being made to construct heterostructures between materials of different lattice constants such as GaAs on Si. Also described are the new techniques of migration enhanced epitaxy and tilted superlattice growth. Finally some comments are given On the means of preparing large area, thin samples for analysis by other techniques from MBE grown films using capping, etching and liftoff.


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