Supersonic Ionization Wave Driven by Radiation Transport in a Short-Pulse Laser-Produced Plasma

1996 ◽  
Vol 77 (3) ◽  
pp. 498-501 ◽  
Author(s):  
T. Ditmire ◽  
E. T. Gumbrell ◽  
R. A. Smith ◽  
L. Mountford ◽  
M. H. R. Hutchinson
Keyword(s):  
Pulse Laser ◽  
Radiation Transport ◽  
Short Pulse ◽  
Ionization Wave ◽  
Short Pulse Laser ◽  
Laser Produced Plasma

Short-pulse laser-produced plasma from C60 molecules

1995 ◽  
Author(s):  
Cornelius Wülker ◽  
Wolfgang Theobald ◽  
Donald Ouw ◽  
Fritz P. Schäfer ◽  
Boris N. Chichkov
Keyword(s):  
Pulse Laser ◽  
Short Pulse ◽  
Short Pulse Laser ◽  
Laser Produced Plasma

Short-pulse laser-produced plasma from C60 molecules

1994 ◽  
Vol 112 (1-2) ◽  
pp. 21-28 ◽  
Author(s):  
Cornelius Wülker ◽  
Wolfgang Theobald ◽  
Donald Ouw ◽  
Fritz P. Schäfer ◽  
Boris N. Chichkov
Keyword(s):  
Pulse Laser ◽  
Short Pulse ◽  
Short Pulse Laser ◽  
Laser Produced Plasma

High-power short-pulse laser modules for laser-produced-plasma EUV source

2004 ◽  
Author(s):  
Samir Ellwi ◽  
Andrew Comley ◽  
N. Hay ◽  
Michael Brownell
Keyword(s):  
Pulse Laser ◽  
High Power ◽  
Short Pulse ◽  
Short Pulse Laser ◽  
Laser Produced Plasma

Silicon Thinning using Ultra-Short Pulse Laser Ablation

2004 ◽  
Author(s):  
F. Beaudoin ◽  
P. Perdu ◽  
C. DeNardi ◽  
R. Desplats ◽  
J. Lopez ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Sample Preparation ◽  
Pulse Laser ◽  
Pulse Laser Ablation ◽  
Short Pulse ◽  
Special Care ◽  
Short Pulse Laser ◽  
Ultra Short Pulse ◽  
Ultra Short Pulse Laser

Abstract Ultra-short pulse laser ablation is applied to IC backside sample preparation. It is contact-less, non-thermal, precise and can ablate the various types of material present in IC packages. This study concerns the optimization of ultra-short pulse laser ablation for silicon thinning. Uncontrolled silicon roughness and poor uniformity of the laser thinned cavity needed to be tackled. Special care is taken to minimize the silicon RMS roughness to less than 1µm. Application to sample preparation of 256Mbit devices is presented.

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