Short-pulse laser-produced plasma from C60 molecules

1995 ◽  
Author(s):  
Cornelius Wülker ◽  
Wolfgang Theobald ◽  
Donald Ouw ◽  
Fritz P. Schäfer ◽  
Boris N. Chichkov
1994 ◽  
Vol 112 (1-2) ◽  
pp. 21-28 ◽  
Author(s):  
Cornelius Wülker ◽  
Wolfgang Theobald ◽  
Donald Ouw ◽  
Fritz P. Schäfer ◽  
Boris N. Chichkov

2004 ◽  
Author(s):  
Samir Ellwi ◽  
Andrew Comley ◽  
N. Hay ◽  
Michael Brownell

1996 ◽  
Vol 77 (3) ◽  
pp. 498-501 ◽  
Author(s):  
T. Ditmire ◽  
E. T. Gumbrell ◽  
R. A. Smith ◽  
L. Mountford ◽  
M. H. R. Hutchinson

Author(s):  
F. Beaudoin ◽  
P. Perdu ◽  
C. DeNardi ◽  
R. Desplats ◽  
J. Lopez ◽  
...  

Abstract Ultra-short pulse laser ablation is applied to IC backside sample preparation. It is contact-less, non-thermal, precise and can ablate the various types of material present in IC packages. This study concerns the optimization of ultra-short pulse laser ablation for silicon thinning. Uncontrolled silicon roughness and poor uniformity of the laser thinned cavity needed to be tackled. Special care is taken to minimize the silicon RMS roughness to less than 1µm. Application to sample preparation of 256Mbit devices is presented.


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