Optical selection rule and oscillator strength of confined exciton system in CuCl thin films

1993 ◽  
Vol 71 (9) ◽  
pp. 1431-1434 ◽  
Author(s):  
Z. K. Tang ◽  
A. Yanase ◽  
T. Yasui ◽  
Y. Segawa ◽  
K. Cho
Keyword(s):  
Thin Films ◽  
Oscillator Strength ◽  
Selection Rule ◽  
Exciton System

Empirical Selection Rule of Substrate Materials for Iron Chalcogenide Superconducting Thin Films

2011 ◽  
Vol 51 (1) ◽  
pp. 010104 ◽  
Author(s):  
Masafumi Hanawa ◽  
Ataru Ichinose ◽  
Seiki Komiya ◽  
Ichiro Tsukada ◽  
Yoshinori Imai ◽  
...  
Keyword(s):  
Thin Films ◽  
Selection Rule ◽  
Superconducting Thin Films ◽  
Iron Chalcogenide

Empirical Selection Rule of Substrate Materials for Iron Chalcogenide Superconducting Thin Films

2012 ◽  
Vol 51 (1R) ◽  
pp. 010104 ◽  
Author(s):  
Masafumi Hanawa ◽  
Ataru Ichinose ◽  
Seiki Komiya ◽  
Ichiro Tsukada ◽  
Yoshinori Imai ◽  
...  
Keyword(s):  
Thin Films ◽  
Selection Rule ◽  
Superconducting Thin Films ◽  
Iron Chalcogenide

Enhancement in oscillator strength of color centers in electrochromic thin films deposited from WO2powder

1982 ◽  
Vol 53 (11) ◽  
pp. 7314-7320 ◽  
Author(s):  
Tetsuzo Yoshimura ◽  
Masaki Watanabe ◽  
Yoshio Koike ◽  
Kohei Kiyota ◽  
Masao Tanaka
Keyword(s):  
Thin Films ◽  
Oscillator Strength ◽  
Color Centers

scholarly journals Composition and Optical Dispersion Characterization of Nanoparticles ZnO-NiO Thin Films: Effect of Annealing Temperature

2013 ◽  
Vol 13 ◽  
pp. 78-86 ◽  
Author(s):  
Saad F. Oboudi ◽  
Nadir F. Habubi ◽  
Ghuson H. Mohamed ◽  
Sami S. Chiad
Keyword(s):  
Thin Films ◽  
Oscillator Strength ◽  
Annealing Temperature ◽  
Energy Gap ◽  
Dispersion Parameters ◽  
Optical Energy Gap ◽  
Optical Energy ◽  
Optical Dispersion ◽  
Glass Substrates ◽  
Before And After

Thin films of ZnO0.7NiO0.3 have deposited on glass substrates at room temperature by using thermal evaporation technique under vacuum 10-5 mbar. The optical properties and dispersion parameters of the films have been studied. Changes in direct optical energy band gap of films were confirmed before and after annealing. The optical energy gap Eg decreased from 3.11 to 2.86 eV with increasing of annealing temperature to 200 °C. Some of the optical absorption parameters, such as optical dispersion energies Eo and Ed, Urbach tails EU , dielectric constant ε, the average values of oscillator strength So, and wavelength of single oscillator λo have been reported. An increase in the annealing temperature causes an increase in the average oscillator strength from 62.02 to 87.71 eV.

scholarly journals Кинетика излучения поверхностных (би) экситонов в тонких пленках ZnO

2019 ◽  
Vol 61 (3) ◽  
pp. 533
Author(s):  
И.Х. Акопян ◽  
М.Э. Лабзовская ◽  
Б.В. Новиков ◽  
V.G. Talalaev ◽  
J.W. Tomm ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Oscillator Strength ◽  
Surface Potential ◽  
Radiative Lifetime ◽  
Atomic Layer ◽  
Zno Films ◽  
Ultrafast Dynamics ◽  
Layer Deposition ◽  
Kinetics Of

AbstractThe kinetics of near-edge photoluminescence (PL) in ZnO nanofilms prepared by the atomic layer deposition has been investigated. It is established that the kinetics of near-edge PL in 4-nm films is determined to a great extent by surface 2D-exciton (SX) and biexciton (SXX) complexes. The contribution from surface biexcitons is estimated based on a photostimulated change in the surface potential in ZnO films with different thicknesses. Ultrafast dynamics of surface biexcitons in thin films are revealed. It is shown that biexcitons localized near the surface have the shortest radiative lifetime (less than 100 ps) among all bound exciton complexes, which is explained by the large oscillator strength.

Oscillator Strength Measurements in the Vacuum-Ultraviolet by the Emission Method

1988 ◽  
Vol 102 ◽  
pp. 353-356
Author(s):  
C. Goldbach ◽  
G. Nollez
Keyword(s):  
Oscillator Strength ◽  
Vacuum Ultraviolet ◽  
Oscillator Strengths ◽  
Emission Method ◽  
Absolute Scale ◽  
Good Agreement

AbstractThe principles and the realization of an experiment devoted to oscillator strength measurements in the vacuum-ultraviolet by the emission method are briefly presented. The results obtained for the strong multiplets of neutral nitrogen and carbon in the 1200-2000 Å range yield an absolute scale of oscillator strengths in good agreement with the most recent calculations.

The study of interfacial reactions of nickel thin films on GaAs

1983 ◽  
Vol 41 ◽  
pp. 156-157
Author(s):  
L.J. Chen ◽  
Y.F. Hsieh
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Interfacial Reactions ◽  
Metal Contacts ◽  
Nickel Thin Films ◽  
Thin Foils ◽  
The Status ◽  
Si Doped ◽  
Electron Microscopes

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.

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