Locus of pairing interaction inYBa2Cu3O7by site-selective oxygen isotope shift:O18inCuO2plane layers

1993 ◽  
Vol 70 (1) ◽  
pp. 81-84 ◽  
Author(s):  
Janice H. Nickel ◽  
Donald E. Morris ◽  
Joel W. Ager
Keyword(s):  
Oxygen Isotope ◽  
Pairing Interaction ◽  
Site Selective

Site-selective oxygen isotope effect in optimally doped YBa2Cu3O6 + x

Nature ◽  
1994 ◽  
Vol 371 (6499) ◽  
pp. 681-683 ◽  
Author(s):  
D. Zech ◽  
H. Keller ◽  
K. Conder ◽  
E. Kaldis ◽  
E. Liarokapis ◽  
...  
Keyword(s):  
Oxygen Isotope ◽  
Isotope Effect ◽  
Site Selective

Site-selective oxygen isotope effect in highly doped YBa2Cu3Ox

1994 ◽  
Vol 235-240 ◽  
pp. 1221-1222 ◽  
Author(s):  
D. Zech ◽  
H. Keller ◽  
K.A. Müller ◽  
K. Conder ◽  
E. Kaldis
Keyword(s):  
Oxygen Isotope ◽  
Isotope Effect ◽  
Site Selective

Site-selective oxygen-isotope substitution inYBa2Cu3O7−δ

1991 ◽  
Vol 44 (17) ◽  
pp. 9556-9561 ◽  
Author(s):  
Donald E. Morris ◽  
Andrea G. Markelz ◽  
John Y. T. Wei ◽  
Charles T. Hultgren ◽  
Janice H. Nickel ◽  
...  
Keyword(s):  
Oxygen Isotope ◽  
Isotope Substitution ◽  
Site Selective

Oxygen isotope exchange kinetics and site-selective oxygen substitution in YBa2Cu318O7−χ

1993 ◽  
Vol 210 (1-2) ◽  
pp. 282-288 ◽  
Author(s):  
K. Conder ◽  
E. Kaldis ◽  
M. Maciejewski ◽  
K.A. Müller ◽  
E.F. Steigmeier
Keyword(s):  
Oxygen Isotope ◽  
Isotope Exchange ◽  
Oxygen Isotope Exchange ◽  
Exchange Kinetics ◽  
Oxygen Substitution ◽  
Site Selective ◽  
Isotope Exchange Kinetics

Landscape development in response to climatic change during Oxygen Isotope Stage 5 in the southern Siberian loess region

Boreas ◽  
2004 ◽  
Vol 33 (2) ◽  
pp. 164-180 ◽  
Author(s):  
Jiri Chlachula ◽  
Rob Kemp ◽  
Catherine Jessen ◽  
Adrian Palmer ◽  
Phillip Toms
Keyword(s):  
Oxygen Isotope ◽  
Climatic Change ◽  
Landscape Development ◽  
Oxygen Isotope Stage ◽  
Loess Region

Chemical and Electrochemical Heteroepitaxial Growth of Chalcogenide Semiconductors from Solutions

1996 ◽  
Vol 451 ◽  
Author(s):  
D. Lincot ◽  
M. J. Furlong ◽  
M. Froment ◽  
R. Cortes ◽  
M. C. Bernard
Keyword(s):  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
Basic Principles ◽  
Lattice Match ◽  
X Ray ◽  
Chalcogenide Semiconductors ◽  
Influence Of Temperature On ◽  
Deposition Processes ◽  
A Site ◽  
Site Selective

ABSTRACTChalcogenide semiconductors have been deposited epitaxially from aqueous solutions either chemically or electrochemically at growth rates of up to 0.7 μmhr−1. After recalling the basic principles of these deposition processes, results are presented concerning chemically deposited CdS on InP, GaP and CuInSe2 substrates, electrodeposited CdTe on InP, and CdSAnP heterostructures. Characterisation of these structures by RHEED, TEM, HRTEM, and glazing angle X ray diffraction allows to analyse the effects of substrate orientation, polarity, lattice match plus the influence of temperature on epitaxial growth. These results are discussed in terms of self organisation and a site selective growth mechanisms due to the free enegy of formation of each compound.

Sign in / Sign up

Export Citation Format

Share Document