Evidence for Spin-Orbit Splitting in the Band Structure of Zinc and Cadmium

1961 ◽  
Vol 7 (9) ◽  
pp. 334-336 ◽  
Author(s):  
A. S. Joseph ◽  
W. L. Gordon ◽  
J. R. Reitz ◽  
T. G. Eck
Keyword(s):  
Band Structure ◽  
Spin Orbit ◽  
Orbit Splitting ◽  
Spin Orbit Splitting

Band structure of gallium arsenide: Spin-orbit splitting

1965 ◽  
Vol 19 (4) ◽  
pp. 276-277 ◽  
Author(s):  
M. Cardona ◽  
F.H. Pollak ◽  
J.G. Broerman
Keyword(s):  
Gallium Arsenide ◽  
Band Structure ◽  
Spin Orbit ◽  
Orbit Splitting ◽  
Spin Orbit Splitting

Relativistic band structure and spin-orbit splitting of zinc-blende-type semiconductors

1988 ◽  
Vol 38 (3) ◽  
pp. 1806-1827 ◽  
Author(s):  
M. Cardona ◽  
N. E. Christensen ◽  
G. Fasol
Keyword(s):  
Band Structure ◽  
Spin Orbit ◽  
Orbit Splitting ◽  
Zinc Blende ◽  
Spin Orbit Splitting

TIGHT-BINDING BAND STRUCTURE AND SPIN-ORBIT SPLITTING FOR BULK InP

2010 ◽  
Vol 24 (28) ◽  
pp. 2815-2820
Author(s):  
W. WANG ◽  
M. H. ZHANG ◽  
H. LI ◽  
J. CHENG
Keyword(s):  
Band Structure ◽  
Tight Binding ◽  
Future Research ◽  
Spin Orbit ◽  
Hot Electron ◽  
Binding Model ◽  
Orbit Splitting ◽  
Valley Bottom ◽  
Spin Orbit Splitting ◽  
Hot Electron Effect

The band structure of InP is excellently produced using sp3d5s* tight-binding model. The spin-orbit splitting in the whole Brillouin zone derived from the InP Γ-valley of the lowest electronic subband, heavy hole, light hole and split-off hole is calculated. Considering the hot electron effect, the cases of L and X-valleys for the lowest electronic subband are also discussed. We then further present the electron spin-orbit coupling coefficient around the corresponding valley bottom. Our results should provide a promising direction for future research on spintronics.

REFLECTANCE OF GaAs, GaP, AND THE GaAs1−x Px ALLOYS

1966 ◽  
Vol 44 (11) ◽  
pp. 2927-2940 ◽  
Author(s):  
A. G. Thompson ◽  
J. C. Woolley ◽  
M. Rubenstein
Keyword(s):  
Band Structure ◽  
Liquid Nitrogen ◽  
Valence Band ◽  
Room Temperature ◽  
Alloy Composition ◽  
Liquid Nitrogen Temperature ◽  
Spin Orbit ◽  
Orbit Splitting ◽  
Spin Orbit Splitting ◽  
Detailed Picture

The reflectance of GaAs, GaP, and the GaAs1−x Px alloys has been measured between 2.5 eV and 20 eV at room temperature and between 2.5 eV and 6 eV at liquid-nitrogen temperature. The transitions E1, E1 + Δ1, Ecp, E0′, E2, E1′, E1′ + Δ1′, and d1 have all been observed and their behavior as a function of alloy composition is presented. The data have been used to give a more detailed picture of the band structure of GaAs and GaP and of the way in which the band structure varies with alloying. In particular, the spin-orbit splittings of the valence band are discussed and the relevance of the 2/3 spin-orbit splitting law considered.

Large spin-orbit splitting in inversion layers on HgCdTe with an inverted band structure

2018 ◽  
Vol 124 (2) ◽  
pp. 27006 ◽  
Author(s):  
Kuang Hong Gao ◽  
Guolin Yu ◽  
Yan Sun ◽  
Tingting Kang ◽  
Xin Chen ◽  
...  
Keyword(s):  
Band Structure ◽  
Spin Orbit ◽  
Orbit Splitting ◽  
Spin Orbit Splitting ◽  
Large Spin
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