Time-Resolved Optical Transmission and Reflectivity of Pulsed-Ruby-Laser Irradiated Crystalline Silicon

1982 ◽  
Vol 48 (4) ◽  
pp. 267-271 ◽  
Author(s):  
Douglas H. Lowndes
Keyword(s):  
Optical Transmission ◽  
Ruby Laser ◽  
Crystalline Silicon ◽  
Time Resolved

Time Resolved Transmission and Reflectivity of Pulsed Ruby Laser Irradiated Silicon

1981 ◽  
Vol 4 ◽  
Author(s):  
Douglas H. Lowndes ◽  
G. E. Jellison ◽  
R. F. Wood
Keyword(s):  
Ruby Laser ◽  
Crystalline Silicon ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Quantitative Agreement ◽  
Laser Wavelength ◽  
Time Resolved ◽  
Model Calculations ◽  
Thermal Melting ◽  
Apparent Disagreement

ABSTRACTThe time resolved optical transmission, T (atλ = 1152 nm), and reflectivity, R (at 633 nm and 1152 nm), have been measured for n-type single crystalline silicon (c-Si) during and immediately after pulsed ruby laser irradiation (λ = 693 nm, FWHM pulse duration 14 nsec), for a range of pulsed laser energy densities, El. The T is found to go to zero, and to remain at zero, for a period of time that increases with increasing El, in apparent disagreement with earlier measurements elsewhere that used semi-insulating Si and a different pulsed laser wavelength. Measured reflectivities during the high R phase agree within experimental error with reflectivities calculated from the optical constants of molten Si. Quantitative agreement is also found between both our T and R measurements and detailed time– and El-dependent results of thermal melting model calculations.

Time‐resolved optical transmission of pulsed laser‐irradiated silicon

1981 ◽  
Vol 38 (7) ◽  
pp. 499-501 ◽  
Author(s):  
M. C. Lee ◽  
H. W. Lo ◽  
A. Aydinli ◽  
A. Compaan
Keyword(s):  
Optical Transmission ◽  
Pulsed Laser ◽  
Time Resolved

Material Characterization by Contactless Photoconductivity Measurements

1986 ◽  
Vol 69 ◽  
Author(s):  
M. Kunst ◽  
A. Werner
Keyword(s):  
Crystalline Silicon ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Time Resolved ◽  
Quantum Well Structures ◽  
Transient Photoconductivity ◽  
Different Types ◽  
Intimate Relation ◽  
Hydrogenated Amorphous ◽  
Excellent Tool

AbstractTransient photoconductivity measurements with the time-resolved microwave conductivity (TRMC) method have been applied to three different types of semiconductors: hydrogenated amorphous silicon, single crystalline silicon and GaAs/GaAlAs multiple quantum well structures. Analysis of the signals in terms of charge carrier-lattice interaction points to an intimate relation between TRMC signals and intrinsic material properties. It is shown that the TRMC-technique is an excellent tool to characterize photosensitive materials.

Crystallization kinetics of amorphous Ga–Sb–Te films: Part II. Isothermal studies by a time-resolved optical transmission method

2004 ◽  
Vol 19 (10) ◽  
pp. 2938-2946 ◽  
Author(s):  
Chain-Ming Lee ◽  
Yeong-Iuan Lin ◽  
Tsung-Shune Chin
Keyword(s):  
Thin Films ◽  
Crystallization Kinetics ◽  
Isothermal Crystallization ◽  
Optical Transmission ◽  
Isothermal Kinetics ◽  
Initial Surface ◽  
Transmission Method ◽  
Time Resolved ◽  
Stage 1 ◽  
Kinetics Of

Isothermal crystallization kinetics of amorphous Ga–Sb–Te films was studied by means of a time-resolved optical transmission method. Thin films with compositions along the pseudo-binary tie-lines Sb7Te3–GaSb and Sb2Te3–GaSb in the ternary phase diagram were prepared by the co-sputtering method. Crystallization of GaSbTe films reveals a two-stage process: an initial surface nucleation and coarsening (Stage 1) followed by the one-dimensional grain growth (Stage 2). The kinetic exponent (n) value in Stage 1 shows strong dependence on film compositions, while that of Stage 2 is less dependent. The activation energy in Stage 1 increases with increasing GaSb content and reaches the maximum values at compositions close to GaSb, but a decreasing trend was observed in Stage 2. Kinetics parameters between isothermal crystallization of thin films and non-isothermal crystallization of powder samples analyzed by differential scanning colorimetry [J. Mater. Res. 19, 2929 (2004)] are compared. The kinetic parameters in Stage 1 show much correspondence with those of non-isothermal cases in comparable kinetic exponents but with lower activation energies. The discrepancies between nonisothermal and isothermal kinetics are attributed to the sample morphology and the constraint effects.

Time-Resolved Spectroscopy of Ruby Laser Emissions*

1963 ◽  
Vol 53 (6) ◽  
pp. 700 ◽  
Author(s):  
S. L. Ridgway ◽  
G. L. Clark ◽  
C. M. York
Keyword(s):  
Ruby Laser ◽  
Time Resolved ◽  
Time Resolved Spectroscopy

Time-resolved x-ray diffraction study of laser-induced shock and acoustic waves in single crystalline silicon

2009 ◽  
Vol 106 (4) ◽  
pp. 044914 ◽  
Author(s):  
K.-D. Liss ◽  
T. d’Almeida ◽  
M. Kaiser ◽  
R. Hock ◽  
A. Magerl ◽  
...  
Keyword(s):  
Diffraction Study ◽  
Acoustic Waves ◽  
Crystalline Silicon ◽  
Single Crystalline Silicon ◽  
X Ray Diffraction ◽  
Time Resolved ◽  
Single Crystalline ◽  
X Ray

Time-Resolved Beam Structure of an Active Q-Switched Ruby Laser

1967 ◽  
Vol 6 (11) ◽  
pp. 1957 ◽  
Author(s):  
W. E. K. Gibbs ◽  
R. E. Whitcher
Keyword(s):  
Ruby Laser ◽  
Beam Structure ◽  
Time Resolved
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