Hot-Carrier Thermalization in Amorphous Silicon

1981 ◽  
Vol 47 (9) ◽  
pp. 700-700 ◽  
Author(s):  
Z. Vardeny ◽  
J. Tauc
Keyword(s):  
Amorphous Silicon ◽  
Hot Carrier ◽  
Carrier Thermalization

Hot-Carrier Thermalization in Amorphous Silicon

1981 ◽  
Vol 46 (18) ◽  
pp. 1223-1226 ◽  
Author(s):  
Z. Vardeny ◽  
J. Tauc
Keyword(s):  
Amorphous Silicon ◽  
Hot Carrier ◽  
Carrier Thermalization

The Spectral Dependence of the Non-Radiative Efficiency in Hydrogenated Amorphous Silicon

1992 ◽  
Vol 258 ◽  
Author(s):  
J. Fan ◽  
J. Kakalios
Keyword(s):  
Amorphous Silicon ◽  
Room Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Free Carrier ◽  
Radiative Efficiency ◽  
Sharp Minimum ◽  
Carrier Thermalization ◽  
Hydrogenated Amorphous ◽  
Kinetics Of ◽  
Heat Released

ABSTRACTThe room temperature non-radiative efficiency, defined as the ratio of the heat released per absorbed photon for doped and undoped hydrogenated amorphous silicon (a-Si:H) has been measured using photo-pyroelectric spectroscopy (PPES) for photon energies ranging from 2.5 to 1.6 eV. There is a fairly sharp minimum in the non-radiative efficiency when the a-Si:H is illuminated with near bandgap photons. We describe a model wherein this minimum arises from the variation in the amount of heat generated by free carrier thermalization as the incident photon energy is varied, and report measurements of the excitation kinetics of the non-radiative efficiency which support this proposal.

Hot carrier thermalization in GaAs/AlAs superlattices

1989 ◽  
Vol 32 (12) ◽  
pp. 1863-1867 ◽  
Author(s):  
K. Leo ◽  
W.W. Rühle ◽  
K. Ploog
Keyword(s):  
Hot Carrier ◽  
Carrier Thermalization

scholarly journals Highly efficient hot electron harvesting from graphene before electron-hole thermalization

2019 ◽  
Vol 5 (11) ◽  
pp. eaax9958 ◽  
Author(s):  
Yuzhong Chen ◽  
Yujie Li ◽  
Yida Zhao ◽  
Hongzhi Zhou ◽  
Haiming Zhu
Keyword(s):  
Solar Cell ◽  
Quantum Yield ◽  
Nonlinear Behavior ◽  
Hot Electrons ◽  
Hot Electron ◽  
New Paradigm ◽  
Electron Hole ◽  
Mid Infrared ◽  
Hot Carrier ◽  
Carrier Thermalization

Although the unique hot carrier characteristics in graphene suggest a new paradigm for hot carrier–based energy harvesting, the reported efficiencies with conventional photothermoelectric and photothermionic emission pathways are quite low because of inevitable hot carrier thermalization and cooling loss. Here, we proposed and demonstrated the possibility of efficiently extracting hot electrons from graphene after carrier intraband scattering but before electron-hole interband thermalization, a new regime that has never been reached before. Using various layered semiconductors as model electron-accepting components, we generally observe ultrafast injection of energetic hot electrons from graphene over a very broad photon energy range (visible to mid-infrared). The injection quantum yield reaches as high as ~50%, depending on excitation energy but remarkably, not on fluence, in notable contrast with conventional pathways with nonlinear behavior. Hot electron harvesting in this regime prevails over energy and carrier loss and closely resembles the concept of hot carrier solar cell.

Hot Carrier Thermalization Dynamics in Low-Temperature-Grown III-V Semiconductors

1996 ◽  
pp. 97-99
Author(s):  
A. I. Lobad ◽  
Y. Kostoulas ◽  
G. W. Wicks ◽  
P. M. Fauchet
Keyword(s):  
Low Temperature ◽  
Hot Carrier ◽  
Carrier Thermalization

Subpicosecond hot carrier cooling in amorphous silicon

1998 ◽  
Vol 84 (9) ◽  
pp. 4984-4991 ◽  
Author(s):  
J. O. White ◽  
S. Cuzeau ◽  
D. Hulin ◽  
R. Vanderhaghen
Keyword(s):  
Amorphous Silicon ◽  
Hot Carrier

scholarly journals Photo-excited hot carrier dynamics in hydrogenated amorphous silicon imaged by 4D electron microscopy

2017 ◽  
Vol 12 (9) ◽  
pp. 871-876 ◽  
Author(s):  
Bolin Liao ◽  
Ebrahim Najafi ◽  
Heng Li ◽  
Austin J. Minnich ◽  
Ahmed H. Zewail
Keyword(s):  
Electron Microscopy ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Carrier Dynamics ◽  
Hot Carrier ◽  
Hydrogenated Amorphous

scholarly journals Identification of surface and volume hot-carrier thermalization mechanisms in ultrathin GaAs layers

2020 ◽  
Vol 128 (19) ◽  
pp. 193102
Author(s):  
Maxime Giteau ◽  
Edouard de Moustier ◽  
Daniel Suchet ◽  
Hamidreza Esmaielpour ◽  
Hassanet Sodabanlu ◽  
...  
Keyword(s):  
Hot Carrier ◽  
Carrier Thermalization
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