scholarly journals Identification of surface and volume hot-carrier thermalization mechanisms in ultrathin GaAs layers

2020 ◽  
Vol 128 (19) ◽  
pp. 193102
Author(s):  
Maxime Giteau ◽  
Edouard de Moustier ◽  
Daniel Suchet ◽  
Hamidreza Esmaielpour ◽  
Hassanet Sodabanlu ◽  
...  
Keyword(s):  
Hot Carrier ◽  
Carrier Thermalization

Hot carrier thermalization in GaAs/AlAs superlattices

1989 ◽  
Vol 32 (12) ◽  
pp. 1863-1867 ◽  
Author(s):  
K. Leo ◽  
W.W. Rühle ◽  
K. Ploog
Keyword(s):  
Hot Carrier ◽  
Carrier Thermalization

scholarly journals Highly efficient hot electron harvesting from graphene before electron-hole thermalization

2019 ◽  
Vol 5 (11) ◽  
pp. eaax9958 ◽  
Author(s):  
Yuzhong Chen ◽  
Yujie Li ◽  
Yida Zhao ◽  
Hongzhi Zhou ◽  
Haiming Zhu
Keyword(s):  
Solar Cell ◽  
Quantum Yield ◽  
Nonlinear Behavior ◽  
Hot Electrons ◽  
Hot Electron ◽  
New Paradigm ◽  
Electron Hole ◽  
Mid Infrared ◽  
Hot Carrier ◽  
Carrier Thermalization

Although the unique hot carrier characteristics in graphene suggest a new paradigm for hot carrier–based energy harvesting, the reported efficiencies with conventional photothermoelectric and photothermionic emission pathways are quite low because of inevitable hot carrier thermalization and cooling loss. Here, we proposed and demonstrated the possibility of efficiently extracting hot electrons from graphene after carrier intraband scattering but before electron-hole interband thermalization, a new regime that has never been reached before. Using various layered semiconductors as model electron-accepting components, we generally observe ultrafast injection of energetic hot electrons from graphene over a very broad photon energy range (visible to mid-infrared). The injection quantum yield reaches as high as ~50%, depending on excitation energy but remarkably, not on fluence, in notable contrast with conventional pathways with nonlinear behavior. Hot electron harvesting in this regime prevails over energy and carrier loss and closely resembles the concept of hot carrier solar cell.

Hot Carrier Thermalization Dynamics in Low-Temperature-Grown III-V Semiconductors

1996 ◽  
pp. 97-99
Author(s):  
A. I. Lobad ◽  
Y. Kostoulas ◽  
G. W. Wicks ◽  
P. M. Fauchet
Keyword(s):  
Low Temperature ◽  
Hot Carrier ◽  
Carrier Thermalization

Hot-Carrier Thermalization in Amorphous Silicon

1981 ◽  
Vol 46 (18) ◽  
pp. 1223-1226 ◽  
Author(s):  
Z. Vardeny ◽  
J. Tauc
Keyword(s):  
Amorphous Silicon ◽  
Hot Carrier ◽  
Carrier Thermalization

Quantification of hot carrier thermalization in PbS colloidal quantum dots by power and temperature dependent photoluminescence spectroscopy

RSC Advances ◽  
2016 ◽  
Vol 6 (93) ◽  
pp. 90846-90855 ◽  
Author(s):  
Wenkai Cao ◽  
Zewen Zhang ◽  
Rob Patterson ◽  
Yuan Lin ◽  
Xiaoming Wen ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cell ◽  
Photoluminescence Spectroscopy ◽  
Colloidal Quantum Dots ◽  
Temperature Dependent ◽  
Hot Carrier ◽  
Carrier Thermalization ◽  
Temperature Dependent Photoluminescence

PbS QDs are studied as attractive candidates to be applied as hot carrier solar cell absorbers.

Hot-Carrier Thermalization in Amorphous Silicon

1981 ◽  
Vol 47 (9) ◽  
pp. 700-700 ◽  
Author(s):  
Z. Vardeny ◽  
J. Tauc
Keyword(s):  
Amorphous Silicon ◽  
Hot Carrier ◽  
Carrier Thermalization

scholarly journals Asymmetric hot-carrier thermalization and broadband photoresponse in graphene-2D semiconductor lateral heterojunctions

2019 ◽  
Vol 5 (6) ◽  
pp. eaav1493 ◽  
Author(s):  
Yuxuan Lin ◽  
Qiong Ma ◽  
Pin-Chun Shen ◽  
Batyr Ilyas ◽  
Yaqing Bie ◽  
...  
Keyword(s):  
Direct Synthesis ◽  
Monolayer Graphene ◽  
Proof Of Concept ◽  
Hot Carrier ◽  
Heterogeneous Interfaces ◽  
Matter Interaction ◽  
Dirac Electron ◽  
Light Matter Interaction ◽  
Low Dimensional ◽  
Carrier Thermalization

The massless Dirac electron transport in graphene has led to a variety of unique light-matter interaction phenomena, which promise many novel optoelectronic applications. Most of the effects are only accessible by breaking the spatial symmetry, through introducing edges, p-n junctions, or heterogeneous interfaces. The recent development of direct synthesis of lateral heterostructures offers new opportunities to achieve the desired asymmetry. As a proof of concept, we study the photothermoelectric effect in an asymmetric lateral heterojunction between the Dirac semimetallic monolayer graphene and the parabolic semiconducting monolayer MoS2. Very different hot-carrier cooling mechanisms on the graphene and the MoS2 sides allow us to resolve the asymmetric thermalization pathways of photoinduced hot carriers spatially with electrostatic gate tunability. We also demonstrate the potential of graphene-2D semiconductor lateral heterojunctions as broadband infrared photodetectors. The proposed structure shows an extreme in-plane asymmetry and provides a new platform to study light-matter interactions in low-dimensional systems.

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