Neutral-Impurity Scattering and Impurity Zeeman Spectroscopy in Semiconductors Using Highly Spin-Polarized Carriers

1966 ◽  
Vol 17 (4) ◽  
pp. 186-188 ◽  
Author(s):  
A. Honig
Keyword(s):  
Impurity Scattering ◽  
Spin Polarized ◽  
Neutral Impurity

scholarly journals Neutral impurity scattering in semiconductors

1975 ◽  
Vol 11 (12) ◽  
pp. 5208-5210 ◽  
Author(s):  
T. C. McGill ◽  
R. Baron
Keyword(s):  
Impurity Scattering ◽  
Neutral Impurity

Neutral impurity scattering in semiconductors

1996 ◽  
Vol 18 (7) ◽  
pp. 885-888
Author(s):  
B. Alkan
Keyword(s):  
Impurity Scattering ◽  
Neutral Impurity

Transport Modeling and Compensation Mechanism for Semi-Insulating LT-Gaas and InP: Cu

1991 ◽  
Vol 241 ◽  
Author(s):  
K. Xie ◽  
C. R. Wie
Keyword(s):  
Impurity Scattering ◽  
Band Model ◽  
Compensation Mechanism ◽  
Mobility Data ◽  
Carrier Scattering ◽  
Deep Donor ◽  
Neutral Impurity ◽  
Major Carrier ◽  
Precipitate Model ◽  
Lt Gaas

ABSTRACTThe compensation mechanism and transport properties of annealed GaAs grown by molecular beam epitaxy at low substrate temperature (LT-GaAs) and Cu diffused InP are analyzed by using a deep donor band model and a precipitate model. It was found that the compensation in highly resistive LT GaAs can not be explained by the precipitate model alone, and therefore a high donor density had to be considered. In Cu diffused InP, the precipitate model gives a consistent explanation for the observed carrier compensation and mobility data. For both semi-insulating LT-GaAs and fully-compensated, lightly-doped InP:Cu, the neutral impurity scattering was found to be a major carrier scattering mechanism.

Indications of strong neutral impurity scattering in Ba(Sn,Sb)O3single crystals

2013 ◽  
Vol 88 (12) ◽  
Author(s):  
Hyung Joon Kim ◽  
Jiyeon Kim ◽  
Tai Hoon Kim ◽  
Woong-Jhae Lee ◽  
Byung-Gu Jeon ◽  
...  
Keyword(s):  
Impurity Scattering ◽  
Neutral Impurity

HALL MOBILITY IN n-TYPE 4H-SiC: CALCULATION USING HYDRODYNAMIC BALANCE EQUATIONS

2002 ◽  
Vol 16 (03) ◽  
pp. 463-471 ◽  
Author(s):  
HONG-JUN QUAN ◽  
BING-HONG WANG ◽  
XIAO-SHU LUO
Keyword(s):  
Experimental Data ◽  
High Temperature ◽  
Hall Mobility ◽  
Optical Lattice ◽  
Significant Contribution ◽  
Impurity Scattering ◽  
Temperature Data ◽  
Balance Equations ◽  
Neutral Impurity ◽  
Good Agreement

The Hall mobility in n-type 4H-SiC has been calculated by hydrodynamic balance equations for temperatures ranging from 30 to 1000 K. We employ a compensation model to analyze the carrier concentration versus temperature data. The results show that the neutral impurity scattering and the piezoelectric scattering do not make significant contribution to the electron mobility. The low-temperature value of the mobility is mainly due to the ionized impurity while the high-temperature tail is limited by acoustic, polar optical and intervalley optical lattice scatterings. These results are in good agreement with the experimental data.

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