Semiclassical calculation of the energy dispersion relation in the valence band of the quantum pendulum

1978 ◽  
Vol 17 (2) ◽  
pp. 498-506 ◽  
Author(s):  
H. Neuberger
2014 ◽  
Vol 1015 ◽  
pp. 235-239
Author(s):  
Shao Guang Dong ◽  
Guo Jie Chen ◽  
Xin Chen

Thek·pinteraction of the conduction band and valence band of InN materials was calculated in this paper. The nonparabolicity of the conduction band is more pronounced, because the conduction band feels stronger perturbation from the valence bands whenEgis smaller orEPis larger. The increase in absorption edge with increasing electron concentration was calculated by the dispersion relation. In the calculation, the conduction band renormalization effects due to electron interaction and electron-ionized impurity interaction are also taken into account. A good consistent picture is established in describing the conduction band of InN based on thek·pinteraction.


2008 ◽  
Vol 57 (11) ◽  
pp. 7228
Author(s):  
Song Jian-Jun ◽  
Zhang He-Ming ◽  
Dai Xian-Ying ◽  
Hu Hui-Yong ◽  
Xuan Rong-Xi

Entropy ◽  
2021 ◽  
Vol 23 (4) ◽  
pp. 417
Author(s):  
Vito Dario Camiola ◽  
Liliana Luca ◽  
Vittorio Romano

In Section 5 of Equilibrium Wigner Function for Fermions and Bosons in the Case of a General Energy Dispersion Relation [...]


2019 ◽  
Vol 3 ◽  
pp. 186
Author(s):  
G. Pantis

The optical model potential to p+16 0 scattering is derived by taking into account the polarization potential induced by the energy dispersion relation. The real part of the potential is derived by the RGM-method with the Volkov or Minnesota potential as a basis for the n-n force. It is shown that the polarization potential effects an adjustment of the parameters of the n-n force due to the constraints imposed by the energy dispersion relation.


2014 ◽  
Vol 25 (2) ◽  
pp. 255-276 ◽  
Author(s):  
GIUSEPPE ALÌ ◽  
GIOVANNI MASCALI ◽  
VITTORIO ROMANO ◽  
ROSA CLAUDIA TORCASIO

We present the first macroscopical model for charge transport in compound semiconductors to make use of analytic ellipsoidal approximations for the energy dispersion relationships in the neighbours of the lowest minima of the conduction bands. The model considers the main scattering mechanisms charges undergo in polar semiconductors, that is the acoustic, polar optical, intervalley non-polar optical phonon interactions and the ionized impurity scattering. Simulations are shown for the cases of bulk 4H and 6H-SiC.


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