scholarly journals Thermalization of Yang-Mills theory in a ( 3+1 )-dimensional small lattice system

2021 ◽  
Vol 103 (9) ◽  
Author(s):  
Tomoya Hayata ◽  
Yoshimasa Hidaka
2021 ◽  
Vol 81 (2) ◽  
Author(s):  
Nikos Irges ◽  
Fotis Koutroulis

AbstractWe construct the zero temperature (no compact dimensions) effective action for an SU(2) Yang–Mills theory in five dimensions, with boundary conditions that reduce the symmetry on the four-dimensional boundary located at the origin to a U(1)-complex scalar system. In order to be sensitive to the Higgs phase, we need to include higher dimensional operators in the effective action, which can be naturally achieved by generating it by expanding the corresponding lattice construction in small lattice spacing, taking the naive continuum limit and then renormalizing. In addition, we build in the effective action non-perturbative information, related to a first order quantum phase transition known to exist. As a result, the effective action acquires a finite cut-off that is low and the fine tuning of the scalar mass is rather mild.


Author(s):  
N. David Theodore ◽  
Andre Vantomme ◽  
Peter Crazier

Contact is typically made to source/drain regions of metal-oxide-semiconductor field-effect transistors (MOSFETs) by use of TiSi2 or CoSi2 layers followed by AI(Cu) metal lines. A silicide layer is used to reduce contact resistance. TiSi2 or CoSi2 are chosen for the contact layer because these silicides have low resistivities (~12-15 μΩ-cm for TiSi2 in the C54 phase, and ~10-15 μΩ-cm for CoSi2). CoSi2 has other desirable properties, such as being thermally stable up to >1000°C for surface layers and >1100°C for buried layers, and having a small lattice mismatch with silicon, -1.2% at room temperature. During CoSi2 growth, Co is the diffusing species. Electrode shorts and voids which can arise if Si is the diffusing species are therefore avoided. However, problems can arise due to silicide-Si interface roughness (leading to nonuniformity in film resistance) and thermal instability of the resistance upon further high temperature annealing. These problems can be avoided if the CoSi2 can be grown epitaxially on silicon.


Author(s):  
S.R. Summerfelt ◽  
C.B. Carter

The wustite-spinel interface can be viewed as a model interface because the wustite and spinel can share a common f.c.c. oxygen sublattice such that only the cations distribution changes on crossing the interface. In this study, the interface has been formed by a solid state reaction involving either external or internal oxidation. In systems with very small lattice misfit, very large particles (>lμm) with coherent interfaces have been observed. Previously, the wustite-spinel interface had been observed to facet on {111} planes for MgFe2C4 and along {100} planes for MgAl2C4 and MgCr2O4, the spinel then grows preferentially in the <001> direction. Reasons for these experimental observations have been discussed by Henriksen and Kingery by considering the strain energy. The point-defect chemistry of such solid state reactions has been examined by Schmalzried. Although MgO has been the principal matrix material examined, others such as NiO have also been studied.


Author(s):  
Laurent Baulieu ◽  
John Iliopoulos ◽  
Roland Sénéor

A geometrical derivation of Abelian and non- Abelian gauge theories. The Faddeev–Popov quantisation. BRST invariance and ghost fields. General discussion of BRST symmetry. Application to Yang–Mills theories and general relativity. A brief history of gauge theories.


1995 ◽  
Vol 52 (4) ◽  
pp. 2402-2411 ◽  
Author(s):  
C. R. Hu ◽  
S. G. Matinyan ◽  
B. Müller ◽  
A. Trayanov ◽  
T. M. Gould ◽  
...  

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