Band mixing and structure of Pd106,108

2018 ◽  
Vol 98 (6) ◽  
Author(s):  
H. T. Fortune
Keyword(s):  
Band Mixing

Effects of Giant Optical Anisotropy in R-plane GaN/AlGaN Quantum Wells by Valence Band Mixing

PIERS Online ◽  
2006 ◽  
Vol 2 (6) ◽  
pp. 562-566 ◽  
Author(s):  
Chun-Nan Chen ◽  
Kao-Feng Yarn ◽  
Win Jet Luo ◽  
Jih-Chen Chiang ◽  
Ikai Lo ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Optical Anisotropy ◽  
Band Mixing ◽  
Valence Band Mixing

scholarly journals Valence Band Mixing in GaAs/AlGaAs Quantum Wells Adjacent to Self-Assembled InAlAs Antidots

2019 ◽  
Vol 2019 ◽  
pp. 1-7
Author(s):  
Takuya Kawazu
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Valence Band ◽  
Energy Barrier ◽  
Heavy Hole ◽  
Electronic States ◽  
Light Hole ◽  
Photoluminescence Excitation ◽  
Band Mixing ◽  
Valence Band Mixing

Optical properties of GaAs/AlGaAs quantum wells (QWs) in the vicinity of InAlAs quantum dots (QDs) were studied and compared with a theoretical model to clarify how the QD strain affects the electronic states in the nearby QW. In0.4Al0.6As QDs are embedded at the top of the QWs; the QD layer acts as a source of strain as well as an energy barrier. Photoluminescence excitation (PLE) measurements showed that the QD formation leads to the increase in the ratio Ie-lh/Ie-hh of the PLE intensities for the light hole (lh) and the heavy hole (hh), indicating the presence of the valence band mixing. We also theoretically calculated the hh-lh mixing in the QW due to the nearby QD strain and evaluated the PLE ratio Ie-lh/Ie-hh.

Quantum phase transitions and band mixing in 135Ba

2021 ◽  
Author(s):  
Amir Jalili Majarshin ◽  
Yan-An Luo ◽  
Feng Pan ◽  
H T Fortune ◽  
Yu Zhang ◽  
...  
Keyword(s):  
Phase Transitions ◽  
Quantum Phase Transitions ◽  
Quantum Phase ◽  
Band Mixing

OPTICAL PROPERTIES OF CdTe AND CdS QUANTUM DOTS IN GLASS

1992 ◽  
Vol 01 (01) ◽  
pp. 25-50 ◽  
Author(s):  
V. ESCH ◽  
K. KANG ◽  
B. FLUEGEL ◽  
Y.Z. HU ◽  
G. KHITROVA ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Optical Nonlinearities ◽  
Cds Quantum Dots ◽  
Temperature Dependent ◽  
Linear Absorption ◽  
Crystallite Sizes ◽  
Band Mixing ◽  
Quantum Confined ◽  
Coulomb Effects

We summarize the linear and nonlinear optical properties of a variety of CdTe and CdS quantum dots in glass. The measured linear absorption of the CdTe sample is compared with calculations involving valence-band mixing due to the quantum confinement. The temperature dependence of the lowest quantum-confined transition and its linewidth for samples with various crystallite sizes are measured and compared with a simple model. It is found that the shift of the energetically lowest quantum-confined transition as a function of temperature is the same as the temperature-dependent band-gap reduction in bulk materials. Excitation of the sample with pulses ranging from femtoseconds to microseconds allows distinguishing between various mechanisms responsible for the observed optical nonlinearities. At very early times, phase-space filling and Coulomb interaction between the excited charged carriers are responsible for the absorption changes. At later times, Coulomb effects due to “trapped” carriers remain and last for nanoseconds or microseconds.

Band mixing in 154Gd

2018 ◽  
Vol 54 (10) ◽  
Author(s):  
H. T. Fortune
Keyword(s):  
Band Mixing

TheTa181(d,p)Ta182Reaction and a Band-Mixing Analysis of the Observed Energy Levels

1964 ◽  
Vol 133 (2B) ◽  
pp. B370-B377 ◽  
Author(s):  
J. R. Erskine ◽  
W. W. Buechner
Keyword(s):  
Energy Levels ◽  
Band Mixing

Graphene for Magnetoresistive Junctions

2011 ◽  
Vol 1284 ◽  
Author(s):  
J. Inoue ◽  
T. Hiraiwa ◽  
R. Sato ◽  
A. Yamamura ◽  
S. Honda ◽  
...  
Keyword(s):  
Dirac Point ◽  
Electron Tunneling ◽  
Tight Binding ◽  
Metal Electrodes ◽  
Binding Model ◽  
Transition Metal Alloys ◽  
Dependent Change ◽  
Band Mixing ◽  
Junction Structure ◽  
Very High

ABSTRACTInfluence of the linear energy-momentum relationship in graphene on conductance and magnetoresistance (MR) in ferromagnetic metal (FM)/graphene/FM lateral junctions is studied in a numerical simulation formulated using the Kubo formula and recursive Green’s function method in a tight-binding model. It is shown that the contribution of electron tunneling through graphene should be considered in the electronic transport in metal/graphene/metal junctions, and that the Dirac point (DP) is effectively shifted by the band mixing between graphene and metal electrodes. It is shown that MR appears due to spin-dependent shift of DP or spin-dependent change in the electronic states at DPs. It is shown that the MR ratio caused by the latter mechanism can be very high when certain transition metal alloys are used for electrodes. These results do not essentially depend on the shape of the junction structure. However, to obtain high MR ratios, the effects of roughness should be small.

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