Net charge fluctuations and local charge compensation

2006 ◽  
Vol 74 (6) ◽  
Author(s):  
Jinghua Fu
1993 ◽  
Vol 88 (8) ◽  
pp. 619-621 ◽  
Author(s):  
A. Watterich ◽  
O.R. Gilliam ◽  
L.A. Kappers

2009 ◽  
Vol 15 (S2) ◽  
pp. 332-333
Author(s):  
H Schulz ◽  
U Zeile ◽  
JP Stodolka ◽  
D Kraft

Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009


2015 ◽  
Vol 17 (26) ◽  
pp. 16744-16751 ◽  
Author(s):  
Wenxing Yang ◽  
Meysam Pazoki ◽  
Anna I. K. Eriksson ◽  
Yan Hao ◽  
Gerrit Boschloo

Photo-induced absorption spectroscopy on dye-sensitized solar cells reveals reversible electron-induced cation adsorption at the TiO2 surface, resulting in changes of the surface electric field.


2014 ◽  
Vol 41 (5) ◽  
pp. 347-359 ◽  
Author(s):  
Haohao Yi ◽  
Etienne Balan ◽  
Christel Gervais ◽  
Loïc Ségalen ◽  
Marc Blanchard ◽  
...  

2007 ◽  
Vol 16 (10) ◽  
pp. 3339-3346
Author(s):  
FU JINGHUA

It is demonstrated in this paper that, in terms of a schematic multiperipheral model, net charge fluctuation satisfies the same Quigg–Thomas relation as satisfied by charge transfer fluctuation. Net charge fluctuations measured in finite rapidity windows depend on both the local charge correlation length and the size of the observation window. When the observation window is larger than the local charge correlation length, the net charge fluctuation only depends on the local charge correlation length and can be used as a measure of local charge correlation length.


2019 ◽  
Vol 9 (15) ◽  
pp. 3054 ◽  
Author(s):  
Zeheng Wang ◽  
Zhenwei Zhang ◽  
Shengji Wang ◽  
Chao Chen ◽  
Zirui Wang ◽  
...  

In this paper, a novel, GaN-based high electron mobility transistor (HEMT) using an ultra-thin barrier (UTB) with a local charge compensation trench (LCCT) is designed and optimized. Because the negative plasma-etching process, as well as the relaxing lattice during the process would introduce equivalent negative charges into the under-LCCT region, the electron will be partially squeezed out from this area. The electric field (E-field) around this region will therefore redistribute smoothly. Owing to this, the proposed LCCT-HEMT performs better in power applications. According to the simulation that is calibrated by the experimental data, the Baliga’s figure of merits (BFOM) of LCCT-HEMT is around two times higher than that of the conventional UTB-HEMT, hinting at the promising potential of proposed HEMT.


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