Pion elastic and inelastic scattering from48,50Ti,Cr52, and54,56Fe at 180 MeV: Determination of neutron and proton multipole matrix elements

1987 ◽  
Vol 35 (4) ◽  
pp. 1392-1402 ◽  
Author(s):  
D. S. Oakley ◽  
M. J. Smithson ◽  
S. Mordechai ◽  
C. Fred Moore ◽  
P. A. Seidl ◽  
...  
Author(s):  
S. Golladay

The theory of multiple scattering has been worked out by Groves and comparisons have been made between predicted and observed signals for thick specimens observed in a STEM under conditions where phase contrast effects are unimportant. Independent measurements of the collection efficiencies of the two STEM detectors, calculations of the ratio σe/σi = R, where σe, σi are the total cross sections for elastic and inelastic scattering respectively, and a model of the unknown mass distribution are needed for these comparisons. In this paper an extension of this work will be described which allows the determination of the required efficiencies, R, and the unknown mass distribution from the data without additional measurements or models. Essential to the analysis is the fact that in a STEM two or more signal measurements can be made simultaneously at each image point.


1981 ◽  
Vol 24 (2) ◽  
pp. 598-604 ◽  
Author(s):  
Kenneth G. Boyer ◽  
William B. Cottingame ◽  
L. E. Smith ◽  
Steven J. Greene ◽  
C. Fred Moore ◽  
...  

Author(s):  
Y. Kikuchi ◽  
N. Hashikawa ◽  
F. Uesugi ◽  
E. Wakai ◽  
K. Watanabe ◽  
...  

In order to measure the concentration of arsenic atoms in nanometer regions of arsenic doped silicon, the HOLZ analysis is carried out underthe exact [011] zone axis observation. In previous papers, it is revealed that the position of two bright lines in the outer SOLZ structures on the[011] zone axis is little influenced by the crystal thickness and the background intensity caused by inelastic scattering electrons, but is sensitive to the concentration of As atoms substitutbnal for Siatomic site.As the result, it becomes possible to determine the concentration of electrically activated As atoms in silicon within an observed area by means of the simple fitting between experimental result and dynamical simulatioan. In the present work, in order to investigate the distribution of electrically activated As in silicon, the outer HOLZ analysis is applied using a nanometer sized probe of TEM equipped with a FEG.Czodiralsld-gown<100>orientated p-type Si wafers with a resistivity of 10 Ώ cm are used for the experiments.TheAs+ implantation is performed at a dose of 5.0X1015cm-2at 25keV.


1981 ◽  
Vol 102 (4) ◽  
pp. 242-246 ◽  
Author(s):  
M. Buenerd ◽  
J. Pinston ◽  
J. Cole ◽  
C. Guet ◽  
D. Lebrun ◽  
...  

1966 ◽  
Vol 79 (1) ◽  
pp. 188-192 ◽  
Author(s):  
I. Boca ◽  
M. Borşaru ◽  
M. Cenja ◽  
C. Haţegan ◽  
E. Iliescu ◽  
...  

1993 ◽  
Vol 48 (3) ◽  
pp. 1050-1055 ◽  
Author(s):  
S. Pittel ◽  
P. Federman ◽  
G. E. Arenas Peris ◽  
R. F. Casten ◽  
W.-T. Chou
Keyword(s):  

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