Pion inelastic scattering to the low-lying states inCa42,44,48: Determination of the neutron and proton multipole matrix elements

1981 ◽  
Vol 24 (2) ◽  
pp. 598-604 ◽  
Author(s):  
Kenneth G. Boyer ◽  
William B. Cottingame ◽  
L. E. Smith ◽  
Steven J. Greene ◽  
C. Fred Moore ◽  
...  
Keyword(s):  
Inelastic Scattering ◽  
Matrix Elements ◽  
Pion Inelastic Scattering

Neutron and proton matrix elements for transitions inK39from pion inelastic scattering

1987 ◽  
Vol 36 (2) ◽  
pp. 710-713 ◽  
Author(s):  
S. Mordechai ◽  
M. J. Smithson ◽  
M. Lynker ◽  
D. S. Oakley ◽  
C. Fred Moore ◽  
...  
Keyword(s):  
Inelastic Scattering ◽  
Matrix Elements ◽  
Pion Inelastic Scattering

Neutron and proton matrix elements for21+transitions inT=1nuclei from pion inelastic scattering

1987 ◽  
Vol 35 (4) ◽  
pp. 1388-1391 ◽  
Author(s):  
C. L. Morris ◽  
S. J. Seestrom-Morris ◽  
D. Dehnhard ◽  
C. L. Blilie ◽  
R. Gilman ◽  
...  
Keyword(s):  
Inelastic Scattering ◽  
Matrix Elements ◽  
Pion Inelastic Scattering

NEUTRON-PROTON RATIOS OF COLLECTIVE QUADRUPOLE MATRIX ELEMENTS IN EVEN Fe AND Cr ISOTOPES

1990 ◽  
Vol 05 (07) ◽  
pp. 481-486
Author(s):  
R. ANTALIK
Keyword(s):  
Inelastic Scattering ◽  
Matrix Elements ◽  
Pion Inelastic Scattering ◽  
Theoretical Results ◽  
Good Agreement

Mn/Mp ratios are investigated within the QRPA framework for the low-lying quadrupole states and for isoscalar giant quadrupole resonances in 54, 56, 58Fe and 50, 52, 54Cr. Theoretical results for [Formula: see text] states are in good agreement with empirical ones obtained from recent proton and pion inelastic scattering studies.

Pion elastic and inelastic scattering from48,50Ti,Cr52, and54,56Fe at 180 MeV: Determination of neutron and proton multipole matrix elements

1987 ◽  
Vol 35 (4) ◽  
pp. 1392-1402 ◽  
Author(s):  
D. S. Oakley ◽  
M. J. Smithson ◽  
S. Mordechai ◽  
C. Fred Moore ◽  
P. A. Seidl ◽  
...  
Keyword(s):  
Inelastic Scattering ◽  
Matrix Elements ◽  
Elastic And Inelastic Scattering

Analysis of STEM micrographs of thick objects

1978 ◽  
Vol 36 (2) ◽  
pp. 106-107
Author(s):  
S. Golladay
Keyword(s):  
Inelastic Scattering ◽  
Multiple Scattering ◽  
Mass Distribution ◽  
Cross Sections ◽  
Phase Contrast ◽  
Image Point ◽  
Contrast Effects ◽  
Total Cross Sections ◽  
Elastic And Inelastic Scattering

The theory of multiple scattering has been worked out by Groves and comparisons have been made between predicted and observed signals for thick specimens observed in a STEM under conditions where phase contrast effects are unimportant. Independent measurements of the collection efficiencies of the two STEM detectors, calculations of the ratio σe/σi = R, where σe, σi are the total cross sections for elastic and inelastic scattering respectively, and a model of the unknown mass distribution are needed for these comparisons. In this paper an extension of this work will be described which allows the determination of the required efficiencies, R, and the unknown mass distribution from the data without additional measurements or models. Essential to the analysis is the fact that in a STEM two or more signal measurements can be made simultaneously at each image point.

Determination of arsenic atom distribution arsenic doped silicon using HOLZ-line analysis

1996 ◽  
Vol 54 ◽  
pp. 976-977
Author(s):  
Y. Kikuchi ◽  
N. Hashikawa ◽  
F. Uesugi ◽  
E. Wakai ◽  
K. Watanabe ◽  
...  
Keyword(s):  
Inelastic Scattering ◽  
Zone Axis ◽  
Experimental Result ◽  
Background Intensity ◽  
Crystal Thickness ◽  
Arsenic Atom ◽  
Doped Silicon ◽  
P Type ◽  
Line Analysis

In order to measure the concentration of arsenic atoms in nanometer regions of arsenic doped silicon, the HOLZ analysis is carried out underthe exact [011] zone axis observation. In previous papers, it is revealed that the position of two bright lines in the outer SOLZ structures on the[011] zone axis is little influenced by the crystal thickness and the background intensity caused by inelastic scattering electrons, but is sensitive to the concentration of As atoms substitutbnal for Siatomic site.As the result, it becomes possible to determine the concentration of electrically activated As atoms in silicon within an observed area by means of the simple fitting between experimental result and dynamical simulatioan. In the present work, in order to investigate the distribution of electrically activated As in silicon, the outer HOLZ analysis is applied using a nanometer sized probe of TEM equipped with a FEG.Czodiralsld-gown<100>orientated p-type Si wafers with a resistivity of 10 Ώ cm are used for the experiments.TheAs+ implantation is performed at a dose of 5.0X1015cm-2at 25keV.

Semiempirical determination of effectivep-nmonopole matrix elements

1993 ◽  
Vol 48 (3) ◽  
pp. 1050-1055 ◽  
Author(s):  
S. Pittel ◽  
P. Federman ◽  
G. E. Arenas Peris ◽  
R. F. Casten ◽  
W.-T. Chou
Keyword(s):  
Matrix Elements
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