Baryon rapidity distribution and stopping power of high-energy colliding nuclei

1983 ◽  
Vol 27 (5) ◽  
pp. 2037-2041 ◽  
Author(s):  
J. Kapusta
Keyword(s):  
High Energy ◽  
Rapidity Distribution ◽  
Stopping Power

FORMULATION OF NEGATIVELY CHARGED PARTICLE RAPIDITY DISTRIBUTION IN NUCLEUS–NUCLEUS COLLISIONS AT HIGH ENERGY

2000 ◽  
Vol 15 (24) ◽  
pp. 1497-1501 ◽  
Author(s):  
FU-HU LIU
Keyword(s):  
Experimental Data ◽  
Charged Particle ◽  
High Energy ◽  
Rapidity Distribution

The negatively charged particle rapidity distribution in nucleus–nucleus collisions at high energy has been described by the thermalized cylinder picture. The calculated results are compared and found to be in agreement with the experimental data of the reactions 16 O + Au at 60A and 200A GeV, 32 S + Ag and S at 200A GeV, and 208 Pb + Pb at 158A GeV bombarding energies.

Three-Dimensional Lithography for Rutile TiO2 Single Crystals using Swift Heavy Ions

2003 ◽  
Vol 797 ◽  
Author(s):  
Koichi Awazu ◽  
Makoto Fujimaki ◽  
Yoshimichi Ohki ◽  
Tetsuro Komatsubara
Keyword(s):  
Single Crystal ◽  
Hydrofluoric Acid ◽  
Ion Irradiation ◽  
Three Dimensional ◽  
Heavy Ion ◽  
High Energy ◽  
Stopping Power ◽  
A Value ◽  
Microscopy Measurement ◽  
Electronic Stopping Power

ABSTRACTWe have developed a nano-micro structure fabrication method in rutile TiO2 single crystal by use of swift heavy-ion irradiation. The area where ions heavier than Cl ion accelerated with MeV-order high energy were irradiated was well etched by hydrofluoric acid, by comparison etching was not observed in the pristine TiO2 single crystal. Noticed that the irradiated area could be etched to a depth at which the electronic stopping power of the ion decayed to a value of 6.2keV/nm. We also found that the value of the electronic stopping power was increased, eventually decreased against depth in TiO2 single crystal with, e.g. 84.5MeV Ca ion. Using such a beam, inside of TiO2 single crystal was selectively etched with 20% hydrofluoric acid, while the top surface of TiO2 single crystal subjected to irradiation was not etched. Roughness of the new surface created in the single crystal was within 7nm with the atomic forth microscopy measurement.

Electrical Contact and Adhesion Modification Produced by High Energy Heavy Ion Bombardment of Au Films on GaAs

1984 ◽  
Vol 37 ◽  
Author(s):  
R. P. Livi ◽  
S. Paine ◽  
C. R. Wie ◽  
M. H. Mendenhall ◽  
J. Y. Tang ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Electrical Contact ◽  
Ion Bombardment ◽  
Scratch Test ◽  
Heavy Ion ◽  
High Energy ◽  
Stopping Power ◽  
Dose Threshold ◽  
Electronic Stopping Power

AbstractThin gold films over GaAs wafers with different dopants (Cr, Si, Te, and Zn) were used to study the role of he substrate electronic properties in the electrical contact and adhesion modification induced by MeV/nucleon heavy ion bombardment. The enhanced adhesion was studied using a scratch test; the results show very different modifications of adhesion depending on the bulk electronic properties of the substrate. The sample with a Cr compensation doped substrate showed enhancement in adhesion for beam doses as low as 1012 ions/cm2, but Si and Te doped (n–type) substrates showed a sudden enhancement in adhesion for doses around 1014 ions/cm2. Samples with Si and Te doped substrates were used to sudy the bombarding ion dE/dx dependence of the induced adhesion for 19F and 35C1 ions with electronic stopping power ranging from 161 eV/Å to 506 eV/Å. In this range the dose threshold fgfjhe ops! of induced adhesion has a power law dependence, D = D0(dE/dx)− (1.90 ± 1.0)

Computersimulation des Durchgangs schneller schwerer Ionen durch einkristalline dünne Goldschichten

1974 ◽  
Vol 29 (10) ◽  
pp. 1442-1448 ◽  
Author(s):  
H. Schmidt ◽  
H. Ewald
Keyword(s):  
Energy Loss ◽  
Interaction Potential ◽  
High Energy ◽  
Stopping Power ◽  
Fermi Theory ◽  
Slowing Down ◽  
Important Interaction ◽  
Fcc Lattice ◽  
High Energy Ions ◽  
Screened Coulomb Potential

Abstract A Computer program for following the trajectories of high energy ions in a fcc-lattice has been written to study the energy loss of 60 MeV 127I ions channeled between (100)- and (111)- planes of a Au-single crystal. The motion of the ions is treated classically. It is assumed that the ion has only one important interaction at a time as it moves through the lattice. The interaction potential used in the calculation is a screened Coulomb potential with a screening function derived from Thomas-Fermi-theory. The slowing down of the incident ions through inelastic encounters with the atoms of the medium is described by a stopping power function which increases exponentially with the distance from the midplane of the channel walls.

Scintillation Properties of Ce-Doped LuYAP Crystal for Gamma Ray Detection

2015 ◽  
Vol 804 ◽  
pp. 93-96
Author(s):  
Akapong Phunpueok ◽  
Voranuch Thongpool ◽  
Weerapong Chewpraditkul
Keyword(s):  
Energy Resolution ◽  
Gamma Ray ◽  
Light Yield ◽  
High Energy ◽  
Stopping Power ◽  
Strongly Correlated ◽  
Photon Yield ◽  
Good Energy Resolution ◽  
Intrinsic Resolution ◽  
Good Energy

In the present day, inorganic scintillating crystals become a main part in detection and spectroscopy of nuclear particles and high energy photons, more spectively in X/g-ray imaging. The good properties for the scintillating crystals used in these applications require high photon yield, high stopping power, good energy resolution, good light yield proportionality, and minimal afterglow. The main useful of Ce-doped Lu0.7Y0.3AlO3 (LuYAP(Ce)) are high stopping power and non-hygroscopic which are expected to be key ingredients for medical imaging. In this work, we studied the light yield non-proportionality and energy resolution of LuYAP(Ce) crystal with the energy range from 31 to 1,274.5 keV using photomultiplier tube (PMT) readout. The intrinsic resolution of the LuYAP(Ce) crystal has been determined after correcting the measured PMT resolution. The results showed that the non-proportional response of the crystals was strongly correlated with the intrinsic resolution of the crystals.

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