Electrical Contact and Adhesion Modification Produced by High Energy Heavy Ion Bombardment of Au Films on GaAs

1984 ◽  
Vol 37 ◽  
Author(s):  
R. P. Livi ◽  
S. Paine ◽  
C. R. Wie ◽  
M. H. Mendenhall ◽  
J. Y. Tang ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Electrical Contact ◽  
Ion Bombardment ◽  
Scratch Test ◽  
Heavy Ion ◽  
High Energy ◽  
Stopping Power ◽  
Dose Threshold ◽  
Electronic Stopping Power

AbstractThin gold films over GaAs wafers with different dopants (Cr, Si, Te, and Zn) were used to study the role of he substrate electronic properties in the electrical contact and adhesion modification induced by MeV/nucleon heavy ion bombardment. The enhanced adhesion was studied using a scratch test; the results show very different modifications of adhesion depending on the bulk electronic properties of the substrate. The sample with a Cr compensation doped substrate showed enhancement in adhesion for beam doses as low as 1012 ions/cm2, but Si and Te doped (n–type) substrates showed a sudden enhancement in adhesion for doses around 1014 ions/cm2. Samples with Si and Te doped substrates were used to sudy the bombarding ion dE/dx dependence of the induced adhesion for 19F and 35C1 ions with electronic stopping power ranging from 161 eV/Å to 506 eV/Å. In this range the dose threshold fgfjhe ops! of induced adhesion has a power law dependence, D = D0(dE/dx)− (1.90 ± 1.0)

Three-Dimensional Lithography for Rutile TiO2 Single Crystals using Swift Heavy Ions

2003 ◽  
Vol 797 ◽  
Author(s):  
Koichi Awazu ◽  
Makoto Fujimaki ◽  
Yoshimichi Ohki ◽  
Tetsuro Komatsubara
Keyword(s):  
Single Crystal ◽  
Hydrofluoric Acid ◽  
Ion Irradiation ◽  
Three Dimensional ◽  
Heavy Ion ◽  
High Energy ◽  
Stopping Power ◽  
A Value ◽  
Microscopy Measurement ◽  
Electronic Stopping Power

ABSTRACTWe have developed a nano-micro structure fabrication method in rutile TiO2 single crystal by use of swift heavy-ion irradiation. The area where ions heavier than Cl ion accelerated with MeV-order high energy were irradiated was well etched by hydrofluoric acid, by comparison etching was not observed in the pristine TiO2 single crystal. Noticed that the irradiated area could be etched to a depth at which the electronic stopping power of the ion decayed to a value of 6.2keV/nm. We also found that the value of the electronic stopping power was increased, eventually decreased against depth in TiO2 single crystal with, e.g. 84.5MeV Ca ion. Using such a beam, inside of TiO2 single crystal was selectively etched with 20% hydrofluoric acid, while the top surface of TiO2 single crystal subjected to irradiation was not etched. Roughness of the new surface created in the single crystal was within 7nm with the atomic forth microscopy measurement.

Electrical Characterization Of Defects Introduced During Plasma-Based Processing Of GaAs

1996 ◽  
Vol 442 ◽  
Author(s):  
F. D. Auret ◽  
G. Myburg ◽  
W. E. Meyer ◽  
P. N. K. Deenapanray ◽  
H. Nordhoff ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Electrical Characterization ◽  
Ion Bombardment ◽  
High Energy ◽  
Wet Etching ◽  
Low Energy ◽  
Characteristic Set ◽  
Si Doped ◽  
Metastable Defect

AbstractDLTS revealed that each plasma type (He and SiCl4) introduced its own characteristic set of defects. Some of the defects created during He processing and one defect introduced by SiCl4 etching had identical electronic properties to those introduced during high energy (MeV) He ion bombardment. SiC14etching introduced only two prominent defects, one of which is metastable with electronic properties similar to a metastable defect previously reported in high and low energy He-ion bombardment of Si-doped GaAs. IV measurements demonstrated that the characteristics of SBDs fabricated on He-ion processed surfaces were very poor compared to those of control diodes (diodes fabricated on surfaces cleaned by conventional wet etching). In contrast, the properties of SBDs fabricated on SiCl4 etched surfaces were as good as, and in some cases superior to, those of control diodes. SBDs fabricated on annealed (at 450°C for 30 minutes) He-processed samples exhibited improved but still poor rectification. In contrast, SBDs fabricated on annealed SiCl4 etched surfaces had virtually the same characteristics as those fabricated on unannealed SiCl4 etched samples.

High resistivity bismuth produced by heavy ion irradiations in the electronic stopping power regime

1993 ◽  
Vol 126 (1-4) ◽  
pp. 181-184 ◽  
Author(s):  
E. Paumier ◽  
A. Audouard ◽  
F. Beuneu ◽  
C. Dufour ◽  
J. Dural ◽  
...  
Keyword(s):  
Heavy Ion ◽  
Stopping Power ◽  
High Resistivity ◽  
Electronic Stopping Power

scholarly journals High energy heavy ion bombardment in polycrystalline Fe3O4thin film

2012 ◽  
Vol 388 (13) ◽  
pp. 132014
Author(s):  
Jianrong Sun ◽  
Zhiguang Wang ◽  
Yuyu Wang ◽  
Cunfeng Yao ◽  
Kongfang Wei ◽  
...  
Keyword(s):  
Ion Bombardment ◽  
Heavy Ion ◽  
High Energy

scholarly journals PRODUCTION OF VOIDS IN PURE METALS BY HIGH ENERGY HEAVY ION BOMBARDMENT.

1971 ◽  
Author(s):  
G.L. Kulcinski ◽  
J.L. Brimhall ◽  
H.E. Kissinger
Keyword(s):  
Ion Bombardment ◽  
Heavy Ion ◽  
High Energy ◽  
Pure Metals

scholarly journals Probing the hadronic phase with resonances of different lifetimes in Pb-Pb collisions with ALICE

2018 ◽  
Vol 171 ◽  
pp. 15001
Author(s):  
Neelima Agrawal
Keyword(s):  
Heavy Ion ◽  
High Energy ◽  
Special Focus ◽  
Alice Experiment ◽  
Comprehensive Overview ◽  
Final State ◽  
Hadronic Phase ◽  
Ion Collisions ◽  
Hadronic Resonances

The ALICE experiment has measured the production of a rich set of hadronic resonances, such as ρ(770)0, K*(892)0, ϕ(1020), ∑±(1385), Λ(1520) and Ξ*0 in pp, p-Pb and Pb-Pb collisions at various energies at the LHC. A comprehensive overview and the latest results are presented in this paper. Special focus is given to the role of hadronic resonances for the study of final-state effects in high-energy collisions. In particular, the measurement of resonance production in heavy-ion collisions has the capability to provide insight into the existence of a prolonged hadronic phase after hadronisation. The observation of the suppression of the production of Λ(1520) resonance in central Pb-Pb collisions at [see formula in PDF] =2.76 TeV adds further support to the existence of such a dense hadronic phase, as already evidenced by the ratios K*(892)0/K and ρ(770)0/π.

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