Magnetic and electronic properties of B -site-ordered double-perovskite oxide La2CrMnO6 thin films

2019 ◽  
Vol 99 (23) ◽  
Author(s):  
K. Yoshimatsu ◽  
J. Ishimaru ◽  
K. Watarai ◽  
K. Yamamoto ◽  
Y. Hirata ◽  
...  
2017 ◽  
Vol 110 (9) ◽  
pp. 093102 ◽  
Author(s):  
Zach Harrell ◽  
Erik Enriquez ◽  
Aiping Chen ◽  
Paul Dowden ◽  
Brennan Mace ◽  
...  

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
L. L. Rusevich ◽  
M. Tyunina ◽  
E. A. Kotomin ◽  
N. Nepomniashchaia ◽  
A. Dejneka

AbstractThe electronic properties, including bandgap and conductivity, are critical for nearly all applications of multifunctional perovskite oxide ferroelectrics. Here we analysed possibility to induce semiconductor behaviour in these materials, which are basically insulators, by replacement of several percent of oxygen atoms with nitrogen, hydrogen, or vacancies. We explored this approach for one of the best studied members of the large family of ABO3 perovskite ferroelectrics — strontium titanate (SrTiO3). The atomic and electronic structure of defects were theoretically investigated using the large-scale first-principles calculations for both bulk crystal and thin films. The results of calculations were experimentally verified by studies of the optical properties at photon energies from 25 meV to 8.8 eV for in-situ prepared thin films. It was demonstrated that substitutions and vacancies prefer locations at surfaces or phase boundaries over those inside crystallites. At the same time, local states in the bandgap can be produced by vacancies located both inside the crystals and at the surface, but by nitrogen substitution only inside crystals. Wide-bandgap insulator phases were evidenced for all defects. Compared to pure SrTiO3 films, bandgap widening due to defects was theoretically predicted and experimentally detected.


2018 ◽  
Vol 97 (20) ◽  
Author(s):  
S. Esser ◽  
C. F. Chang ◽  
C.-Y. Kuo ◽  
S. Merten ◽  
V. Roddatis ◽  
...  

Polymers ◽  
2021 ◽  
Vol 13 (7) ◽  
pp. 1023
Author(s):  
María Elena Sánchez-Vergara ◽  
Leon Hamui ◽  
Elizabeth Gómez ◽  
Guillermo M. Chans ◽  
José Miguel Galván-Hidalgo

The synthesis of four mononuclear heptacoordinated organotin (IV) complexes of mixed ligands derived from tridentated Schiff bases and pyrazinecarboxylic acid is reported. This organotin (IV) complexes were prepared by using a multicomponent reaction, the reaction proceeds in moderate to good yields (64% to 82%). The complexes were characterized by UV-vis spectroscopy, IR spectroscopy, mass spectrometry, 1H, 13C, and 119Sn nuclear magnetic resonance (NMR) and elemental analysis. The spectroscopic analysis revealed that the tin atom is seven-coordinate in solution and that the carboxyl group acts as monodentate ligand. To determine the effect of the substituent on the optoelectronic properties of the organotin (IV) complexes, thin films were deposited, and the optical bandgap was obtained. A bandgap between 1.88 and 1.98 eV for the pellets and between 1.23 and 1.40 eV for the thin films was obtained. Later, different types of optoelectronic devices with architecture “contacts up/base down” were manufactured and analyzed to compare their electrical behavior. The design was intended to generate a composite based on the synthetized heptacoordinated organotin (IV) complexes embedded on the poly(3,4-ethylenedyoxithiophene)-poly(styrene sulfonate) (PEDOT:PSS). A Schottky curve at low voltages (<1.5 mV) and a current density variation of as much as ~3 × 10−5 A/cm2 at ~1.1 mV was observed. A generated photocurrent was of approximately 10−7 A and a photoconductivity between 4 × 10−9 and 7 × 10−9 S/cm for all the manufactured structures. The structural modifications on organotin (IV) complexes were focused on the electronic nature of the substituents and their ability to contribute to the electronic delocalization via the π system. The presence of the methyl group, a modest electron donor, or the non-substitution on the aromatic ring, has a reduced effect on the electronic properties of the molecule. However, a strong effect in the electronic properties of the material can be inferred from the presence of electron-withdrawing substituents like chlorine, able to reduce the gap energies.


Materials ◽  
2021 ◽  
Vol 14 (9) ◽  
pp. 2126
Author(s):  
Junyoung Lee ◽  
Woojun Seol ◽  
Gopinathan Anoop ◽  
Shibnath Samanta ◽  
Sanjith Unithrattil ◽  
...  

The low-temperature processability of molecular ferroelectric (FE) crystals makes them a potential alternative for perovskite oxide-based ferroelectric thin films. Quinuclidinium perrhenate (HQReO4) is one such molecular FE crystal that exhibits ferroelectricity when crystallized in an intermediate temperature phase (ITP). However, bulk HQReO4 crystals exhibit ferroelectricity only for a narrow temperature window (22 K), above and below which the polar phase transforms to a non-FE phase. The FE phase or ITP of HQReO4 should be stabilized in a much wider temperature range for practical applications. Here, to stabilize the FE phase (ITP) in a wider temperature range, highly oriented thin films of HQReO4 were prepared using a simple solution process. A slow evaporation method was adapted for drying the HQReO4 thin films to control the morphology and the temperature window. The temperature window of the intermediate temperature FE phase was successfully widened up to 35 K by merely varying the film drying temperature between 333 and 353 K. The strategy of stabilizing the FE phase in a wider temperature range can be adapted to other molecular FE materials to realize flexible electronic devices.


Author(s):  
Noor Zamin Khan ◽  
Sayed Ali Khan ◽  
Muhammad Sohail ◽  
M.A. Majeed Khan ◽  
Jahangeer Ahmed ◽  
...  

2002 ◽  
Vol 420-421 ◽  
pp. 312-317 ◽  
Author(s):  
R Sanjinés ◽  
O Banakh ◽  
C Rojas ◽  
P.E Schmid ◽  
F Lévy

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