Exciton spectroscopy of optical reflection from wide quantum wells

2019 ◽  
Vol 99 (3) ◽  
Author(s):  
E. S. Khramtsov ◽  
P. S. Grigoryev ◽  
D. K. Loginov ◽  
I. V. Ignatiev ◽  
Yu. P. Efimov ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Reflection ◽  
Exciton Spectroscopy

scholarly journals Plasmon-excitonic polaritons in metal-semiconductor nanostructures with quantum wells

2018 ◽  
Vol 52 (5) ◽  
pp. 502
Author(s):  
V.A. Kosobukin
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Semiconductor Nanostructures ◽  
Bragg Diffraction ◽  
Rabi Splitting ◽  
One Dimensional ◽  
Exciton Coupling ◽  
Optical Reflection ◽  
Reflectivity Spectra ◽  
Bragg Structures

AbstractA theory of plasmon-exciton coupling and its spectroscopy is developed for metal-semiconductor nanostructures. Considered as a model is a periodic superlattice with cells consisting of a quantum well and a layer of metal nanoparticles. The problem is solved self-consistently using the electrodynamic Green’s functions taking account of resonant polarization. Coulomb plasmon-exciton interaction is associated with the dipole surface plasmons of particles and their image charges due to excitonic polarization of neighboring quantum well. Optical reflection spectra are numerically investigated for superlattices with GaAs/AlGaAs quantum wells and silver nanoparticles. Superradiant regime caused by one-dimensional Bragg diffraction is studied for plasmonic, excitonic and plasmon-excitonic polaritons depending on the number of supercells. The plasmon-excitonic Rabi splitting is shown to occur in reflectivity spectra of resonant Bragg structures.

Optical reflection from long-period multiple quantum wells: effects of dielectric constant mismatch

1998 ◽  
Vol 184-185 ◽  
pp. 763-767 ◽  
Author(s):  
E.L. Ivchenko ◽  
V.P. Kochereshko ◽  
D.R. Yakovlev ◽  
A.V. Platonov ◽  
A. Waag ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Optical Reflection ◽  
Long Period

Non-Linear Exciton Spectroscopy of GaN/AlGaN Quantum Wells

1998 ◽  
Vol 264-268 ◽  
pp. 1303-1306
Author(s):  
R. Cingolani ◽  
G. Coli ◽  
R. Rinaldi ◽  
L. Calcagnile ◽  
H. Tang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Non Linear ◽  
Exciton Spectroscopy

Optical reflection and contactless electroreflection from GaAlAs layers with periodically arranged GaAs quantum wells

2006 ◽  
Vol 40 (12) ◽  
pp. 1432-1435 ◽  
Author(s):  
V. V. Chaldyshev ◽  
A. S. Shkol’nik ◽  
V. P. Evtikhiev ◽  
T. Holden
Keyword(s):  
Quantum Wells ◽  
Optical Reflection

scholarly journals Inhomogeneous broadening of exciton lines in magneto-optical reflection from CdTe/CdMgTe quantum wells

2001 ◽  
Vol 24 (1) ◽  
pp. 7-13 ◽  
Author(s):  
G.V. Astakhov ◽  
V.A. Kosobukin ◽  
V.P. Kochereshko ◽  
D.R. Yakovlev ◽  
W. Ossau ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Inhomogeneous Broadening ◽  
Optical Reflection

Exciton spectroscopy inZn1−xCdxSe/ZnSe quantum wells

1995 ◽  
Vol 51 (8) ◽  
pp. 5176-5183 ◽  
Author(s):  
R. Cingolani ◽  
P. Prete ◽  
D. Greco ◽  
P. V. Giugno ◽  
M. Lomascolo ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Exciton Spectroscopy

scholarly journals Optical reflection spectra of resonant photonic structures based on a system of 100 InGaN quantum wells

2020 ◽  
Vol 1697 ◽  
pp. 012153
Author(s):  
A A Ivanov ◽  
V V Chaldyshev ◽  
E E Zavarin ◽  
A V Sakharov ◽  
W V Lundin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Reflection Spectra ◽  
Optical Reflection ◽  
Photonic Structures ◽  
Ingan Quantum Wells

Characterization of GaAs/AlGaAs quantum wells and quantum wires by chemical lattice imaging

1994 ◽  
Vol 52 ◽  
pp. 736-737
Author(s):  
A. Carlsson ◽  
J.-O. Malm ◽  
A. Gustafsson
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Vapour Phase ◽  
Quantitative Information ◽  
Lattice Imaging ◽  
Vapour Phase Epitaxy ◽  
Metalorganic Vapour Phase Epitaxy ◽  
High Resolution Images

In this study a quantum well/quantum wire (QW/QWR) structure grown on a grating of V-grooves has been characterized by a technique related to chemical lattice imaging. This technique makes it possible to extract quantitative information from high resolution images.The QW/QWR structure was grown on a GaAs substrate patterned with a grating of V-grooves. The growth rate was approximately three monolayers per second without growth interruption at the interfaces. On this substrate a barrier of nominally Al0.35 Ga0.65 As was deposited to a thickness of approximately 300 nm using metalorganic vapour phase epitaxy . On top of the Al0.35Ga0.65As barrier a 3.5 nm GaAs quantum well was deposited and to conclude the structure an additional approximate 300 nm Al0.35Ga0.65 As was deposited. The GaAs QW deposited in this manner turns out to be significantly thicker at the bottom of the grooves giving a QWR running along the grooves. During the growth of the barriers an approximately 30 nm wide Ga-rich region is formed at the bottom of the grooves giving a Ga-rich stripe extending from the bottom of each groove to the surface.

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