scholarly journals Inhomogeneous broadening of exciton lines in magneto-optical reflection from CdTe/CdMgTe quantum wells

2001 ◽  
Vol 24 (1) ◽  
pp. 7-13 ◽  
Author(s):  
G.V. Astakhov ◽  
V.A. Kosobukin ◽  
V.P. Kochereshko ◽  
D.R. Yakovlev ◽  
W. Ossau ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Inhomogeneous Broadening ◽  
Optical Reflection

Exciton–Light Coupling in Quantum Wells in the Presence of Inhomogeneous Broadening

1997 ◽  
Vol 164 (1) ◽  
pp. 189-192 ◽  
Author(s):  
A. V. Kavokin ◽  
M. R. Vladimirova ◽  
L. C. Andreani ◽  
G. Panzarini ◽  
J. J. Baumberg
Keyword(s):  
Quantum Wells ◽  
Inhomogeneous Broadening ◽  
Light Coupling

Exciton spectroscopy of optical reflection from wide quantum wells

2019 ◽  
Vol 99 (3) ◽  
Author(s):  
E. S. Khramtsov ◽  
P. S. Grigoryev ◽  
D. K. Loginov ◽  
I. V. Ignatiev ◽  
Yu. P. Efimov ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Reflection ◽  
Exciton Spectroscopy

scholarly journals Plasmon-excitonic polaritons in metal-semiconductor nanostructures with quantum wells

2018 ◽  
Vol 52 (5) ◽  
pp. 502
Author(s):  
V.A. Kosobukin
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Semiconductor Nanostructures ◽  
Bragg Diffraction ◽  
Rabi Splitting ◽  
One Dimensional ◽  
Exciton Coupling ◽  
Optical Reflection ◽  
Reflectivity Spectra ◽  
Bragg Structures

AbstractA theory of plasmon-exciton coupling and its spectroscopy is developed for metal-semiconductor nanostructures. Considered as a model is a periodic superlattice with cells consisting of a quantum well and a layer of metal nanoparticles. The problem is solved self-consistently using the electrodynamic Green’s functions taking account of resonant polarization. Coulomb plasmon-exciton interaction is associated with the dipole surface plasmons of particles and their image charges due to excitonic polarization of neighboring quantum well. Optical reflection spectra are numerically investigated for superlattices with GaAs/AlGaAs quantum wells and silver nanoparticles. Superradiant regime caused by one-dimensional Bragg diffraction is studied for plasmonic, excitonic and plasmon-excitonic polaritons depending on the number of supercells. The plasmon-excitonic Rabi splitting is shown to occur in reflectivity spectra of resonant Bragg structures.

Problems of superradiant lasing in magnetized quantum wells: two-color regime, inhomogeneous broadening, and VCSEL scheme

2001 ◽  
Author(s):  
A. A. Belyanin ◽  
V. V. Kocharovsky ◽  
Vl. V. Kocharovsky ◽  
D. S. Pestov
Keyword(s):  
Quantum Wells ◽  
Inhomogeneous Broadening

Four-wave mixing and terahertz emission from three-level systems in quantum wells: Effects of inhomogeneous broadening

1994 ◽  
Vol 50 (16) ◽  
pp. 11915-11923 ◽  
Author(s):  
Xuejun Zhu ◽  
Mark S. Hybertsen ◽  
P. B. Littlewood ◽  
Martin C. Nuss
Keyword(s):  
Quantum Wells ◽  
Four Wave Mixing ◽  
Inhomogeneous Broadening ◽  
Wave Mixing ◽  
Terahertz Emission

Optical reflection from long-period multiple quantum wells: effects of dielectric constant mismatch

1998 ◽  
Vol 184-185 ◽  
pp. 763-767 ◽  
Author(s):  
E.L. Ivchenko ◽  
V.P. Kochereshko ◽  
D.R. Yakovlev ◽  
A.V. Platonov ◽  
A. Waag ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Optical Reflection ◽  
Long Period

Optical Gain Spectra in InGaN/GaN Quantum Wells with the Compositional Fluctuations

1998 ◽  
Vol 537 ◽  
Author(s):  
Takeshi Uenoyama
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Optical Gain ◽  
Inhomogeneous Broadening ◽  
Localized States ◽  
Quantum Well Structures ◽  
Potential Fluctuation ◽  
Quantum Disk ◽  
Gain Spectra

The compositional fluctuations of the In content were found in InGaN/GaN quantum wells and it caused the localized states by the potential fluctuation. We have evaluated the optical gain of GaN based quantum well structures with localized states. The localized states are treated as the subband states of the quantum disk-like dots in the well. It was found that the inhomogeneous broadening played an important role in the optical gain and that it should be reduced to use the benefit of the localized states for laser oscillations.

scholarly journals Effect of Inhomogeneous Broadening in Ultraviolet III-Nitride Light-Emitting Diodes

Materials ◽  
2021 ◽  
Vol 14 (24) ◽  
pp. 7890
Author(s):  
Friedhard Römer ◽  
Martin Guttmann ◽  
Tim Wernicke ◽  
Michael Kneissl ◽  
Bernd Witzigmann
Keyword(s):  
Active Region ◽  
Quantum Wells ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Inhomogeneous Broadening ◽  
Aluminium Content ◽  
Hole Density ◽  
Free Hole ◽  
Light Emitting ◽  
The Impact

In the past years, light-emitting diodes (LED) made of GaN and its related ternary compounds with indium and aluminium have become an enabling technology in all areas of lighting. Visible LEDs have yet matured, but research on deep ultraviolet (UV) LEDs is still in progress. The polarisation in the anisotropic wurtzite lattice and the low free hole density in p-doped III-nitride compounds with high aluminium content make the design for high efficiency a critical step. The growth kinetics of the rather thin active quantum wells in III-nitride LEDs makes them prone to inhomogeneous broadening (IHB). Physical modelling of the active region of III-nitride LEDs supports the optimisation by revealing the opaque active region physics. In this work, we analyse the impact of the IHB on the luminescence and carrier transport III-nitride LEDs with multi-quantum well (MQW) active regions by numerical simulations comparing them to experimental results. The IHB is modelled with a statistical model that enables efficient and deterministic simulations. We analyse how the lumped electronic characteristics including the quantum efficiency and the diode ideality factor are related to the IHB and discuss how they can be used in the optimisation process.

Electron/hole energy shifts in narrow GaAs/AlAs quantum wells: Inhomogeneous broadening due to half‐monolayer well‐width fluctuations

1990 ◽  
Vol 57 (14) ◽  
pp. 1404-1406 ◽  
Author(s):  
W. S. Fu ◽  
G. R. Olbright ◽  
A. Owyoung ◽  
J. F. Klem ◽  
R. M. Biefeld ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Inhomogeneous Broadening ◽  
Electron Hole ◽  
Hole Energy
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