g -factor and well-width fluctuations as a function of carrier density in the two-dimensional hole accumulation layer of transfer-doped diamond

2019 ◽  
Vol 99 (3) ◽  
Author(s):  
Golrokh Akhgar ◽  
Lothar Ley ◽  
Daniel L. Creedon ◽  
Alastair Stacey ◽  
Jeffrey C. McCallum ◽  
...  
Keyword(s):  
Carrier Density ◽  
Two Dimensional ◽  
G Factor ◽  
Accumulation Layer

Investigation of Traps in AlGaN/GaN Heterostructures by Ultrasonic Vibrations

2021 ◽  
Vol 66 (12) ◽  
pp. 1058
Author(s):  
V.V. Kaliuzhnyi ◽  
O.I. Liubchenko ◽  
M.D. Tymochko ◽  
Y.M. Olikh ◽  
V.P. Kladko ◽  
...  
Keyword(s):  
Carrier Density ◽  
Electron Gas ◽  
Two Dimensional ◽  
Ultrasonic Vibrations ◽  
Persistent Photoconductivity ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Dx Centers ◽  
Dimensional Electron Gas

A method of dynamic deformations has been proposed as a useful informative tool in the characterization of transportation properties of a two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures. It is found that the exposing of a sample to ultrasonic vibrations results in the persistent acousto-conductivity (PAC) which was observed up to room temperatures. The PAC behaves itself like persistent photoconductivity (PPC), and the carrier density in the 2DEG channel is primarily contributed by the transfer of electrons excited from traps (like DX centers) as a result of their reconstruction under the ultrasonic loading.

Measurement of a large hole g-factor in two-dimensional hole gases

2010 ◽  
Vol 42 (4) ◽  
pp. 964-966 ◽  
Author(s):  
D.A. Vasyukov ◽  
A.S. Plaut ◽  
M. Henini
Keyword(s):  
Two Dimensional ◽  
Large Hole ◽  
G Factor

scholarly journals Artificial two-dimensional polar metal by charge transfer to a ferroelectric insulator

2019 ◽  
Vol 2 (1) ◽  
Author(s):  
W. X. Zhou ◽  
H. J. Wu ◽  
J. Zhou ◽  
S. W. Zeng ◽  
C. J. Li ◽  
...  
Keyword(s):  
Carrier Density ◽  
Room Temperature ◽  
Electronic Devices ◽  
General Concept ◽  
Polar Phase ◽  
Strongly Correlated ◽  
Two Dimensional ◽  
Single System ◽  
Oxide Interfaces ◽  
Mobile Carrier

Abstract Integrating multiple properties in a single system is crucial for the continuous developments in electronic devices. However, some physical properties are mutually exclusive in nature. Here, we report the coexistence of two seemingly mutually exclusive properties-polarity and two-dimensional conductivity-in ferroelectric Ba0.2Sr0.8TiO3 thin films at the LaAlO3/Ba0.2Sr0.8TiO3 interface at room temperature. The polarity of a ∼3.2 nm Ba0.2Sr0.8TiO3 thin film is preserved with a two-dimensional mobile carrier density of ∼0.05 electron per unit cell. We show that the electronic reconstruction resulting from the competition between the built-in electric field of LaAlO3 and the polarization of Ba0.2Sr0.8TiO3 is responsible for this unusual two-dimensional conducting polar phase. The general concept of exploiting mutually exclusive properties at oxide interfaces via electronic reconstruction may be applicable to other strongly-correlated oxide interfaces, thus opening windows to new functional nanoscale materials for applications in novel nanoelectronics.

New insight into SPR modulating by two-dimensional correlation spectroscopy: the case for an Ag/ITO system

Nanoscale ◽  
2020 ◽  
Vol 12 (48) ◽  
pp. 24357-24361
Author(s):  
Bingbing Han ◽  
Sila Jin ◽  
Qi Chu ◽  
Yang Jin ◽  
Xiangxin Xue ◽  
...  
Keyword(s):  
Surface Plasmon Resonance ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Localized Surface Plasmon Resonance ◽  
Carrier Density ◽  
Correlation Spectroscopy ◽  
Localized Surface Plasmon ◽  
Two Dimensional ◽  
System P ◽  
Insight Into

The localized surface plasmon resonance (LSPR) of Ag/indium tin oxide (ITO)@polystyrene (PS) in the visible-NIR region was dependent on the tuning of the carrier density caused by adjusting the thickness of the ITO layer.

Sheet Density and Well Thickness Effects on Photoluminescence from Pseudomorphic HEMT Structures

1988 ◽  
Vol 144 ◽  
Author(s):  
C. Colvard ◽  
N. Nouri ◽  
H. Lee ◽  
D. Ackley
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Fermi Level ◽  
Excellent Agreement ◽  
Fermi Energy ◽  
Carrier Density ◽  
Two Dimensional ◽  
Fermi Edge ◽  
Low Temperature Photoluminescence ◽  
Sheet Density

ABSTRACTLow temperature photoluminescence was studied in a large number of pseudomorphic HEMT's having an InxGa1−xAs quantum well. The spectra show strong qualitative differences when the Fermi level is above or below the second conduction subband, and in the latter case they are power dependent. A slight enhancement is seen at the Fermi edge only when it lies close to the higher subband. Excellent agreement is found between the measured Fermi energy and the two-dimensional carrier density in the well.

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