scholarly journals Electron paramagnetic resonance signature of point defects in neutron-irradiated hexagonal boron nitride

2018 ◽  
Vol 98 (15) ◽  
Author(s):  
J. R. Toledo ◽  
D. B. de Jesus ◽  
M. Kianinia ◽  
A. S. Leal ◽  
C. Fantini ◽  
...  
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Boron Nitride ◽  
Point Defects ◽  
Hexagonal Boron Nitride ◽  
Paramagnetic Resonance ◽  
Electron Paramagnetic

Interaction of Point Defects with Impurities in the Si-SiO2 System and its Influence on the Properties of the Interface

2009 ◽  
Vol 156-158 ◽  
pp. 145-148 ◽  
Author(s):  
Daniel Kropman ◽  
E. Mellikov ◽  
K. Lott ◽  
Tiit Kärner ◽  
Ivo Heinmaa ◽  
...  
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Magnetic Resonance ◽  
Fermi Level ◽  
Point Defects ◽  
Interface Properties ◽  
Hydrogen Ions ◽  
Paramagnetic Resonance ◽  
Proposed Model ◽  
P Type ◽  
Electron Paramagnetic

The results of investigation of the point defect generation and interaction with impurities in the Si-SiO2 system during the process of its formation by means of electron paramagnetic resonance (EPR) and nucleous magnetic resonance (NMR) technique are presented. It has been shown that the diference in point defects interaction with hydrogen at the Si-SO2 interface with n- and p-type conductivity are connected with the sign of hydrogen ions incorporation dependence on the Fermi level position in accordance with the proposed model. The interface properties may be improved by laser irradiation.

Point Defects in SiC

2008 ◽  
Vol 1069 ◽  
Author(s):  
Ádám Gali ◽  
Michel Bockstedte ◽  
Ngyen Tien Son ◽  
Erik Janzén
Keyword(s):  
Silicon Carbide ◽  
Electron Paramagnetic Resonance ◽  
Ab Initio ◽  
Point Defects ◽  
Semiconductor Technology ◽  
Tight Control ◽  
Accurate Calculation ◽  
Paramagnetic Resonance ◽  
Absorption And Emission ◽  
Electron Paramagnetic

ABSTRACTTight control of defects is pivotal for semiconductor technology. However, even the basic defects are not entirely understood in silicon carbide. In the recent years significant advances have been reached in identification of defects by combining the experimental tools like electron paramagnetic resonance and photoluminescence with ab initio calculations. We summarize these results and their consequences in silicon carbide based technology. We show recent methodological developments making possible the accurate calculation of absorption and emission signals of defects.

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