Disorder-induced decoupled surface transport channels in thin films of doped topological insulators

2018 ◽  
Vol 98 (4) ◽  
Author(s):  
Hanbum Park ◽  
Jimin Chae ◽  
Kwangsik Jeong ◽  
Hyejin Choi ◽  
Jaehun Jeong ◽  
...  
Keyword(s):  
Thin Films ◽  
Topological Insulators ◽  
Surface Transport ◽  
Transport Channels

scholarly journals Emergence of Decoupled Surface Transport Channels in Bulk InsulatingBi2Se3Thin Films

2014 ◽  
Vol 113 (2) ◽  
Author(s):  
Matthew Brahlek ◽  
Nikesh Koirala ◽  
Maryam Salehi ◽  
Namrata Bansal ◽  
Seongshik Oh
Keyword(s):  
Surface Transport ◽  
Transport Channels

scholarly journals Tuning topology in thin films of topological insulators by strain gradients

2019 ◽  
Vol 100 (11) ◽  
Author(s):  
Raffaele Battilomo ◽  
Niccoló Scopigno ◽  
Carmine Ortix
Keyword(s):  
Thin Films ◽  
Topological Insulators ◽  
Strain Gradients

Patterned 2D Thin Films Topological Insulators for Potential Plasmonic Applications

2019 ◽  
pp. 361-391
Author(s):  
G. Padmalaya ◽  
E. Manikandan ◽  
S. Radha ◽  
B.S. Sreeja ◽  
P. Senthil Kumar
Keyword(s):  
Thin Films ◽  
Topological Insulators

Low-Frequency Noise in “Graphene-Like” Exfoliated Thin Films of Topological Insulators

2011 ◽  
Vol 1344 ◽  
Author(s):  
M. Z. Hossain ◽  
S. L. Rumyantsev ◽  
K. M. F. Shahil ◽  
D. Teweldebrhan ◽  
M. Shur ◽  
...  
Keyword(s):  
Thin Films ◽  
Topological Insulators ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Bulk Crystals ◽  
Noise Spectral Density ◽  
Noise Data ◽  
Device Applications ◽  
Surface Conduction

ABSTRACTWe report results of the study of the low-frequency noise in thin films of bismuth selenide topological insulators, which were mechanically exfoliated from bulk crystals via “graphene-like” procedures. From the resistance dependence on the film thickness, it was established that the surface conduction contributions to electron transport were dominant. It was found that the current fluctuations have the noise spectral density SI ∞ 1/f (where f is the frequency) for the frequency range up to 10 kHz. The obtained noise data are important for transport experiments with topological insulators and for any proposed device applications of these materials.

scholarly journals Topological surface transport in epitaxial SnTe thin films grown on Bi2Te3

2014 ◽  
Vol 89 (12) ◽  
Author(s):  
A. A. Taskin ◽  
Fan Yang ◽  
Satoshi Sasaki ◽  
Kouji Segawa ◽  
Yoichi Ando
Keyword(s):  
Thin Films ◽  
Surface Transport ◽  
Topological Surface
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