scholarly journals Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy

2018 ◽  
Vol 98 (4) ◽  
Author(s):  
W. Hahn ◽  
J.-M. Lentali ◽  
P. Polovodov ◽  
N. Young ◽  
S. Nakamura ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Anderson Localization ◽  
Luminescence Spectroscopy ◽  
Scanning Tunneling ◽  
Compositional Disorder ◽  
Tunneling Luminescence

Terahertz-Field-Driven Scanning Tunneling Luminescence Spectroscopy

ACS Photonics ◽  
2021 ◽  
Author(s):  
Kensuke Kimura ◽  
Yuta Morinaga ◽  
Hiroshi Imada ◽  
Ikufumi Katayama ◽  
Kanta Asakawa ◽  
...  
Keyword(s):  
Luminescence Spectroscopy ◽  
Scanning Tunneling ◽  
Tunneling Luminescence

Recent Advances in the STM-based Luminescence Microscopy of Cu(In,Ga)Se2 thin films

2009 ◽  
Vol 1165 ◽  
Author(s):  
Manuel J. Romero ◽  
Miguel A. Contreras ◽  
Ingrid Repins ◽  
Chun-Sheng Jiang ◽  
Mowafak Al-Jassim
Keyword(s):  
Thin Films ◽  
Luminescence Spectrum ◽  
Electronic Properties ◽  
High Efficiency ◽  
Luminescence Spectroscopy ◽  
Scanning Tunneling ◽  
Luminescence Microscopy ◽  
Recent Advances ◽  
Spectrum Imaging ◽  
Tunneling Luminescence

AbstractWe report on recent advances in the development of a luminescence spectroscopy based on scanning tunneling microscopy (STM) and its application to fundamental aspects of Cu(In,Ga)Se2 (CIGS) thin films. Relevant to our discussion is the specifics of the surface electronics. The CIGS shows pronounced stoichiometric deviations at the surface and, consequently, distinct surface electronics that has been shown to be critical in achieving high efficiency. Cathodoluminescence (CL), a luminescence spectrum imaging mode in scanning electron microscopy (SEM), provides a direct correlation between the microstructure of the CIGS and its electronic properties. As such, cathodoluminescence can resolve the emission spectrum between grain boundaries and grain interiors or be used to investigate the influence of local orientation and stoichiometry on the electronic properties of the CIGS at the microscale. Cathodoluminescence is not a surface microscopy, however, and resolving the electronic structure of the CIGS surface remains elusive to all luminescence microscopies. With this motivation, we have developed a luminescence microscopy based on STM, in which tunneling electrons are responsible for the excitation of luminescence (scanning tunneling luminescence or STL). The hot-tunneling-electron excitation is confined to the surface and, consequently, the tunneling luminescence spectrum reveals the electronic states near the surface. The STM is integrated inside the SEM and, therefore, both CL and STL can be measured over the same location and compared. Using this setup, the transition from the grain interior to the surface can be investigated. We have improved the collection of our optics to a level in which tunneling luminescence spectrum imaging can be performed. Here we present a detailed account on our investigation of the surface electronics in CIGS deposited in the regime of selenium deficiency as defined by <Se>/(<Cu> + <In> + < Ga >) = 1.

scholarly journals Real-Space Investigation of Intermolecular Energy Transfer by Scanning Tunneling Luminescence Spectroscopy

Hyomen Kagaku ◽  
2017 ◽  
Vol 38 (9) ◽  
pp. 455-459
Author(s):  
Hiroshi IMADA ◽  
Kuniyuki MIWA ◽  
Miyabi IMAI-IMADA ◽  
Shota KAWAHARA ◽  
Kensuke KIMURA ◽  
...  
Keyword(s):  
Energy Transfer ◽  
Real Space ◽  
Luminescence Spectroscopy ◽  
Scanning Tunneling ◽  
Intermolecular Energy ◽  
Intermolecular Energy Transfer ◽  
Tunneling Luminescence

Scanning Tunneling Luminescence of Individual CdSe Nanowires

Small ◽  
2011 ◽  
Vol 7 (16) ◽  
pp. 2396-2400 ◽  
Author(s):  
Theresa Lutz ◽  
Alexander Kabakchiev ◽  
Thomas Dufaux ◽  
Christian Wolpert ◽  
Zhe Wang ◽  
...  
Keyword(s):  
Scanning Tunneling ◽  
Cdse Nanowires ◽  
Tunneling Luminescence

Scanning tunneling spectroscopy of lead sulfide quantum wells fabricated by atomic layer deposition

2010 ◽  
Vol 21 (48) ◽  
pp. 485402 ◽  
Author(s):  
Wonyoung Lee ◽  
Neil P Dasgupta ◽  
Hee Joon Jung ◽  
Jung-Rok Lee ◽  
Robert Sinclair ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Quantum Wells ◽  
Lead Sulfide ◽  
Atomic Layer ◽  
Scanning Tunneling Spectroscopy ◽  
Tunneling Spectroscopy ◽  
Scanning Tunneling ◽  
Layer Deposition

Optical Characterization of Individual Nanostructures by STM Light Emission

1999 ◽  
Vol 588 ◽  
Author(s):  
S. Ushioda
Keyword(s):  
Quantum Wells ◽  
Scanning Tunneling Microscope ◽  
Light Emission ◽  
Electronic Transitions ◽  
Scanning Tunneling ◽  
Surface Geometry ◽  
Future Expectations ◽  
Semiconductor Quantum Wells ◽  
Stm Light Emission

AbstractVisible light is emitted when electrons (holes) are injected into a sample from the tip of the scanning tunneling microscope (STM). By analyzing the spectra of the emitted light, one can not only determine the surface geometry by usual STM imaging, but also learn the electronic and optical properties of specific individual nanostructures. This technique has been applied to investigate the electronic transitions of individual protrusions of porous Si and semiconductor quantum wells of AlGaAs/GaAs. The usefulness, limitations, and future expectations of this novel technique are discussed.

Scanning Tunneling Microscope-Induced Luminescence Studies of Defects in GaN Layers and Heterostructures

1999 ◽  
Vol 588 ◽  
Author(s):  
S. Evoy ◽  
C. K. Harnett ◽  
S. Keller ◽  
U. K. Mishra ◽  
S. P. DenBaars ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Scanning Tunneling Microscope ◽  
Multiple Quantum Well ◽  
Scanning Tunneling ◽  
Nanometer Scale ◽  
Multiple Quantum ◽  
Proof Of Concept ◽  
Cross Sectional ◽  
Tunneling Microscope ◽  
Nm Range

AbstractWe present the scanning tunneling microscope-induced luminescence (STL) imaging of defects in optoelectronic materials. Resolution is first discussed using cross-sectional images of InGaAs/GaAs quantum dots. Proof of concept is then provided through the nanometer-scale imaging of GaN layers and quantum wells. The expected λ=356±25 nm range dominates the low temperature STL of GaN. Mapping of luminescence shows circular non-emitting areas around threading dislocations. Extent of dark areas suggests a hole diffusion length of Ld=30–55 nm, in agreement with reported values. The expected λ=450±35 nm range dominates the STL from a buried InGaN/GaN multiple quantum well. Imaging reveals 30–100 nm wide smooth fluctuations of luminescence.

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