scholarly journals Tuning the electronic properties of gated multilayer phosphorene: A self-consistent tight-binding study

2018 ◽  
Vol 97 (15) ◽  
Author(s):  
L. L. Li ◽  
B. Partoens ◽  
F. M. Peeters
2005 ◽  
Vol 72 (3) ◽  
Author(s):  
Serkan Erdin ◽  
You Lin ◽  
J. Woods Halley

2003 ◽  
Vol 68 (23) ◽  
Author(s):  
R. Santoprete ◽  
Belita Koiller ◽  
R. B. Capaz ◽  
P. Kratzer ◽  
Q. K. K. Liu ◽  
...  

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 469-473
Author(s):  
Andrea Reale ◽  
Aldo Di Carlo ◽  
Sara Pescetelli ◽  
Marco Paciotti ◽  
Paolo Lugli

A tight-binding models which account for band mixing, strain and external applied potentials in a self-consistent fashion has been developed. This allows us to describe electronic and optical properties of nanostructured devices beyond the usual envelope function approximation. This model can be applied to direct and indirect gap semiconductors thus allowing for instance the self-consistent calculation of band profile and carrier control in pseudomorphic InGaAs/GaAs HEMTs and SiGe/Si MODFETs.


2004 ◽  
Vol 13 (10) ◽  
pp. 1826-1833 ◽  
Author(s):  
D.A. Areshkin ◽  
O.A. Shenderova ◽  
S.P. Adiga ◽  
D.W. Brenner

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